onsemi PN2369

Overview

PN2369 from Fairchild Semiconductor is an NPN bipolar junction transistor optimized for high-speed saturated switching at collector currents from 10 mA to 100 mA, with V_CEO = 15 V, h_FE = 40–120 (at I_C = 10 mA), V_CE(sat) = 0.25 V, and t_off = 18 ns - used in low-voltage digital logic interface and pulse generation circuits.

For engineers reviewing the PN2369 datasheet, pinout, applications, or equivalent options, key selection considerations include its TO-92 package, guaranteed V_(BR)CEO ≥ 15 V, DC current gain range, saturation voltage under defined drive conditions, and thermal resistance of 357 °C/W.

Technical Context

The PN2369 is a general-purpose NPN switching transistor fabricated using Fairchild's Process 21. It operates with a maximum junction temperature of 150 °C and supports continuous collector current up to 200 mA, though its specified switching performance is validated at I_C = 10–100 mA with base drive I_B = 1–3 mA.

Its small-signal current gain h_fe is 5.0 at f = 100 MHz, and it exhibits C_obo = 4.0 pF and C_ibo = 5.0 pF at 1 MHz, indicating suitability for low-frequency switching rather than RF amplification. Storage time (t_s = 13 ns) and turn-off time (t_off = 18 ns) confirm fast recovery in saturated logic gate drivers.

Key Specifications

Pinout & Package

PN2369 is housed in a standard through-hole TO-92 package with 3 leads. The case outline conforms to JEDEC TO-92 variant A, with lead spacing of 1.27 mm (0.050") and overall length 4.58 mm ±0.20 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Compared with 2N3904 and PN2222A, the PN2369 offers tighter t_off/t_on timing and lower V_CE(sat) at modest current levels, making it preferable for speed-critical 10–100 mA saturated switching where 15 V breakdown is sufficient.

Availability

PN2369 is available at Aetrix Electronics and suitable for logic-level interface, digital pulse generation, and low-voltage relay driver applications requiring stable component supply and long-term obsolescence management.

Supply support for PN2369 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The PN2369 belongs to Fairchild's legacy general-purpose bipolar transistor family designed for cost-sensitive, high-volume switching applications in consumer, industrial, and computing equipment.

FAQ

What is the maximum continuous collector current rating for PN2369?

The PN2369 has an absolute maximum continuous collector current (I_C) of 200 mA at T_A = 25 °C. However, its electrical characteristics - including h_FE, V_CE(sat), and switching times - are specified only up to 100 mA. For reliable saturated switching performance, design should target I_C ≤ 100 mA per the datasheet test conditions.

Is PN2369 pin-compatible with 2N3904?

Yes, PN2369 is pin-compatible with 2N3904 in the TO-92 package: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. Both share identical lead assignments and mechanical dimensions. However, PN2369 has lower V_CEO (15 V vs. 40 V) and faster t_off (18 ns vs. ~25 ns), so direct substitution requires verification of voltage margin in the target circuit.

What is the typical V_BE(sat) for PN2369 at I_C = 10 mA?

The PN2369 exhibits a V_BE(sat) range of 0.7 V to 0.85 V when operating at I_C = 10 mA and I_B = 1.0 mA. This forward base-emitter voltage determines required base drive headroom in logic-driven applications and impacts total power dissipation in the base network.

Does PN2369 support operation at elevated temperatures?

Yes, PN2369 is rated for junction and storage temperatures from –55 °C to +150 °C. At 125 °C ambient, its I_CBO increases to 30 µA (vs. 0.4 µA at 25 °C), and power dissipation must be derated linearly at 2.8 mW/°C above 25 °C. Full functionality is maintained within this range when thermal design respects R_θJA = 357 °C/W.

Can PN2369 be used in linear amplifier applications?

No - the PN2369 is explicitly characterized and optimized for saturated switching, not linear amplification. Its h_fe is only specified at 100 MHz under small-signal conditions (5.0), and no linearity, distortion, or frequency response data is provided. For analog amplification, use transistors specifically characterized for h_FE stability and f_T across bias ranges, such as BC547 or MMBT3904.