onsemi PN2222ARLRMG

Overview

PN2222ARLRMG from onsemi is an NPN silicon general-purpose transistor in TO-92 package, rated for 40 V_CEO, 600 mA continuous collector current, and 625 mW dissipation at T_A = 25°C. It delivers h_FE ≥ 100 at I_C = 10 mA, V_CE = 10 V, and supports switching applications with t_r ≤ 25 ns and t_f ≤ 60 ns.

For engineers reviewing the PN2222ARLRMG datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO/V_CBO ratings, DC current gain consistency across temperature, saturation voltage at defined I_C/I_B ratios, thermal resistance (R_θJA = 200°C/W), and TO-92 mechanical compatibility in low-power analog and digital switching circuits.

Technical Context

The PN2222ARLRMG operates as a medium-current, general-purpose NPN bipolar junction transistor optimized for linear amplification and saturated switching. Its h_FE spans 100–300 at I_C = 10 mA and extends to ≥300 at I_C = 150 mA under specified bias conditions, with f_T = 300 MHz enabling RF-capable small-signal use up to VHF.

It features low leakage: I_CBO ≤ 0.01 µA at V_CB = 50 V, I_CEX ≤ 10 nA at V_CE = 60 V, and I_EBO ≤ 100 nA at V_EB = 3.0 V - supporting stable biasing in precision amplifier stages and low-power logic interfaces.

Key Specifications

Pinout & Package

PN2222ARLRMG uses the industry-standard TO-92 (Case 29, Style 1) plastic package with 3 leads and through-hole mounting. The package measures 4.45–5.20 mm in length (A), 4.32–5.33 mm in width (B), and has a lead pitch of 2.54 mm (P).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with PN2222ARLRMG, MMBT2222ALT1G offers improved thermal performance and guaranteed high-speed response, while BC547C trades off current capacity and switching metrics for ultra-high DC gain in micro-power amplifiers - making PN2222ARLRMG the balanced choice for general-purpose 600 mA switching and medium-frequency amplification.

Availability

PN2222ARLRMG is available at Aetrix Electronics and suitable for LED driver circuits, relay interface stages, audio pre-amplifier stages, and signal level shifter designs requiring stable component supply, long-lifecycle support, and TO-92 footprint compatibility.

Supply support for PN2222ARLRMG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

PN2222ARLRMG belongs to the legacy PN2222A family - a long-standing line of general-purpose NPN transistors engineered for broad utility in discrete analog and digital circuit design, emphasizing reliability, manufacturability, and cross-platform compatibility.

FAQ

What is the maximum collector-emitter voltage rating for PN2222ARLRMG?

The PN2222ARLRMG has a maximum collector-emitter voltage (V_CEO) rating of 40 Vdc. This value is confirmed in the Absolute Maximum Ratings table of the official onsemi datasheet (Publication Order Number PN2222/D, Rev. 0). Exceeding this voltage risks avalanche breakdown and permanent device failure. Designers should maintain at least 20% derating margin - i.e., limit operational V_CE to ≤32 V - in safety-critical or thermally stressed environments. The PN2222ARLRMG's 40 V rating makes it suitable for 24 V industrial control and 36 V automotive auxiliary systems.

Does PN2222ARLRMG have a specified current gain (h_FE) range at 150 mA collector current?

Yes, the PN2222ARLRMG specifies h_FE ≥ 300 at I_C = 150 mA, V_CE = 10 V, and T_A = 25°C per the Electrical Characteristics table. This high gain at elevated current supports efficient base drive in medium-power switching applications - for example, enabling a 15 mA base current to reliably saturate the PN2222ARLRMG at 150 mA collector current. Note that h_FE decreases at extreme temperatures: minimum values drop to 100 at –55°C and remain ≥100 at +125°C under same test conditions.

What is the thermal resistance junction-to-ambient (R_θJA) for PN2222ARLRMG in standard PCB mounting?

The PN2222ARLRMG has a thermal resistance junction-to-ambient (R_θJA) of 200°C/W when mounted on a standard FR-4 PCB with minimal copper area, as stated in the Thermal Characteristics section of the onsemi datasheet. This value assumes natural convection cooling with no heatsink. To sustain 625 mW dissipation at T_A = 25°C, the junction temperature would reach 150°C - the absolute maximum. For reliable long-term operation, designers should limit power dissipation to ≤300 mW or increase copper pour area to reduce effective R_θJA. The PN2222ARLRMG's R_θJA is typical for TO-92 devices but higher than surface-mount alternatives like SOT-23 variants.

Is PN2222ARLRMG suitable for high-frequency amplifier applications?

Yes, the PN2222ARLRMG is suitable for high-frequency amplifier applications up to VHF, with a current-gain bandwidth product (f_T) of 300 MHz measured at I_C = 20 mA, V_CE = 20 V, and f = 100 MHz. Its input capacitance (C_ibo) is 25 pF and output capacitance (C_obo) is 8.0 pF, supporting stable impedance matching in tuned RF stages. However, noise figure is 4.0 dB only at 1 kHz - not optimized for low-noise HF reception. For VHF oscillator buffers, broadband preamps, or harmonic generators, the PN2222ARLRMG delivers predictable gain and phase response, provided layout minimizes stray inductance and grounding is solid.

How does the pin configuration of PN2222ARLRMG differ from PNP transistors in TO-92 packages?

The PN2222ARLRMG uses TO-92 Style 1 pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector - standardized for NPN devices. In contrast, PNP transistors like the PN2907A use the same physical TO-92 package but reverse current flow: their emitter is typically Pin 1 or Pin 3 depending on variant, and biasing requires negative base-emitter voltage. Swapping PN2222ARLRMG with a PNP without circuit redesign causes immediate functional failure - e.g., inverted logic states or inability to sink/supply current correctly. Always verify pinout using the marking diagram (PN222x = Device Code, YWW = Date Code) and never assume symmetry between NPN and PNP TO-92 parts.