onsemi PN2369_D26Z

Overview

PN2369_D26Z from Fairchild Semiconductor is an NPN bipolar junction transistor designed for high-speed saturated switching at collector currents from 10 mA to 100 mA. It features a V_CEO of 15 V, V_CBO of 40 V, I_C continuous rating of 200 mA, h_FE of 40–120 at I_C = 10 mA, and TO-92 package. It is used in low-power digital logic interface and pulse generation circuits.

For engineers reviewing the PN2369_D26Z datasheet, pinout, applications, or equivalent options, key selection considerations include its 15 V V_CEO, 200 mA I_C rating, 13 ns storage time, 12 ns turn-on time, and TO-92 mechanical compatibility with legacy through-hole logic-level switching designs.

Technical Context

The PN2369_D26Z operates as a general-purpose NPN BJT optimized for saturated switching rather than linear amplification. Its design emphasizes fast transition times (t_on = 12 ns, t_off = 18 ns, t_s = 13 ns) and low saturation voltages (V_CE(sat) = 0.25 V at I_C = 10 mA / I_B = 1.0 mA).

Thermal performance is defined by R_θJA = 357 °C/W and P_D = 350 mW at 25 °C, derating linearly above ambient. It supports operation across –55 °C to +150 °C junction temperature range and meets standard JEDEC TO-92 mechanical specifications.

Key Specifications

Pinout & Package

PN2369_D26Z is housed in a standard JEDEC TO-92 plastic package with 3 leads, lead material is tin-plated copper, and body dimensions conform to Fairchild's Rev. A drawing: 4.58 mm × 3.60 mm × 14.47 mm (L×W×H), with 1.27 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Compared with MMBT2222A and 2N2222A, PN2369_D26Z offers the fastest switching (12 ns t_on) and lowest V_CE(sat) among TO-92 NPN transistors in its class, but trades off voltage rating-making it optimal for compact, high-frequency, low-voltage (<15 V) saturated switching where speed and efficiency are prioritized over breakdown margin.

Availability

PN2369_D26Z is available at Aetrix Electronics and suitable for logic-level interface, digital pulse generation, relay driver, and LED current switch applications requiring stable component supply and long-term obsolescence management.

Supply support for PN2369_D26Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

PN2369_D26Z belongs to Fairchild's legacy "FACT Quiet Series™" NPN switching transistor family, engineered specifically for low-noise, high-speed saturated operation in digital and interface circuits.

FAQ

What is the maximum collector-emitter voltage rating for PN2369_D26Z?

The maximum collector-emitter voltage (V_CEO) for PN2369_D26Z is 15 V at T_A = 25 °C. This rating applies under open-base conditions and must not be exceeded to ensure reliable operation. Exceeding this value risks permanent device failure due to avalanche breakdown. The PN2369_D26Z datasheet specifies that V_CEO is tested with I_C = 10 mA and I_B = 0, and it is derived from a maximum junction temperature limit of 150 °C.

Is PN2369_D26Z suitable for linear amplifier applications?

No, PN2369_D26Z is not optimized for linear amplification. Its datasheet explicitly states it is "designed for high speed saturated switching," and its h_FE variation (40–120), low V_CE(sat), and fast switching characteristics reflect a switching-optimized process (Fairchild Process 21). For analog gain stages, devices with tighter h_FE tolerance, higher f_T, and specified linearity parameters should be selected instead of PN2369_D26Z.

What is the thermal resistance from junction to ambient for PN2369_D26Z?

The junction-to-ambient thermal resistance (R_θJA) for PN2369_D26Z is 357 °C/W under standard test conditions (still air, mounted on FR-4 PCB with minimum copper). This value assumes no heatsinking and defines the temperature rise per watt of dissipated power. At 25 °C ambient, the 350 mW maximum power dissipation drops by 2.8 mW/°C above that temperature, meaning PN2369_D26Z reaches thermal limit at ~125 °C case temperature under full load.

Does PN2369_D26Z have a documented pinout compatible with standard TO-92 footprints?

Yes, PN2369_D26Z uses the standard JEDEC TO-92 configuration: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector, viewed from the flat side with leads pointing downward. This matches industry-standard TO-92 layouts used by 2N2222A, PN2222, and BC547, enabling direct mechanical substitution in through-hole designs without PCB modification.

What is the typical storage time (t_s) for PN2369_D26Z and why does it matter?

The typical storage time (t_s) for PN2369_D26Z is 13 ns, measured under IB1 = IB2 = IC = 10 mA. Storage time reflects how long excess minority carriers remain in the base region after drive removal, directly limiting maximum switching frequency and causing delay in turn-off. A low t_s like that of PN2369_D26Z enables clean square-wave output in high-speed digital interfaces and reduces switching losses in pulse applications-critical for maintaining signal integrity in timing-critical circuits using PN2369_D26Z.