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NXP Semiconductors PMEM4020ND,115
- Part No.:
- PMEM4020ND,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Bipolar Transistors
- Package:
- SC-74, SOT-457
- Datasheet:
-
PMEM4020ND,115.pdf
- Description:
- TRANS NPN 40V 0.95A SC-74
- Quantity:
- Payment:
- Shipping:
Inventory:9,763
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Product details
Overview
PMEM4020ND from NXP Semiconductors is an integrated NPN transistor and Schottky diode module in a single SOT457 (SC-74) surface-mount package. It delivers 1 A continuous forward current, 40 V collector-emitter voltage, 190 mV VCEsat at 1 A, 480–550 mV forward voltage at 1 A, and operates up to 150 °C junction temperature - optimized for DC-to-DC converters and MOSFET drivers.
For engineers reviewing the PMEM4020ND datasheet, PMEM4020ND pinout, PMEM4020ND application, or PMEM4020ND equivalent, key selection criteria include its dual-function integration, low-loss switching performance, thermal resistance of 208 K/W (combined device), and validated use in inductive load drivers with integrated stress protection.
Technical Context
The PMEM4020ND integrates a planar NPN transistor with low VCEsat and high DC current gain (hFE = 200–900 at IC = 0.5–1 A) alongside a guard-ring-protected Schottky diode offering ultra-high-speed switching and very low forward voltage (480–550 mV at 1 A). Both devices share thermal and mechanical coupling within the same SOT457 package.
Its electrical isolation between transistor and diode terminals enables independent biasing: the transistor uses pins 1 (emitter), 5 (base), 6 (collector); the diode uses pins 3 (cathode), 4 (anode); pin 2 is not connected. The combined Ptot is rated at 600 mW at Tamb = 25 °C under note 2 mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - supports switching in 24 V and 36 V industrial DC-DC stages without derating. |
| IF | 1 A continuous - enables direct drive of medium-power solenoids, relays, and gate drivers without external buffering. |
| VCEsat | 190 mV at IC = 1 A - reduces conduction loss to <0.2 W, critical for thermally constrained SMD layouts. |
| VF | 480–550 mV at IF = 1 A - minimizes forward power dissipation in freewheeling paths, improving converter efficiency. |
| Rth j-a (combined) | 208 K/W - defines maximum allowable ambient temperature rise for safe 600 mW operation on standard FR4 PCBs. |
| fT | 150 MHz - ensures stable high-frequency switching control in PWM-based power stages up to several hundred kHz. |
| Tj max | 150 °C - allows operation in sealed enclosures or high-ambient environments like automotive engine bays. |
Pinout & Package
Package: SOT457 (SC-74), 6-lead plastic surface-mount package with standard footprint per NXP outline drawing; dimensions: 3.1 mm × 2.7 mm × 1.1 mm; marking code B6.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter | Transistor emitter terminal; connects to ground or low-side return path in switch configurations. |
| 2 | Not connected | No internal connection; must remain unconnected on PCB to avoid parasitic coupling or shorting. |
| 3 | Cathode | Schottky diode cathode; ties to positive rail or inductor node in freewheeling applications. |
| 4 | Anode | Schottky diode anode; connects to transistor collector or inductive load return path. |
| 5 | Base | Transistor base control input; requires current-limited drive (IB = 100 mA typical for 1 A IC). |
| 6 | Collector | Transistor collector output; shares thermal pad with cathode (pin 3) for enhanced heat dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated NPN + Schottky topology | Reduces component count by two devices and eliminates interconnect trace inductance between switch and flyback diode. |
| Guard-ring protected Schottky diode | Prevents premature breakdown under transient voltage stress in inductive switching, extending reliability in motor and relay drivers. |
| Low VCEsat (75–400 mV) | Enables high-efficiency linear or saturated switching across 100 mA–2 A loads without active cooling. |
| Ultra-low VF (240–550 mV) | Minimizes reverse recovery losses and improves light-load efficiency in buck and flyback topologies. |
| SOT457 thermal design | Collector and cathode terminals share solderable thermal pads, enabling 1 cm² copper area per terminal to achieve 1000 mW total dissipation capability. |
Applications
| DC-to-DC Converters | Inductive Load Drivers |
|---|---|
Use Scenario: Step-down (buck) converter in industrial power supplies delivering 5–12 V from 24 V input. IC Role / Device Role / Timing Role: NPN transistor acts as main power switch; Schottky diode serves as synchronous rectifier/freewheeling path. Use Value: Combined low VCEsat and VF reduce conduction losses by >30% vs discrete solutions, improving full-load efficiency to >88%. | Use Scenario: Driving 24 V DC solenoids and relays in PLC I/O modules with fast turn-off and back-EMF suppression. IC Role / Device Role / Timing Role: Transistor switches inductive load; integrated Schottky provides clamped freewheeling path during turn-off. Use Value: Eliminates need for external flyback diode and reduces PCB area by 40%, while guard ring prevents failure from voltage spikes >20 V. |
| MOSFET Gate Drivers | Low-Voltage Motor Control |
Use Scenario: Level-shifting and current-boosting stage driving high-side N-channel MOSFET gates in half-bridge inverters. IC Role / Device Role / Timing Role: NPN transistor provides fast pull-down; Schottky diode enables rapid gate discharge via low-VF path. Use Value: Achieves <100 ns turn-off delay and supports gate charge currents up to 1 A, enabling >100 kHz switching. | Use Scenario: Bidirectional brushed DC motor control in battery-powered tools using H-bridge with integrated freewheeling. IC Role / Device Role / Timing Role: Two PMEM4020ND units per half-bridge leg provide switching and body-diode replacement with lower VF. Use Value: Reduces forward drop by 220 mV vs standard silicon diodes, lowering heat generation and extending battery runtime by ~7% at 1 A load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN transistor + Schottky diode module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PMEM4020PD | PNP complement with identical package, ratings, and diode specs; VECO = 40 V, VF = 480–550 mV, but polarity reversed. | Used in high-side switching or complementary push-pull stages where sourcing current is required. | Select PMEM4020PD only when circuit topology demands PNP configuration; not interchangeable with PMEM4020ND without schematic revision. |
| MBT3904DW1T1G | Dual NPN transistor only (no integrated diode); SOT-363 package; VCEO = 40 V, IC = 200 mA; lacks Schottky diode and high-current capability. | Applicable only in low-current logic-level switching; cannot replace PMEM4020ND in power switching roles. | Choose MBT3904DW1T1G only for signal-level amplification or low-power switching where diode integration is unnecessary. |
Compared with PMEM4020PD and MBT3904DW1T1G, the PMEM4020ND uniquely combines high-current NPN switching (1.3 A) with an integrated, guard-ring-protected Schottky diode in one thermally optimized SOT457 package - making it irreplaceable in space-constrained, medium-power DC-DC and inductive driver designs requiring both functions.
Availability
PMEM4020ND is available at Aetrix Electronics and suitable for DC-to-DC converters, inductive load drivers, MOSFET gate drivers, and low-voltage motor control systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance.
Supply support for PMEM4020ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The PMEM4020ND belongs to NXP's legacy discrete power module family, designed specifically to reduce PCB area and assembly cost in medium-power switching applications by integrating complementary power devices in standardized SMD packages.
FAQ
What is the maximum continuous collector current rating for the PMEM4020ND?
The PMEM4020ND supports a maximum continuous collector current of 0.95 A under standard FR4 PCB mounting (note 1), 1.30 A with 1 cm² copper pads on collector and cathode (note 2), and up to 1.65 A on ceramic PCB (note 3). At Ts ≤ 55 °C, it handles 2.0 A DC - all values confirmed in the Absolute Maximum Ratings table of the official NXP datasheet.
Does the PMEM4020ND include reverse-voltage protection for the Schottky diode?
Yes, the Schottky diode in the PMEM4020ND features an integrated guard ring that provides stress protection against transient overvoltage and localized electric field concentration. This structure enables reliable operation at up to 20 V continuous reverse voltage (VR) and improves robustness in inductive switching applications where voltage spikes occur.
Can the PMEM4020ND be used as a direct replacement for discrete NPN transistors and Schottky diodes?
The PMEM4020ND is not a drop-in replacement for arbitrary discrete combinations due to its fixed pinout (pins 1–6) and shared thermal path between collector and cathode. However, in new designs targeting DC-DC converters or inductive drivers, it replaces one NPN transistor and one Schottky diode while reducing layout area and eliminating interconnect inductance - verified in NXP application figure 10 and 11.
What is the thermal resistance from junction to ambient for the PMEM4020ND in combined operation?
The thermal resistance from junction to ambient (Rth j-a) for the PMEM4020ND in combined device operation is 208 K/W under standard mounting conditions (ceramic PCB, single-sided copper, tinplated, per note 3). This value is measured with both transistor and diode active and is distinct from individual device Rth j-a ratings listed elsewhere in the datasheet.
Is there a PNP version of the PMEM4020ND available from NXP?
Yes, the PNP complement is the PMEM4020PD, which shares identical package (SOT457), Schottky diode specifications (VF, VR, IF), and thermal characteristics, but with reversed polarity: emitter and collector swapped, and VECO = 40 V instead of VCEO. It is explicitly listed in the Ordering Information and Applications sections of the PMEM4020ND datasheet as the complementary part.
PMEM4020ND,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN + Diode (Isolated)
- Current - Collector (Ic) (Max):
- 950 mA
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 300 @ 500mA, 5V
- Power - Max:
- 600 mW
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-74
PMEM4020ND,115 FAQ
1.How can I place an order for PMEM4020ND,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMEM4020ND,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMEM4020ND,115 reliable?
The price and inventory of PMEM4020ND,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMEM4020ND,115 is usually 5 days.
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PMEM4020ND,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMEM4020ND,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMEM4020ND,115?
For technical support, including PMEM4020ND,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMEM4020ND,115 requirements.
6.How does Aetrix verify that PMEM4020ND,115 is sourced from the original manufacturer or authorized distributors?
All PMEM4020ND,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMEM4020ND,115 meets industry standards.
7.What is the process for return or replacement of PMEM4020ND,115?
All PMEM4020ND,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMEM4020ND,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMEM4020ND,115 part is unused and in its original packaging.
Return procedure for PMEM4020ND,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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