onsemi PN100A_D75Z

Overview

PN100A_D75Z from Fairchild Semiconductor is an NPN general-purpose amplifier transistor rated for 75 V collector-base voltage (VCBO), 45 V collector-emitter voltage (VCEO), and 500 mA continuous collector current (IC). It delivers DC current gain (hFE) of 100–300 at IC = 100 mA, VCE = 1.0 V, and exhibits 250 MHz current gain bandwidth product (fT). It is used in low-to-medium power linear amplification and switching circuits in consumer and industrial signal conditioning stages.

For engineers reviewing the PN100A_D75Z datasheet, pinout, applications, or equivalent options, key selection criteria include VCBO = 75 V, hFE range across operating currents, TO-92 package thermal resistance (RθJA = 200 °C/W), saturation voltage (VCE(sat) ≤ 0.4 V at IC = 200 mA), and noise figure (NF = 4.0 dB at IC = 100 μA).

Technical Context

This device operates as a silicon NPN bipolar junction transistor optimized for general-purpose linear amplification and switching up to 300 mA collector current. Its design targets stable hFE over temperature (−40°C to +125°C) and low noise performance (NF = 4.0 dB) at low bias conditions, with guaranteed breakdown voltages supporting 45 V VCEO and 75 V VCBO operation.

The PN100A_D75Z uses Fairchild's Process 10 fabrication and is characterized for pulsed operation (≤300 μs, ≤2% duty cycle). Thermal performance is specified for FR-4 PCB mounting (1.6″ × 1.6″ × 0.06″), with RθJA = 200 °C/W and maximum junction temperature of +150°C.

Key Specifications

Pinout & Package

PN100A_D75Z is supplied in the TO-92 plastic package, a through-hole, three-terminal configuration with standard lead spacing and JEDEC-compliant mechanical dimensions. The package provides adequate thermal dissipation for up to 625 mW at 25°C ambient, with derating of 5.0 mW/°C above that temperature.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with MMBT100A and PN2222A, PN100A_D75Z offers superior thermal performance in TO-92 (RθJA = 200 °C/W vs. 357 °C/W), higher VCEO headroom than PN2222A, and identical gain-bandwidth and noise characteristics-making it optimal for new through-hole designs requiring reliability and margin.

Availability

PN100A_D75Z is available at Aetrix Electronics and suitable for audio preamplification, DC motor switching, and LED constant-current regulation requiring stable component supply and long-term manufacturability.

Supply support for PN100A_D75Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The PN100A_D75Z belongs to Fairchild's general-purpose NPN transistor family designed for cost-sensitive, medium-current linear and switching applications across consumer, industrial, and automotive-qualified systems.

FAQ

What is the maximum collector-emitter voltage rating for PN100A_D75Z?

The PN100A_D75Z has a maximum collector-emitter voltage (VCEO) rating of 45 V under open-base conditions at 25°C. This rating is defined per Absolute Maximum Ratings and must be derated at elevated temperatures. Operation beyond this limit risks irreversible junction breakdown. The PN100A_D75Z is not rated for avalanche or repetitive breakdown conditions.

Does PN100A_D75Z support surface-mount assembly?

No, PN100A_D75Z is packaged exclusively in the TO-92 through-hole format and is not compatible with SMT reflow processes. For surface-mount equivalents, consider the MMBT100A (SOT-23), which shares identical electrical specifications including VCBO = 75 V, hFE = 100–300, and fT = 250 MHz-but with higher thermal resistance (RθJA = 357 °C/W).

What is the typical noise figure of PN100A_D75Z and under what conditions is it measured?

The PN100A_D75Z has a typical noise figure (NF) of 4.0 dB, measured at IC = 100 μA, VCE = 5.0 V, source resistance RG = 2.0 kΩ, and frequency f = 1.0 kHz. This value reflects low-noise performance suitable for preamplifier stages. NF increases significantly at higher collector currents or frequencies outside this test condition, as confirmed in the datasheet's Typical Characteristics section.

Can PN100A_D75Z be used in switching applications, and what are its key timing parameters?

Yes, PN100A_D75Z is qualified for switching use, with typical turn-off time (t_f) <300 ns at IC = 100 mA and VCC = 10 V. Rise time (t_r) and storage time (t_s) are also characterized in Figure 7 of the datasheet. Its low VCE(sat) ≤ 0.4 V at IC = 200 mA reduces conduction loss, making PN100A_D75Z suitable for PWM-driven loads up to ~1 MHz in non-critical timing applications.

What is the thermal resistance from junction to ambient for PN100A_D75Z, and how does it affect power dissipation?

PN100A_D75Z has a junction-to-ambient thermal resistance (RθJA) of 200 °C/W when mounted on a standard FR-4 PCB (1.6″ × 1.6″ × 0.06″). At 25°C ambient, this allows 625 mW total dissipation; above that temperature, dissipation must be linearly derated by 5.0 mW/°C. Exceeding thermal limits causes hFE degradation and accelerated failure-designers must verify board copper area and airflow in final layout.