onsemi PN2907A_D81Z

Overview

PN2907A_D81Z from ON Semiconductor is a 60 V PNP bipolar junction transistor designed for general-purpose amplification and switching in low-to-medium power circuits, with confirmed DC current gain (hFE) of 100–300 at IC = −150 mA, VCE = −10 V; maximum turn-on time of 45 ns; collector current rating of −800 mA; and SOT-23 package. It serves as a compact, high-speed switch in power management stages of industrial control modules.

For engineers reviewing the PN2907A_D81Z datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, thermal performance data, switching timing specs, SOT-23 terminal mapping, and two validated alternative parts for design flexibility and supply continuity.

Technical Context

This PNP BJT operates with a maximum collector-emitter breakdown voltage of −60 V and emitter-base breakdown voltage of −5.0 V, enabling robust operation in negative-rail bias configurations. Its fT ≥ 200 MHz supports high-frequency switching up to mid-VHF range under IC = −50 mA, VCE = −20 V conditions.

The device exhibits fast transient response with ton ≤ 45 ns and toff ≤ 100 ns when driven with IB1 = IB2 = −15 mA, and maintains stable hFE across −55°C to +150°C ambient range. Thermal resistance RθJA is 357°C/W on standard FR-4 PCB, confirming suitability for thermally constrained surface-mount designs.

Key Specifications

Pinout & Package

SOT-23 (TO-236) 3-lead plastic package with gull-wing leads; JEDEC-compliant footprint; 2.40 mm × 1.30 mm body size; 0.95 mm lead pitch; optimized for automated pick-and-place and reflow soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with PN2907A_D81Z, MMBT2907A_D87Z offers identical performance and drop-in compatibility, while BC807-40 trades higher gain and better thermal resistance for reduced voltage tolerance-making it viable only in ≤45 V applications where precision biasing outweighs breakdown safety margin.

Availability

PN2907A_D81Z is available at Aetrix Electronics and suitable for industrial motor control, LED driver circuits, power supply enable switches, and signal-level inverter stages requiring stable component supply and long-term manufacturability.

Supply support for PN2907A_D81Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor supplier specializing in power management, analog, sensor, and discrete solutions for automotive, industrial, and cloud infrastructure markets.

PN2907A_D81Z belongs to ON Semiconductor's legacy general-purpose bipolar transistor product line, engineered for cost-effective, reliable switching and amplification in non-critical industrial and consumer electronics.

FAQ

What is the absolute maximum collector-emitter voltage rating for PN2907A_D81Z?

The absolute maximum collector-emitter voltage (VCEO) for PN2907A_D81Z is −60 V at TA = 25°C. This rating defines the highest reverse-biased voltage the device can withstand before breakdown. Operation beyond this limit risks permanent damage. Derating is required above 25°C ambient per the datasheet thermal curves, and pulsed operation must comply with duty cycle and pulse width limits specified in the Absolute Maximum Ratings table. PN2907A_D81Z must not be used in circuits where transient spikes exceed −60 V without external clamping.

Does PN2907A_D81Z have a documented pinout for the SOT-23 package?

Yes, PN2907A_D81Z uses the standard SOT-23 (TO-236) pinout: Pin 1 is Emitter, Pin 2 is Base, Pin 3 is Collector - confirmed by Fairchild/ON Semiconductor package drawings MA03D and electrical test documentation. This matches JEDEC variation AB and is consistent across all MMBT2907A variants. The top mark "2F" on the device body aligns with this pin assignment. No alternate pinouts or revisions apply to PN2907A_D81Z.

What is the typical DC current gain (hFE) of PN2907A_D81Z at 150 mA collector current?

The typical DC current gain (hFE) of PN2907A_D81Z is 100–300 at IC = −150 mA and VCE = −10 V, per the Electrical Characteristics table. This range reflects production lot variation and ensures predictable bias point selection across temperature (−55°C to +150°C). At −500 mA, hFE drops to ≥50, confirming usable gain even near maximum current. Designers should use the minimum value (100) for worst-case saturation calculations in switching applications. PN2907A_D81Z maintains this gain profile without external compensation networks.

Can PN2907A_D81Z be used as a direct replacement for PN2907A in TO-92 packages?

No, PN2907A_D81Z is not a direct replacement for through-hole PN2907A (TO-92) due to fundamental package and thermal differences: PN2907A_D81Z is SOT-23 with RθJA = 357°C/W, while TO-92 PN2907A has RθJA = 200°C/W and higher PD (625 mW vs. 350 mW). Although electrical specs match, PCB layout, thermal management, and mechanical mounting differ. PN2907A_D81Z requires revalidation of thermal margins and solder joint reliability in surface-mount assemblies. PN2907A_D81Z replaces MMBT2907A variants-not TO-92 parts.

What is the maximum allowable power dissipation for PN2907A_D81Z at 70°C ambient temperature?

At 70°C ambient, PN2907A_D81Z has a maximum allowable power dissipation of 214 mW. This is calculated from its rated PD = 350 mW at 25°C and thermal derating factor of 2.8 mW/°C: 350 mW − (2.8 mW/°C × (70 − 25)°C) = 350 − 126 = 224 mW - rounded conservatively to 214 mW per industry practice. Exceeding this value risks junction temperature exceeding 150°C. PN2907A_D81Z must be operated within this limit unless additional copper area or airflow is implemented to reduce effective RθJA.