NXP Semiconductors PMEM4010PD,115
- Part No.:
- PMEM4010PD,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Bipolar Transistors
- Package:
- SC-74, SOT-457
- Datasheet:
-
PMEM4010PD,115.pdf
- Description:
- TRANS PNP 40V 1A SC-74
- Quantity:
- Payment:

- Shipping:

Inventory:7,011
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Product details
Overview
PMEM4010PD from NXP Semiconductors is a monolithic PNP transistor/Schottky diode module in a single SOT457 (SC-74) surface-mount package. It integrates a high-current PNP transistor with VCEsat ≤ 310 mV at −1 A and a guard-ring-protected Schottky diode with VF ≤ 550 mV at 1 A, enabling compact DC/DC converter and inductive load driver designs.
For engineers reviewing the PMEM4010PD datasheet, PMEM4010PD pinout, PMEM4010PD application, or PMEM4010PD equivalent, key selection criteria include its dual-function integration, low saturation voltage, ultra-fast diode switching, thermal resistance of 208 K/W, and compatibility with reverse polarity protection and freewheeling circuits requiring <1 cm² PCB area.
Technical Context
The PMEM4010PD combines two electrically independent semiconductor elements - a planar PNP bipolar transistor and a planar Schottky barrier diode - on a single die within a thermally optimized SOT457 package. The transistor features hFE = 160–800 (IC = −1 mA to −1 A), while the diode delivers IF = 1 A continuous with IR ≤ 50 µA at VR = 15 V and Cd = 19–25 pF at VR = 5 V.
Its integrated guard ring protects the Schottky junction against edge breakdown under transient stress, and the shared collector pad (Pin 6) and cathode (Pin 3) enable efficient thermal coupling to PCB copper. Pin 2 is internally unconnected - confirmed by datasheet pinning table and outline diagram.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEsat max | 310 mV at −1 A / −100 mA base drive: enables low-loss switching in high-current load drivers |
| VF max | 550 mV at 1 A forward current: minimizes conduction loss in freewheeling paths |
| Ptot | 600 mW at Tamb ≤ 25 °C: defines maximum usable power before thermal derating |
| Rth j-a | 208 K/W: requires ≥1 cm² copper pad for safe operation at full current |
| fT | 150 MHz: supports stable operation in DC/DC converters up to ~10 MHz switching frequency |
| IR max | 50 µA at VR = 15 V: ensures low leakage in reverse-polarity protection circuits |
| Cd | 25 pF at VR = 5 V: limits high-frequency noise coupling in fast-switching applications |
Pinout & Package
Package: SOT457 (SC-74), 6-lead plastic surface-mount package with exposed collector pad for thermal dissipation. Dimensions per IEC/JEDEC: 3.1 × 2.7 × 1.1 mm, 1 cm² recommended copper mounting area for collector (Pin 6).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter | Transistor emitter terminal; connects to load return path in high-side switch configurations |
| 2 | Not connected | No internal bond wire or die connection; must remain floating or grounded per layout best practice |
| 3 | Cathode | Schottky diode cathode; tied to collector (Pin 6) internally in freewheeling configuration |
| 4 | Anode | Schottky diode anode; connects to inductive load or supply rail for reverse polarity protection |
| 5 | Base | Transistor base control input; requires current-limited drive due to hFE-dependent saturation behavior |
| 6 | Collector | Transistor collector and primary thermal path; must be soldered to ≥1 cm² copper for rated power handling |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic integration | Single-die co-location of PNP transistor + Schottky diode eliminates interconnect inductance and saves >40% PCB area vs discrete solutions |
| Guard-ring protected diode | Integrated edge termination prevents premature avalanche at diode periphery under voltage transients |
| Low VCEsat architecture | Optimized emitter-base geometry achieves <310 mV saturation at 1 A, reducing I²R losses in battery-powered loads |
| Ultra-low forward voltage | VF ≤ 550 mV at 1 A enables >95% efficiency in low-voltage (<5 V) freewheeling paths |
| Thermally enhanced package | SOT457 exposes collector metal for direct PCB thermal conduction, supporting 600 mW dissipation with minimal heatsinking |
Applications
| DC/DC Converters | Inductive Load Drivers |
|---|---|
Use Scenario: Step-down (buck) converter output stage operating at 1–2 MHz with 3.3 V or 5 V input. IC Role / Device Role / Timing Role: PNP transistor acts as synchronous rectifier switch; Schottky diode provides freewheeling path during low-side conduction phase. Use Value: Combined VCEsat + VF < 860 mV at 1 A reduces conduction loss by 35% vs discrete MOSFET+diode solution. | Use Scenario: Driving 12 V automotive relays or brushed DC motors with flyback energy recovery. IC Role / Device Role / Timing Role: Transistor switches load to ground; integrated Schottky clamps inductive kickback across coil terminals. Use Value: Eliminates need for external flyback diode, reducing BOM count and board space while ensuring sub-100 ns turn-off response. |
| Reverse Polarity Protection | General Purpose Load Drivers |
Use Scenario: Input protection for portable electronics powered by barrel-jack or USB-C adapters prone to plug reversal. IC Role / Device Role / Timing Role: Schottky diode placed anode-to-input, cathode-to-VCC; PNP transistor unused or configured as pass element. Use Value: VF ≤ 550 mV at 1 A limits voltage drop to <0.6 V, preserving >90% of supply headroom at full load. | Use Scenario: Low-cost industrial I/O modules driving solenoids, buzzers, or LED arrays from microcontroller GPIOs. IC Role / Device Role / Timing Role: Transistor functions as high-side load switch; diode remains idle unless back-EMF occurs. Use Value: Single-component solution supports 1 A continuous load with <1.1 V VBEsat, simplifying base-drive design and reducing component count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP transistor + Schottky diode module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PMEM4010ND | NPN complement; same package, identical diode, but NPN transistor with VCEsat ≤ 250 mV at 1 A and hFE = 100–600 | Requires inverted control logic and low-side switching topology; not interchangeable without circuit redesign | Select PMEM4010ND only when NPN-based topology is mandated by system-level grounding or controller interface constraints |
| MBT3906DW1T1G | Discrete dual PNP transistor (no integrated diode); SOT-363 package; VCEsat = 400 mV at 100 mA; no Schottky function | Requires external Schottky diode (e.g., MBRM120ESD) for freewheeling, increasing footprint and parasitic inductance | Choose only if diode functionality is unnecessary or provided elsewhere in the system; not suitable for integrated freewheeling or reverse polarity use cases |
Compared with PMEM4010ND and MBT3906DW1T1G, the PMEM4010PD uniquely delivers monolithic integration of high-current PNP switching and ultra-low-VF Schottky clamping in one thermally optimized package - eliminating layout complexity and interconnect losses inherent in discrete or complementary alternatives.
Availability
PMEM4010PD is available at Aetrix Electronics and suitable for DC/DC convertors, inductive load drivers, and reverse polarity protection circuits requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for PMEM4010PD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The PMEM4010PD belongs to NXP's legacy discrete power module family, designed specifically to reduce PCB area and assembly cost in space-constrained, high-reliability power interface circuits.
FAQ
What is the maximum continuous collector current rating for the PMEM4010PD?
The PMEM4010PD has a maximum continuous collector current (IC) rating of −1 A, as specified in the Absolute Maximum Ratings table under "collector current (DC)". This rating assumes operation within ambient temperature limits (−65 °C to +125 °C) and proper PCB thermal management - specifically, a 1 cm² tin-plated copper pad for the collector (Pin 6) to maintain junction temperature below 150 °C.
Is Pin 2 of the PMEM4010PD electrically connected internally?
No, Pin 2 of the PMEM4010PD is explicitly designated as "not connected" in the official NXP datasheet pinning table and schematic symbol. It has no internal bond wire or die connection and must remain unconnected in the PCB layout - neither tied to ground nor used for signal routing - to avoid unintended parasitic coupling or mechanical stress on the leadframe.
Can the PMEM4010PD be used as a standalone Schottky diode without using the transistor?
Yes, the PMEM4010PD can be used solely as a Schottky diode by connecting Pin 4 (anode) and Pin 3 (cathode) into the circuit while leaving Pins 1, 5, and 6 unconnected or appropriately biased. The diode section operates independently with VR = 20 V, IF = 1 A, and VF ≤ 550 mV at 1 A - verified in the Characteristics section. Pin 2 must remain floating.
What is the thermal resistance from junction to ambient (Rth j-a) for the PMEM4010PD?
The thermal resistance from junction to ambient (Rth j-a) for the PMEM4010PD is 208 K/W, measured under standard test conditions: device mounted on a single-sided, tin-plated PCB with a 1 cm² copper pad for the collector (Pin 6). This value applies only in free-air convection and decreases significantly with added copper area or forced airflow.
Does the PMEM4010PD include any built-in protection features beyond the guard ring?
Yes, the Schottky diode portion of the PMEM4010PD includes an integrated guard ring for edge termination and stress protection, as explicitly stated in the Features and Description sections. No additional protection features - such as overvoltage clamping, thermal shutdown, or ESD structures - are documented for the PMEM4010PD. System-level protection must be implemented externally per application requirements.
PMEM4010PD,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP + Diode (Isolated)
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 310mV @ 100mA, 1A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 300 @ 100mA, 5V
- Power - Max:
- 600 mW
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-74
PMEM4010PD,115 FAQ
1.How can I place an order for PMEM4010PD,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMEM4010PD,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMEM4010PD,115 reliable?
The price and inventory of PMEM4010PD,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMEM4010PD,115 is usually 5 days.
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PMEM4010PD,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMEM4010PD,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMEM4010PD,115?
For technical support, including PMEM4010PD,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMEM4010PD,115 requirements.
6.How does Aetrix verify that PMEM4010PD,115 is sourced from the original manufacturer or authorized distributors?
All PMEM4010PD,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMEM4010PD,115 meets industry standards.
7.What is the process for return or replacement of PMEM4010PD,115?
All PMEM4010PD,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMEM4010PD,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMEM4010PD,115 part is unused and in its original packaging.
Return procedure for PMEM4010PD,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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