onsemi PN100_D75Z

Overview

PN100_D75Z from Fairchild Semiconductor is an NPN general-purpose amplifier transistor rated for 75 V collector-base voltage, 45 V collector-emitter voltage, and 500 mA continuous collector current, with DC current gain (hFE) of 100–450 at IC = 100 mA and VCE = 1.0 V, used in low-to-medium power linear amplification and switching circuits in consumer audio preamps and sensor signal conditioning stages.

For engineers reviewing the PN100_D75Z datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-92 package compatibility, 250 MHz fT bandwidth, 0.4 V VCE(sat) at 200 mA, 4.5 pF CobO capacitance, and thermal resistance of 200 °C/W (RθJA on FR-4).

Technical Context

This device operates as a silicon NPN bipolar junction transistor optimized for general-purpose linear amplification and medium-speed switching up to ~250 MHz. It supports continuous collector currents up to 500 mA and withstands 75 V reverse bias across collector-base junctions, with guaranteed breakdown voltages specified under pulsed test conditions (≤300 μs, ≤2% duty cycle).

Thermal performance is defined for mounting on a standard 1.6" × 1.6" × 0.06" FR-4 PCB, delivering 625 mW total dissipation at 25°C ambient with 5.0 mW/°C derating above that temperature. Its noise figure is 5.0 dB at IC = 100 μA, making it suitable for low-noise small-signal amplification where gain stability and moderate bandwidth are prioritized over ultra-low noise.

Key Specifications

Pinout & Package

PN100_D75Z is supplied in the through-hole TO-92 package (JEDEC TO-92 variant), with standardized lead configuration: Emitter (Pin 1), Base (Pin 2), Collector (Pin 3). The device marking "PN100" appears on the package body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with MMBT2222A and BC547B, PN100_D75Z offers superior voltage blocking (75 V CBO) and current handling (500 mA), making it uniquely suited for 48 V interface circuits and medium-power discrete amplifiers where TO-92 mechanical fit and thermal mass are advantageous.

Availability

PN100_D75Z is available at Aetrix Electronics and suitable for audio pre-amplifier stages, sensor signal conditioning circuits, DC motor speed control modules, and legacy linear power supply regulation requiring stable component supply and long-term obsolescence management.

Supply support for PN100_D75Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016; its legacy products remain widely deployed in industrial and consumer systems.

PN100_D75Z belongs to Fairchild's general-purpose bipolar transistor family designed for cost-sensitive, medium-performance linear amplification and switching applications where reliability, wide gain range, and proven TO-92 manufacturability are critical.

FAQ

What is the maximum collector-emitter voltage rating for PN100_D75Z?

The maximum collector-emitter voltage (V_CEO) for PN100_D75Z is 45 V, tested under pulsed conditions (pulse width ≤300 μs, duty cycle ≤2%). This rating defines the absolute upper limit for DC or peak voltage applied between collector and emitter in safe operation. Exceeding this value risks avalanche breakdown and permanent device failure. Designers must ensure margin-typically ≥20%-in actual circuits, especially under transient or inductive load conditions.

Is PN100_D75Z available in surface-mount packaging?

No, PN100_D75Z is specifically the TO-92 through-hole variant. While the broader PN100 family includes SOT-23 versions (e.g., MMBT100), the PN100_D75Z designation corresponds exclusively to the TO-92 package with pin 1 = emitter, pin 2 = base, pin 3 = collector. Surface-mount alternatives such as MMBT2222A or BC847B require PCB redesign and are not direct replacements.

What is the typical noise figure of PN100_D75Z and under what conditions is it measured?

The typical noise figure of PN100_D75Z is 5.0 dB, measured at IC = 100 μA, VCE = 5.0 V, RG = 2.0 kΩ, and f = 1.0 kHz. This value reflects low-frequency noise performance relevant to audio and sensor front-end applications. It is not specified at RF frequencies; for VHF/UHF use, designers should rely on f_T and capacitance parameters rather than noise figure.

Can PN100_D75Z be used in switching applications, and what are its key timing characteristics?

Yes, PN100_D75Z supports switching applications with typical turn-off time (t_f) of <100 ns at IC = 100 mA and IB1 = IB2 = IC/10. Its 250 MHz f_T and low V_CE(sat) (0.4 V at 200 mA) enable efficient operation up to ~20 kHz PWM. However, it is not optimized for high-frequency switching (>100 kHz); MOSFETs or RF-optimized BJTs are preferred for SMPS or Class-D audio.

How does the thermal resistance of PN100_D75Z affect its power dissipation capability?

PN100_D75Z has R_θJA = 200 °C/W on a standard 1.6" × 1.6" FR-4 PCB. At 25°C ambient, it dissipates 625 mW; above that, derating is 5.0 mW/°C. For example, at 75°C ambient, max dissipation drops to 375 mW. This directly limits usable collector current in linear applications-e.g., at V_CE = 5 V, max sustainable I_C ≈ 75 mA-to avoid exceeding 150°C junction temperature.