onsemi PN2222G

Overview

PN2222G from ON Semiconductor is an NPN silicon general-purpose transistor in TO-92 package, rated for 30 V_CEO, 600 mA continuous collector current, and 625 mW power dissipation at T_A = 25°C. It serves as a low-voltage switching or amplification device in discrete logic interfaces, LED drivers, and signal conditioning circuits.

For engineers reviewing the PN2222G datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO/I_C derating at elevated ambient temperatures, h_FE variation across operating current range (35–300), saturation voltage at defined I_C/I_B ratios, thermal resistance (R_θJA = 200°C/W), and TO-92 mechanical compatibility with manual or wave-solder assembly.

Technical Context

The PN2222G operates as a standard bipolar junction transistor with fixed emitter-base and collector-base junction structures optimized for DC and low-frequency AC operation up to 250 MHz f_T. Its gain-bandwidth product and small-signal parameters (h_ie, h_fe, h_oe) are specified at 1 kHz and 100 MHz test conditions, supporting linear amplification and digital switching functions.

It exhibits defined saturation behavior with V_CE(sat) ≤ 0.4 V at I_C = 150 mA / I_B = 15 mA and V_BE(sat) ≤ 1.3 V under same conditions. Cutoff leakage is characterized by I_CBO ≤ 0.01 µA at V_CB = 50 V and I_CEX ≤ 10 nA at V_CE = 60 V, enabling reliable off-state isolation in low-power control paths.

Key Specifications

Pinout & Package

PN2222G is housed in a TO-92 (Case 29, Style 1) plastic package with 3 leads. The package has standardized dimensions (A = 4.45–5.20 mm, B = 4.32–5.33 mm, C = 3.18–4.19 mm) and is compatible with manual insertion, wave soldering, and automated tape-and-reel handling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with PN2222A and BC547B, PN2222G offers the optimal balance of 30 V voltage rating, 600 mA current capability, and TO-92 manufacturability for cost-sensitive medium-power switching - making it preferable over BC547B in load-driving roles and over PN2222A where 40 V margin is unnecessary.

Availability

PN2222G is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, relay coil actuation, and discrete logic level shifting requiring stable component supply and long-term industrial availability.

Supply support for PN2222G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensors, and discrete devices for automotive, industrial, and consumer applications.

PN2222G belongs to ON Semiconductor's legacy general-purpose transistor product line, designed for broad utility in cost-sensitive, medium-power linear and switching applications across industrial controls and embedded systems.

FAQ

What is the maximum collector-emitter voltage rating for PN2222G?

The PN2222G has a maximum collector-emitter voltage (V_CEO) rating of 30 VDC. This value is absolute - exceeding it risks avalanche breakdown and permanent device failure. Designers must ensure that the peak voltage across the collector and emitter terminals, including transients and ripple, remains below this limit under all operating conditions, especially during inductive load switching.

Does PN2222G support switching applications, and what are its key timing parameters?

Yes, PN2222G supports discrete switching applications. While full switching characterization is documented for PN2222A, PN2222G shares the same TO-92 construction and core die process. Its typical switching performance includes turn-on delay <10 ns, rise time <25 ns, storage time <225 ns, and fall time <60 ns under V_CC = 30 V, I_C = 150 mA, and I_B = 15 mA conditions - sufficient for <100 kHz digital switching.

What is the thermal resistance of PN2222G, and how does it affect PCB layout?

PN2222G has a junction-to-ambient thermal resistance (R_θJA) of 200°C/W in standard TO-92 mounting on FR-4 with no copper pour. This means each watt dissipated raises the junction temperature by 200°C above ambient. To maintain T_J ≤ 150°C at 25°C ambient, power dissipation must stay below 625 mW - achievable only with minimal copper area unless forced air or heatsinking is added.

How does the DC current gain (h_FE) of PN2222G vary with operating conditions?

PN2222G's h_FE ranges from 35 (min at I_C = 0.1 mA) to 300 (max at I_C = 10 mA), dropping to 40 at I_C = 500 mA. This wide variation requires bias networks to be designed for worst-case h_FE - e.g., using I_B ≥ I_C/35 for guaranteed saturation. Temperature also affects h_FE: it increases ~0.5%/°C, necessitating thermal compensation in precision amplifier designs.

Is PN2222G RoHS compliant and lead-free?

Yes, PN2222G is RoHS compliant and lead-free. ON Semiconductor confirms compliance with Directive 2011/65/EU and subsequent amendments. The device uses matte tin (Sn) lead finish on TO-92 leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 requirements - allowing unlimited floor life and standard reflow profiles without baking.