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NXP Semiconductors PMEM4030NS,115

Part No.:
PMEM4030NS,115
Manufacturer:
NXP Semiconductors
Category:
Single Bipolar Transistors
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixPMEM4030NS,115.pdf
Description:
TRANS NPN 50V 2A 8-SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,404

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Product details

Overview

PMEM4030NS from NXP Semiconductors (formerly Philips) is a monolithic dual-function discrete module integrating an NPN transistor with 2 A DC collector current and low 280 mV VCEsat at 2 A, plus a 40 V, 1 A Schottky barrier rectifier with guard ring protection - all in a single SOT96-1 (SO8) surface-mount package. It serves as a compact power switch and freewheeling diode pair in DC-to-DC converters and inductive load drivers.

For engineers reviewing the PMEM4030NS datasheet, PMEM4030NS pinout, PMEM4030NS application, or PMEM4030NS equivalent, this device offers verified co-packaged transistor-diode integration for space-constrained switching circuits requiring low conduction loss, high-speed recovery, and thermal robustness up to 150 °C junction temperature.

Technical Context

The PMEM4030NS combines two independently functional silicon die - an NPN bipolar transistor and a planar Schottky rectifier - in a single leadframe-based SOT96-1 package. The transistor features a minimum hFE of 200 at 1 A and exhibits RCEsat as low as 100 mΩ at 2 A/200 mA drive, while the Schottky diode delivers VF ≤ 500 mV at 1 A and IR ≤ 300 µA at 40 V reverse bias.

No shared electrical node exists between the transistor and diode sections; pins 3 (NC), 4–6 (anode/cathodes), and 1–2–7–8 (base/emitter/collectors) are electrically isolated per functional block. Thermal resistance from junction to ambient is 125 K/W with optimized 1 cm² collector pad, enabling sustained 1 W total dissipation under defined PCB conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 50 V - Maximum safe collector-emitter voltage before breakdown; supports 24 V and 36 V bus applications with margin.
IC (DC) 2 A - Continuous collector current rating; enables direct driving of medium-power solenoids, relays, and buck converter switches.
VR (Diode) 40 V - Maximum reverse blocking voltage; suitable for 24 V system freewheeling and synchronous rectification in non-isolated DC-DC stages.
IF (Diode) 1 A - Continuous forward current; matches transistor output capability for balanced current-handling in integrated switch/diode topologies.
VCEsat 280 mV @ 2 A/100 mA - Low saturation voltage minimizes I²R losses and self-heating during high-current switching.
VF 460–500 mV @ 1 A - Low forward voltage reduces conduction loss in freewheeling paths, improving efficiency over standard PN diodes.
Tj max 150 °C (transistor), 125 °C (diode) - Dual thermal limits reflect independent die construction; requires layout-aware thermal management.

Pinout & Package

SOT96-1 (SO8/MS-012) plastic small-outline package: 8-lead, 3.9 mm body width, standard footprint compatible with automated SMT assembly. Mounting pad for collectors (pins 7 & 8) recommended at 1 cm² for full 1 W power dissipation.

Pin/Terminal Circuit Role Design Meaning
1 Base Transistor control input; requires ≥100 mA base drive for full 2 A saturation.
2 Emiter Transistor emitter reference; common connection point for base drive return and load ground.
3 Not connected Internally unconnected; must remain floating - no external tie or pull-up/down.
4 Anode Schottky diode anode; connects to inductive load side or switch node in flyback/freewheeling configurations.
5 Cathode Schottky diode cathode; ties to supply rail or ground depending on circuit topology (e.g., cathode to VIN in buck freewheeling).
6 Cathode Second cathode terminal - electrically parallel to pin 5; used for lower-inductance routing or current sharing.
7 Collector Transistor collector output; high-current path tied to load; shares thermal pad with pin 8.
8 Collector Second collector terminal - electrically parallel to pin 7; provides redundant current path and enhanced thermal conduction.

Key Features

Feature Design Value
Integrated NPN + Schottky Eliminates inter-component trace inductance and saves >30% PCB area versus discrete transistor + diode solutions.
Guard ring protected diode Enhances ruggedness against voltage transients and ESD stress in automotive and industrial load-switching environments.
Low VCEsat / VF Reduces combined conduction loss to <1.0 W at 2 A, enabling higher efficiency and smaller heatsinking in space-limited designs.
High-speed switching Diode reverse recovery time not specified but implied by Schottky architecture - enables operation at >100 kHz in DC-DC converters.
Thermal derating support Specified Rth(j-a) = 125 K/W with 1 cm² copper pad allows predictable thermal design for continuous 1 W operation.

Applications

DC-to-DC Converters Inductive Load Drivers

Use Scenario: Non-isolated buck converter stage in point-of-load regulation for FPGA or microcontroller power rails.

IC Role / Device Role / Timing Role: PMEM4030NS acts as the main switching transistor (high-side) with its integrated Schottky diode serving as the synchronous freewheeling path.

Use Value: Co-packaged integration eliminates parasitic inductance between switch and diode, reducing voltage spikes and EMI during 100–500 kHz switching.

Use Scenario: Driving 24 V DC solenoids or relay coils in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: PMEM4030NS functions as the load switch, with its Schottky diode providing fast, low-loss energy recirculation when the coil is de-energized.

Use Value: Guard ring protection ensures reliability against inductive kickback transients exceeding 100 V, extending field lifetime in industrial environments.

General-Purpose Load Drivers Automotive Body Control Modules

Use Scenario: Low-cost LED driver or fan controller in consumer appliances where board space and BOM count are constrained.

IC Role / Device Role / Timing Role: PMEM4030NS operates as a PWM-controlled power switch with integrated flyback path, eliminating need for external diode placement and routing.

Use Value: Reduces pick-and-place cost by one component and simplifies stencil design - validated for reflow-compatible SMT assembly.

Use Scenario: Window lift or seat motor control in 12 V automotive body electronics with transient immunity requirements.

IC Role / Device Role / Timing Role: PMEM4030NS serves as the H-bridge half-bridge switch with its Schottky diode clamping back-EMF during direction reversal.

Use Value: Junction temperature rating up to 150 °C (transistor) meets under-hood thermal requirements without forced cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN transistor + Schottky diode module applications.

Alternative Part Technical Difference Application Difference Selection Advice
PMEM4030PS PNP complement with identical package, VCEO = 50 V, IC = 2 A, but opposite polarity; diode VR = 40 V, IF = 1 A. Used in high-side switching or complementary push-pull configurations where PNP sourcing is required. Select PMEM4030PS only when circuit topology demands PNP switching - not a drop-in replacement for PMEM4030NS.
STB12NM60N + STPS1H100 Discrete N-channel MOSFET (12 A, 600 V) + separate 100 V, 1 A Schottky; no integration, larger footprint, higher gate drive complexity. Suitable for higher-voltage (>40 V) or higher-current (>2 A) applications where PMEM4030NS lacks rating headroom. Choose only if voltage/current specs exceed PMEM4030NS limits; adds layout complexity and increases BOM count by two.

Compared with PMEM4030NS, PMEM4030PS offers complementary polarity but identical thermal and electrical envelope, while STB12NM60N+STPS1H100 provides higher voltage/current capability at the cost of integration, size, and drive simplicity.

Availability

PMEM4030NS is available at Aetrix Electronics and suitable for DC-to-DC converters, inductive load drivers, and general-purpose load switching applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for PMEM4030NS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, headquartered in Eindhoven, Netherlands, develops high-performance analog and mixed-signal semiconductors for automotive, industrial, and consumer markets.

The PMEM4030NS belongs to NXP's legacy Philips discrete power module family, designed specifically to reduce PCB area and assembly cost in medium-current switching applications where transistor-diode co-location improves efficiency and reliability.

FAQ

What is the maximum continuous collector current rating for the PMEM4030NS transistor section?

The PMEM4030NS transistor section is rated for 2 A continuous collector current (IC) under standard FR4 PCB mounting conditions with Tamb ≤ 25 °C. At elevated ambient temperatures or reduced copper area, derating applies - e.g., ~1.3 A at 70 °C ambient with standard footprint.

Can the PMEM4030NS be used in place of a standalone NPN transistor and Schottky diode?

Yes, the PMEM4030NS replaces discrete NPN transistors like BC817-40 and Schottky diodes like BAT54 in compact switching applications. Its integrated structure eliminates inter-component trace inductance and reduces PCB area, but pin compatibility must be verified - it uses SOT96-1, not SOT-23 or SOIC packages.

What is the purpose of pins 5 and 6 both being labeled as cathode in the PMEM4030NS?

Pins 5 and 6 are electrically parallel cathode terminals of the integrated Schottky diode. This dual-cathode configuration lowers effective series inductance and improves current sharing during high di/dt events, supporting robust freewheeling in inductive load applications without requiring external paralleling.

Does the PMEM4030NS include any built-in protection features beyond the guard ring?

Yes - the Schottky diode incorporates a guard ring for transient voltage and ESD protection, and the transistor section features absolute maximum ratings including VEBO = 5 V and Tj = 150 °C. However, PMEM4030NS does not include integrated thermal shutdown, current limiting, or avalanche ruggedness beyond datasheet-specified limits.

Is the PMEM4030NS RoHS compliant and halogen-free?

Yes, PMEM4030NS complies with RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The device carries the "Green" marking per NXP's material declaration, and its SOT96-1 package uses lead-free matte tin terminations compatible with standard Pb-free reflow profiles.

PMEM4030NS,115 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN + Diode (Isolated)
Current - Collector (Ic) (Max):
2 A
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
370mV @ 300mA, 3A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 1A, 2V
Power - Max:
1 W
Frequency - Transition:
100MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

PMEM4030NS,115 FAQ

1.How can I place an order for PMEM4030NS,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMEM4030NS,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMEM4030NS,115 reliable?

The price and inventory of PMEM4030NS,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMEM4030NS,115 is usually 5 days.

3.What payment methods are accepted for PMEM4030NS,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMEM4030NS,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMEM4030NS,115?

PMEM4030NS,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMEM4030NS,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMEM4030NS,115?

For technical support, including PMEM4030NS,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMEM4030NS,115 requirements.

6.How does Aetrix verify that PMEM4030NS,115 is sourced from the original manufacturer or authorized distributors?

All PMEM4030NS,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMEM4030NS,115 meets industry standards.

7.What is the process for return or replacement of PMEM4030NS,115?

All PMEM4030NS,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMEM4030NS,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMEM4030NS,115 part is unused and in its original packaging.

Return procedure for PMEM4030NS,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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