NXP Semiconductors PN2222A,412

Overview

PN2222A,412 from STMicroelectronics is a silicon epitaxial planar NPN small-signal transistor in TO-92 package, rated for V_CEO = 40 V, I_C = 600 mA, P_tot = 500 mW, and h_FE ≥ 100 at I_C = 150 mA. It serves as a high-gain, low-V_CE(sat) load switch in TV and home appliance equipment.

For engineers reviewing the PN2222A,412 datasheet, PN2222A,412 pinout, PN2222A,412 application, or PN2222A,412 equivalent, key selection criteria include saturation voltage under 150 mA/15 mA drive, DC current gain stability across 0.1–500 mA, thermal resistance (R_thj-amb = 250 °C/W), and complementary pairing with PN2907A.

Technical Context

This NPN transistor operates in linear and switching modes with verified pulsed performance: t_s = 185–225 ns storage time and t_f = 24–60 ns fall time at I_C = 150 mA, V_CC = 30 V. Its f_T = 270 MHz supports RF preamp and broadband amplification up to mid-VHF.

Electrical behavior is characterized across temperature and bias: V_(BR)CEO ≥ 40 V at I_C = 10 mA; V_CE(sat) ≤ 0.3 V (typ.) and ≤ 1 V (max.) at I_C = 150 mA/I_B = 15 mA; noise figure = 4 dB at I_C = 0.1 mA, f = 1 kHz.

Key Specifications

Pinout & Package

PN2222A,412 is supplied in TO-92 through-hole package (JEDEC TO-92 variant), with lead spacing P0 = 12.5–12.9 mm and body height H = 18.5–20.5 mm. Pin identification follows standard TO-92 orientation: flat side facing viewer, leads down, left-to-right = Emitter–Base–Collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Compared with MMBT2222A and PN2222, PN2222A,412 delivers superior thermal performance (250 vs. 300 °C/W), higher power handling (500 vs. 310 mW), and guaranteed high-frequency response-making it preferred for through-hole designs demanding reliability and spec margin.

Availability

PN2222A,412 is available at Aetrix Electronics and suitable for TV horizontal deflection drivers, home appliance motor controls, and industrial sensor interfaces requiring stable component supply and long-term obsolescence management.

Supply support for PN2222A,412 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

PN2222A,412 belongs to ST's legacy bipolar transistor product line, engineered for robustness, consistency, and compatibility in cost-sensitive, high-volume analog and switching applications.

FAQ

What is the maximum continuous collector current for PN2222A,412?

The PN2222A,412 is rated for a maximum continuous collector current (I_C) of 600 mA at T_amb = 25 °C. Derating applies above 25 °C per R_thj-amb = 250 °C/W; at 75 °C ambient, usable I_C drops to approximately 200 mA to maintain junction temperature ≤ 150 °C. This rating assumes proper PCB copper area for heat sinking.

Does PN2222A,412 have a documented complementary PNP transistor?

Yes, the PN2907A is explicitly listed in the PN2222A,412 datasheet as its complementary PNP counterpart. Both share matching voltage ratings (V_CEO = −40 V for PN2907A), gain ranges, and TO-92 packaging-enabling direct use in push-pull amplifiers, differential pairs, and H-bridge driver stages without redesign.

What is the typical transition frequency (f_T) of PN2222A,412 and under what conditions is it measured?

The typical transition frequency (f_T) of PN2222A,412 is 270 MHz, measured at I_C = 20 mA, V_CE = 20 V, and f = 100 MHz. This value reflects the frequency at which small-signal current gain (h_fe) drops to unity and confirms suitability for VHF amplification and oscillator circuits up to ~100 MHz.

Is PN2222A,412 suitable for low-noise audio preamplifier applications?

Yes, PN2222A,412 is suitable for low-noise audio preamplifier stages: its noise figure is specified at 4 dB (I_C = 0.1 mA, V_CE = 10 V, f = 1 kHz, ∆f = 200 Hz, R_G = 1 kΩ). Combined with h_fe = 50–300 and stable h_ie, it supports high-SNR, low-distortion amplification in microphone and line-level inputs.

What is the absolute maximum emitter-base reverse voltage for PN2222A,412?

The absolute maximum emitter-base reverse voltage (V_EBO) for PN2222A,412 is 6 V, defined as the maximum voltage that can be applied from emitter to base with collector open (I_C = 0). Exceeding this risks junction breakdown; design practice limits steady-state V_EB to ≤ 5 V, especially in circuits with inductive base drive or negative transients.