NXP Semiconductors PN2907A,116

Overview

PN2907A from NXP Semiconductors is a PNP bipolar junction transistor designed for general-purpose switching and linear amplification in low-voltage DC circuits. It supports −60 V collector-base and collector-emitter voltages, −600 mA DC collector current, 500 mW power dissipation at 25 °C ambient, and delivers DC current gain (h_FE) of 100–300 at −150 mA collector current. It is commonly used in relay drivers, LED switches, and discrete logic-level inverters.

For engineers reviewing the PN2907A datasheet, PN2907A pinout, PN2907A application, or PN2907A equivalent, key selection criteria include verified PNP polarity, TO-92/SOT54 through-hole package compatibility, −60 V/−600 mA rating compliance, saturation voltage under defined drive conditions, and thermal resistance (250 K/W) for board-level thermal design.

Technical Context

The PN2907A operates as a standard silicon PNP BJT with base-controlled current amplification. Its DC current gain varies with operating point: minimum 100 at −150 mA, dropping to 50 at −500 mA, confirming its optimized use in medium-current switching rather than high-linearity analog stages.

Switching performance is characterized by 40 ns turn-on time, 365 ns turn-off time, and 300 ns storage time under −150 mA conduction with ±15 mA base drive-indicating suitability for ≤1 MHz digital switching applications where moderate speed and robust saturation are prioritized over RF or high-frequency linearity.

Key Specifications

Pinout & Package

PN2907A is housed in a plastic single-ended leaded through-hole package designated TO-92 (JEDEC), SC-43A (IEC), and SOT54 (NXP). The package has three leads, spaced on 2.54 mm pitch, with standardized mechanical dimensions including 14.5 mm body length and 4.8 mm width.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching transistor applications.

Compared with MMBT2907A and BC557, the PN2907A offers superior power handling (500 mW vs. 350/300 mW), higher voltage margin (−60 V vs. −60/−45 V), and proven reliability in legacy through-hole industrial controls-making it the preferred choice for medium-power, serviceable, and thermally demanding PNP switching roles.

Availability

PN2907A is available at Aetrix Electronics and suitable for relay driver circuits, LED current switches, digital logic inverters, and discrete power regulator stages requiring stable component supply and long-term obsolescence management.

Supply support for PN2907A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The PN2907A belongs to NXP's legacy discrete transistor product line, engineered for cost-effective, robust, and field-proven switching in industrial control panels, power supplies, and electro-mechanical interfaces.

FAQ

What is the maximum collector-emitter voltage rating for PN2907A?

The PN2907A has a maximum collector-emitter voltage (V_CEO) rating of −60 V with the base open. This rating is absolute and must not be exceeded under any operating condition, including transient spikes. Derating is recommended for long-term reliability in high-temperature environments. The PN2907A datasheet confirms this value in both Limiting Values and Quick Reference Data sections.

Does PN2907A have a complementary NPN transistor?

Yes, the PN2222A is the designated NPN complement to the PN2907A, sharing matching voltage, current, and gain specifications, as well as identical TO-92/SOT54 packaging. Both devices are optimized for paired use in push-pull amplifiers, logic inverters, and differential switching circuits. The PN2907A datasheet explicitly references PN2222A as its NPN counterpart.

What is the typical DC current gain (h_FE) of PN2907A at 150 mA collector current?

The PN2907A exhibits a DC current gain (h_FE) ranging from 100 to 300 when biased at V_CE = −10 V and I_C = −150 mA. This range is specified in the Characteristics table and reflects production variation across units. Designers should use h_FE = 100 for worst-case base drive calculations to ensure saturation across all lots. The PN2907A datasheet provides this data in the "h_FE" row under "V_CE = −10 V; I_C = −150 mA" condition.

Can PN2907A be used in surface-mount designs?

No, the PN2907A is exclusively available in the through-hole TO-92/SOT54 package and is not offered in surface-mount variants. For SMT implementations, the MMBT2907A (SOT-23) is the functionally aligned alternative, though it features lower power dissipation (350 mW) and higher thermal resistance. The PN2907A datasheet specifies SC-43A/TO-92 as its sole package option.

What is the thermal resistance from junction to ambient for PN2907A?

The PN2907A has a thermal resistance from junction to ambient (R_th(j-a)) of 250 K/W when mounted on a standard FR4 printed-circuit board, as stated in the Thermal Characteristics section. This value assumes no additional heatsinking and applies only at T_amb ≤ 25 °C. At higher ambient temperatures or elevated power levels, derating curves in the datasheet must be applied to maintain T_j ≤ 150 °C. The PN2907A datasheet lists this parameter under "Thermal Characteristics" with Note 1 specifying the test board condition.