Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi PN2369A_D27Z

Part No.:
PN2369A_D27Z
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet:
AetrixPN2369A_D27Z.pdf
Description:
TRANS NPN 15V 0.2A TO-92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,559

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PN2369A_D27Z from Fairchild Semiconductor is an NPN switching transistor optimized for high-speed saturated switching at collector currents from 10 mA to 100 mA, with VCEO = 15 V, IC = 200 mA continuous, and toff = 18 ns at VCC = 3.0 V - used in low-power digital logic interface and pulse generation circuits.

For engineers reviewing the PN2369A_D27Z datasheet, pinout, applications, or equivalent options, key selection criteria include saturation voltage (VCE(sat) = 0.2 V @ IC = 10 mA/IB = 1.0 mA), thermal resistance (RθJA = 556 °C/W in SOT-23), and TO-92/SOT-23 dual-package availability per EOL code D27Z.

Technical Context

The PN2369A_D27Z implements a silicon planar epitaxial NPN structure fabricated in Fairchild's Process 21, supporting fast switching via low storage time (ts = 13 ns) and controlled base-emitter saturation behavior (VBE(sat) = 0.7 V @ IC = 10 mA/IB = 1.0 mA).

Its electrical performance is characterized across –55°C to +125°C ambient, with guaranteed hFE ≥ 40 at IC = 10 mA/VCE = 1.0 V and Cobo = 4.0 pF at VCB = 5.0 V - enabling stable operation in compact timing and level-shifting circuits without external compensation.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO15 V - maximum safe collector-emitter voltage before breakdown under open-base conditions; defines rail compatibility in 12 V logic interfaces.
IC (continuous)200 mA - absolute max DC collector current; supports drive capability for small relays, LEDs, and gate inputs without derating below 25°C.
VCE(sat)0.2 V @ IC/IB = 10 mA/1.0 mA - ensures <0.5 mW power loss in saturation, critical for battery-powered switch nodes.
toff18 ns @ VCC = 3.0 V, IC/IB1/IB2 = 10 mA/3.0 mA/1.5 mA - enables >10 MHz square-wave switching in clock distribution and pulse shaping.
hFE40–120 @ IC = 10–100 mA - provides predictable base drive requirements across industrial temperature range (–55°C to +125°C).
RθJA (SOT-23)556 °C/W - limits junction rise to ≤56°C at 100 mW dissipation on FR-4; mandates minimal copper area for thermal management.
Cobo4.0 pF @ VCB = 5.0 V - minimizes Miller effect in high-frequency switching, preserving edge integrity up to 100 MHz.

Pinout & Package

PN2369A_D27Z is supplied in TO-92 package (EOL code D27Z denotes tape-and-reel packaging with emitter-first orientation, adhesive tape on top side, flat side down). The device has three terminals: Collector (C), Base (B), Emitter (E).

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Primary current sink nodeConnected to load return path; rated for 15 V VCEO and 200 mA continuous; requires heatsinking above 100 mW in SOT-23.
Base (B)Control input for minority-carrier injectionDrives transistor into saturation with 1.0 mA to switch 10 mA load; VBE(sat) = 0.7 V defines required driver voltage headroom.
Emitter (E)Reference terminal and current sourceTypically grounded in low-side switch configuration; reverse-biased VEBO = 4.5 V limits allowable negative swing at base.

Key Features

FeatureDesign Value
High-speed switchington = 12 ns, toff = 18 ns - enables clean digital waveform reproduction in microcontroller GPIO expansion and pulse-width modulation stages.
Low VCE(sat)0.2 V @ 10 mA - reduces conduction loss by >70% vs. general-purpose transistors (e.g., PN2222A), extending battery life in portable devices.
Wide temperature operation–55°C to +150°C junction range - supports deployment in automotive engine control modules and industrial PLC I/O cards without derating.
Process 21 fabricationConsistent hFE distribution and tight Cobo/Cibo matching - eliminates need for binning in high-volume consumer electronics assembly.
Dual-package availabilityTO-92 (bulk/tape) and SOT-23 (D87Z) variants - allows footprint reuse across prototyping (through-hole) and production (SMT) phases.

Applications

Logic Level TranslationLED Driver Switch

Use Scenario: Converting 3.3 V microcontroller output to drive 5 V TTL inputs in mixed-voltage systems.

IC Role / Device Role / Timing Role: NPN switch configured as active-low level shifter with base resistor network.

Use Value: VCE(sat) ≤ 0.25 V ensures output low-state remains <0.4 V at 10 mA, meeting TTL VIH/VIL margins while dissipating <2.5 mW.

Use Scenario: Driving indicator LEDs in handheld medical instruments with strict power budget.

IC Role / Device Role / Timing Role: Low-side constant-current switch controlling LED anode via series resistor.

Use Value: hFE ≥ 40 at IC = 20 mA guarantees reliable turn-on with ≤500 µA base drive, reducing MCU GPIO loading.

Pulse Generator Output StageRelay Driver Interface

Use Scenario: Amplifying CMOS clock signals to drive 50 Ω transmission lines in test equipment.

IC Role / Device Role / Timing Role: Emitter-follower buffer with compensated base drive for <10 ns edge fidelity.

Use Value: Cobo = 4.0 pF and tr/tf < 10 ns preserve signal integrity up to 50 MHz without overshoot.

Use Scenario: Isolating microcontroller outputs from 12 V relay coils in HVAC control panels.

IC Role / Device Role / Timing Role: Saturated switch with flyback diode protection and base current limiting.

Use Value: VCEO = 15 V exceeds 12 V coil supply with margin; ts = 13 ns prevents contact chatter during rapid cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MMBT2369AIdentical die and electrical specs; differs only in SOT-23 marking ("1S") and reel packaging (D87Z).No functional difference; selected when SMT placement and automated assembly are required.Direct form-fit replacement for PN2369A_D27Z in SMT designs; same hFE, VCE(sat), and switching times.
PN2222AHigher VCEO (40 V), higher IC (800 mA), but slower toff (250 ns) and higher VCE(sat) (0.3 V min).Suitable for higher-voltage loads but not for >1 MHz switching due to storage delay.Choose PN2222A only when VCEO > 15 V is mandatory; avoid in high-speed logic interfaces where PN2369A_D27Z's 18 ns toff is critical.

Compared with MMBT2369A, PN2369A_D27Z offers identical core switching performance in TO-92 packaging for through-hole prototyping and legacy repair, while PN2222A trades speed for voltage headroom - making PN2369A_D27Z optimal for cost-sensitive, high-frequency digital switching below 15 V.

Availability

PN2369A_D27Z is available at Aetrix Electronics and suitable for logic level translation, LED driver switching, pulse generator output stages, and relay driver interfaces requiring stable component supply across industrial, medical, and test equipment programs.

Supply support for PN2369A_D27Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor (now part of ON Semiconductor) is a global designer of high-performance analog and discrete semiconductors, founded in 1957 and known for innovation in power management and signal-path components.

The PN2369A_D27Z belongs to Fairchild's legacy NPN switching transistor product line, engineered specifically for high-speed saturated operation in space-constrained digital interface and control circuits.

FAQ

What is the package type and orientation for PN2369A_D27Z?

PN2369A_D27Z uses the TO-92 package with EOL code D27Z indicating tape-and-reel packaging where the first wire off the package is the emitter, adhesive tape is on the top side, and the flat side of the transistor faces downward. This orientation is standardized per Fairchild's TO-92 Tape and Reel Data Rev. B1.

Does PN2369A_D27Z support operation at elevated temperatures?

Yes, PN2369A_D27Z is rated for junction temperatures from –55°C to +150°C. Electrical characteristics including hFE and VCE(sat) are guaranteed over this full range, with derated power dissipation above 25°C (2.8 mW/°C for TO-92). Its Process 21 silicon ensures stable gain and leakage up to +125°C ambient.

What is the typical storage time (ts) of PN2369A_D27Z and why does it matter?

PN2369A_D27Z has a typical storage time ts of 13 ns under standard test conditions (IB1 = IB2 = IC = 10 mA). This parameter directly limits maximum switching frequency - shorter ts enables faster turn-off and cleaner square-wave output in digital logic and PWM applications, distinguishing it from slower general-purpose transistors like PN2222A.

Can PN2369A_D27Z be used as a direct replacement for PN2222A in existing designs?

PN2369A_D27Z is not a drop-in replacement for PN2222A due to lower VCEO (15 V vs. 40 V) and significantly faster switching (toff = 18 ns vs. 250 ns), which may cause unintended oscillation if base drive impedance is mismatched. It can replace PN2222A only in low-voltage (<15 V), high-speed applications where its tighter hFE tolerance and lower VCE(sat) provide benefit.

What are the thermal resistance values for PN2369A_D27Z in TO-92 package?

For PN2369A_D27Z in TO-92 package, RθJA = 357 °C/W and RθJC = 125 °C/W, measured on FR-4 PCB (1.6" × 1.6" × 0.06"). Total device dissipation is 350 mW at 25°C, derating linearly by 2.8 mW/°C above that temperature - requiring careful layout if operating near thermal limits in enclosed environments.

PN2369A_D27Z Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
200 mA
Voltage - Collector Emitter Breakdown (Max):
15 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 10mA, 100mA
Current - Collector Cutoff (Max):
400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 10mA, 1V
Power - Max:
350 mW
Frequency - Transition:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

PN2369A_D27Z FAQ

1.How can I place an order for PN2369A_D27Z through Aetrix?

Please submit a Request for Quotation (RFQ) for PN2369A_D27Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PN2369A_D27Z reliable?

The price and inventory of PN2369A_D27Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PN2369A_D27Z is usually 5 days.

3.What payment methods are accepted for PN2369A_D27Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PN2369A_D27Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PN2369A_D27Z?

PN2369A_D27Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PN2369A_D27Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PN2369A_D27Z?

For technical support, including PN2369A_D27Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PN2369A_D27Z requirements.

6.How does Aetrix verify that PN2369A_D27Z is sourced from the original manufacturer or authorized distributors?

All PN2369A_D27Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PN2369A_D27Z meets industry standards.

7.What is the process for return or replacement of PN2369A_D27Z?

All PN2369A_D27Z units undergo pre-shipment inspection (PSI). If there is an issue with PN2369A_D27Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PN2369A_D27Z part is unused and in its original packaging.

Return procedure for PN2369A_D27Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PN2369A_D27Z Tags

  • PN2369A_D27Z
  • PN2369A_D27Z PDF
  • PN2369A_D27Z Datasheet
  • PN2369A_D27Z Specifications
  • PN2369A_D27Z Images
  • onsemi
  • onsemi PN2369A_D27Z
  • Buy PN2369A_D27Z
  • PN2369A_D27Z Price
  • PN2369A_D27Z Distributor
  • PN2369A_D27Z Supplier
  • PN2369A_D27Z Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER