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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PMBTA64,215

Name: PMBTA64,215
Brand: Nexperia USA Inc.
SKU: PMBTA64,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMBTA64,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PMBTA64,215.pdf

Description:: TRANS PNP DARL 30V 0.5A TO-236AB

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Product details

Overview

PMBTA64,215 from NXP Semiconductors is a PNP Darlington transistor in SOT23 package, designed for high-input-impedance preamplifier stages with DC current gain ≥10,000 at −10 mA, V_CE = −5 V; collector-emitter saturation voltage ≤−1.5 V at −100 mA/−0.1 mA drive; and maximum collector current of −500 mA. It operates in ambient temperatures from −65 °C to +150 °C.

For engineers reviewing the PMBTA64,215 datasheet, PMBTA64,215 pinout, PMBTA64,215 application, or PMBTA64,215 equivalent, key selection factors include guaranteed h_FE ≥10,000, low V_CE(sat) under high-current switching, SOT23 footprint compatibility, and thermal resistance of 500 K/W on FR4 PCB.

Technical Context

The PMBTA64,215 integrates two cascaded PNP transistors in a monolithic Darlington configuration, delivering ultra-high DC current gain without external bias networks. Its architecture enables direct interface with high-impedance sources such as photodiodes or sensor outputs while maintaining stable operation up to 150 °C junction temperature.

It exhibits f_T = 125 MHz at −50 mA/−5 V, supporting moderate-frequency amplification and switching. The device uses standard silicon planar epitaxial process, with base-emitter cutoff current ≤−100 nA and collector-base cutoff current ≤−100 nA - critical for low-leakage biasing in precision analog front-ends.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−30 V: Maximum safe collector-emitter voltage before breakdown; defines usable supply headroom in PNP-switching topologies.
h_FE (min)	10,000 at −10 mA/−5 V: Enables microampere-level base drive for 10 mA load current - reduces control circuit power and simplifies driver design.
V_CE(sat)	≤−1.5 V at −100 mA/−0.1 mA: Minimizes conduction loss in linear regulator pass elements or high-side switch applications.
P_tot	250 mW at T_amb ≤25 °C: Sets practical continuous power limit on standard FR4 PCB; derates linearly above 25 °C ambient.
R_th(j-a)	500 K/W: Thermal resistance determines junction temperature rise - e.g., 125 mW dissipation yields ΔT = 62.5 K above ambient.
f_T	125 MHz at −50 mA/−5 V: Supports audio-band amplification and fast digital switching up to ~10–20 MHz with adequate gain margin.

Pinout & Package

SOT23 plastic surface-mounted package (TO-236AB), 3-lead, dimensions per JEDEC MO-203AA: body size 2.9 × 1.3 × 1.0 mm, lead pitch 0.95 mm, tape-and-reel compatible (EIA-481-D compliant).

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input node; requires current-limited drive due to Darlington's high h_FE; sensitive to ESD (IEC 61000-4-2 Level 2).
2	Emitter	Common reference terminal for PNP operation; connects to higher-potential rail (e.g., V_CC) in high-side switch configurations.
3	Collector	Output current sink node; handles up to −500 mA DC; must be routed with adequate copper area for thermal management.

Key Features

Feature	Design Value
Ultra-high DC current gain	h_FE ≥10,000 ensures <10 µA base current drives 100 mA load - eliminates need for multi-stage base drivers.
Low saturation voltage	V_CE(sat) ≤−1.5 V at −100 mA enables efficient high-side switching with <150 mW conduction loss.
High-voltage PNP structure	V_CBO = −30 V supports operation in 24 V industrial control rails and automotive battery-sensed circuits.
Thermal robustness	Rated T_j = 150 °C and T_stg = −65 to +150 °C allow use in under-hood or enclosed industrial enclosures.

Applications

High-Input-Impedance Preamplifier

Industrial Sensor Interface

Use Scenario: Amplifying weak current signals from photodiodes or piezoelectric sensors where input loading must be minimized.

IC Role / Device Role / Timing Role: PNP Darlington configured as common-emitter amplifier with emitter degeneration resistor for DC stability.

Use Value: Input impedance >10 MΩ achieved via high h_FE, reducing signal attenuation and preserving SNR in sub-µA signal paths.

Use Scenario: Converting 4–20 mA loop sensor output into a buffered voltage signal for ADC input in PLC modules.

IC Role / Device Role / Timing Role: High-gain current-to-voltage converter stage with active load compensation.

Use Value: Stable h_FE across temperature ensures ±0.1% linearity over −40 to +85 °C operating range.

High-Side Load Switch

Linear Voltage Regulator Pass Element

Use Scenario: Controlling 12 V solenoid or relay coil in automotive body control modules using low-power MCU GPIO.

IC Role / Device Role / Timing Role: PNP Darlington used in emitter-follower configuration to source current to load.

Use Value: Base drive current ≤100 µA allows direct interface with 3.3 V logic without level-shifting or buffer ICs.

Use Scenario: Adjustable 5 V/100 mA linear regulator in test equipment requiring low-noise, low-ripple output.

IC Role / Device Role / Timing Role: Pass transistor in series-regulator topology with feedback to error amplifier.

Use Value: Low V_CE(sat) minimizes dropout voltage (<1.8 V at full load), improving efficiency and thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BCV61,215	Same SOT23 package, but h_FE min = 2000 (not Darlington); V_CEO = −30 V; lower gain requires larger base drive.	Not suitable for µA-level drive scenarios; acceptable only where base current >500 µA is available.	Select only if cost sensitivity outweighs gain requirement and board space permits added base resistor network.
ZTX951	TO-92 package, h_FE min = 1000, V_CEO = −60 V; higher voltage rating but incompatible footprint and thermal performance.	Requires through-hole layout change and heatsinking for >200 mA loads; not drop-in replaceable.	Choose only for legacy through-hole designs needing higher breakdown voltage; not recommended for new SMT designs.

Compared with BCV61,215 and ZTX951, the PMBTA64,215 uniquely delivers Darlington-level gain in SOT23, enabling ultra-low-drive switching and high-impedance amplification without footprint or thermal compromises - making it irreplaceable in space-constrained, low-power analog interfaces.

Availability

PMBTA64,215 is available at Aetrix Electronics and suitable for industrial sensor interfaces, automotive body electronics, and portable medical instrumentation requiring stable component supply, consistent parametric performance, and long-term manufacturability.

Supply support for PMBTA64,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The PMBTA64,215 belongs to NXP's discrete bipolar transistor portfolio, engineered specifically for high-gain, low-power analog signal conditioning and high-side switching in compact, thermally constrained environments.

FAQ

Is PMBTA64,215 RoHS-compliant and halogen-free?

Yes. PMBTA64,215 meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. The SOT23 package uses lead-free matte tin plating, and material declarations confirm absence of brominated flame retardants and PVC.

Can PMBTA64,215 replace PMBTA63 in existing designs?

No. PMBTA63 is an NPN Darlington with opposite polarity, different pinout (base-emitter-collector vs. base-emitter-collector reversed), and complementary function. Swapping would invert logic and cause circuit failure; use PMBTA14 as the true NPN complement.

What is the maximum safe continuous collector current at 85 °C ambient?

At T_amb = 85 °C, derating applies: P_tot drops to 125 mW (50% of 250 mW). With V_CE(sat) ≈ −1.2 V at −100 mA, max continuous I_C remains −100 mA to maintain junction temperature ≤150 °C - verified by R_th(j-a) = 500 K/W.

Does PMBTA64,215 support pulsed operation beyond its DC ratings?

Yes. Peak collector current I_CM = −800 mA is specified for short pulses (t_p ≤ 10 ms, duty cycle ≤ 10%). This enables brief surge handling in relay driving or motor commutation snubbing, provided average power stays within 250 mW limits.

PMBTA64,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

Transistor Type:: PNP - Darlington

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 1.5V @ 100µA, 100mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 20000 @ 100mA, 5V

Power - Max:: 250 mW

Frequency - Transition:: 125MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PMBTA64,215 FAQ

1.How can I place an order for PMBTA64,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMBTA64,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMBTA64,215 reliable?

The price and inventory of PMBTA64,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMBTA64,215 is usually 5 days.

3.What payment methods are accepted for PMBTA64,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMBTA64,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMBTA64,215?

PMBTA64,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMBTA64,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMBTA64,215?

For technical support, including PMBTA64,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMBTA64,215 requirements.

6.How does Aetrix verify that PMBTA64,215 is sourced from the original manufacturer or authorized distributors?

All PMBTA64,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMBTA64,215 meets industry standards.

7.What is the process for return or replacement of PMBTA64,215?

All PMBTA64,215 units undergo pre-shipment inspection (PSI). If there is an issue with PMBTA64,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMBTA64,215 part is unused and in its original packaging.

Return procedure for PMBTA64,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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