onsemi PN2222TF

Overview

PN2222TF from ON Semiconductor is an NPN general-purpose bipolar junction transistor (BJT) designed for medium-power amplification and switching applications, with a 40 V collector-emitter breakdown voltage (V_CEO), 1.0 A maximum collector current (I_C), and DC current gain (h_FE) ranging from 35 to 300 depending on operating conditions - widely used in discrete amplifier stages, relay drivers, and low-speed digital logic interfaces.

For engineers reviewing the PN2222TF datasheet, pinout, applications, or equivalent options, key selection considerations include its TO-92 package thermal limits (625 mW at 25°C, derating 5.0 mW/°C), saturation voltage (V_CE(sat) = 0.3 V at I_C = 150 mA / I_B = 15 mA), and small-signal bandwidth (f_T = 300 MHz), all critical for reliable analog gain staging and fast-switching designs.

Technical Context

The PN2222TF operates as a silicon NPN BJT with epitaxial base construction, optimized for linear amplification and saturated switching. Its h_FE spans 35–300 across I_C = 0.1 mA to 500 mA and V_CE = 1–10 V, supporting both low-current bias networks and higher-drive switching loads. Thermal resistance R_θJA is 200 °C/W on standard FR-4 PCBs, defining safe continuous operation within -55°C to +150°C junction temperature range.

Switching performance is characterized by delay time (t_d = 10 ns), rise time (t_r = 25 ns), storage time (t_s = 225 ns), and fall time (t_f = 60 ns) under V_CC = 30 V, enabling use in <100 kHz pulse applications. Small-signal parameters include C_obo = 8.0 pF and f_T = 300 MHz, confirming suitability for RF preamplifier and IF stage roles up to VHF.

Key Specifications

Pinout & Package

PN2222TF is housed in a JEDEC-compliant TO-92 plastic package with straight leads and E-B-C pin configuration (Emitter–Base–Collector, viewed from flat side with leads down). The package supports manual soldering and automated tape-and-reel placement (per PKG-ZA03F_BK specification).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with MMBT2222ALT1G and PN2222A, the PN2222TF offers identical core transistor performance in TO-92 tape-and-reel format - delivering optimal manufacturability for high-volume through-hole assembly while maintaining full compatibility with legacy PN2222A designs and thermal profiles.

Availability

PN2222TF is available at Aetrix Electronics and suitable for audio preamplification, relay driving, and low-speed digital interface applications requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for PN2222TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensor, and discrete solutions for automotive, industrial, and cloud infrastructure markets.

The PN2222TF belongs to ON Semiconductor's legacy general-purpose BJT portfolio, originally developed by Fairchild Semiconductor to deliver robust, cost-effective amplification and switching in industrial control, consumer electronics, and power interface circuits.

FAQ

What is the maximum continuous collector current for PN2222TF?

The PN2222TF supports a maximum continuous collector current (I_C) of 1.0 A at T_A = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper PCB thermal management; actual usable current decreases with ambient temperature due to 5.0 mW/°C derating above 25°C. For sustained 500 mA operation, ensure junction temperature stays below 150°C using appropriate copper pour or airflow.

Does PN2222TF have the same pinout as PN2222A?

Yes, PN2222TF uses the identical TO-92 package and E-B-C pin configuration (Emitter–Base–Collector, viewed from flat side with leads down) as PN2222A. Both share the same mechanical drawing (ZA03F) and electrical specifications; the only differences are packaging format (tape-and-reel vs. bulk/ammo) and top-marking convention post-Fairchild integration into ON Semiconductor.

What is the typical DC current gain (h_FE) of PN2222TF at 10 mA collector current?

At I_C = 10 mA and V_CE = 10 V, the PN2222TF exhibits a minimum h_FE of 75 and a typical value of approximately 150–200, per its Electrical Characteristics table. Gain varies with temperature and operating point - at -55°C it drops to ≥35, while at 150 mA it rises to ≥100. Designers should use min/max values for worst-case bias analysis.

Can PN2222TF be used in RF amplifier applications?

Yes, PN2222TF is suitable for RF amplifier applications up to ~100 MHz due to its 300 MHz current-gain bandwidth product (f_T) and low output capacitance (C_obo = 8.0 pF). It has been validated in VHF preamplifier stages and IF amplifiers; however, stability must be confirmed with proper neutralization and impedance matching, especially above 30 MHz.

What is the thermal resistance (R_θJA) of PN2222TF on a standard PCB?

The PN2222TF has a junction-to-ambient thermal resistance (R_θJA) of 200 °C/W when mounted on a standard FR-4 PCB (76 mm × 114 mm × 1.57 mm) with minimum land pattern, as defined in its Thermal Characteristics table. This value assumes no added copper pour or heatsinking; adding thermal vias or copper planes can reduce R_θJA by 20–40% in practice.