onsemi PN2907A_J61Z

Overview

PN2907A_J61Z from ON Semiconductor is a 60 V PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-to-medium power circuits, with DC current gain (hFE) of 100–300 at IC = −150 mA, VCE = −10 V, collector current capability up to −800 mA, and turn-off time of 100 ns - used in discrete logic-level switching and analog signal conditioning stages.

For engineers reviewing the PN2907A_J61Z datasheet, pinout, applications, or equivalent options, this page delivers verified package mapping (TO-92 J61Z variant), absolute maximum ratings, thermal resistance (RθJA = 200 °C/W), switching timing specs, and real-world design context for discrete BJT selection in industrial control and power management subsystems.

Technical Context

This PNP BJT operates in common-emitter configuration with breakdown voltages of −60 V (VCEO, VCBO) and −5.0 V (VEBO), supporting robust voltage margin in negative-rail applications. Its fT ≥ 200 MHz enables high-frequency small-signal amplification, while Cob = 8.0 pF and Cib = 30 pF define input/output capacitance behavior at 100 kHz under reverse bias.

Thermal performance is defined for TO-92 mounting on FR-4 PCB (1.6″ × 1.6″ × 0.06″), delivering PD = 625 mW at 25°C with derating of 5.0 mW/°C above ambient. Switching is characterized with IB1 = IB2 = −15 mA, VCC = −6.0 V, and IC = −150 mA, yielding ts = 80 ns storage time and tf = 30 ns fall time.

Key Specifications

Pinout & Package

PN2907A_J61Z uses the TO-92 molded package with 0.200″ lead spacing (J61Z option), featuring three leads in straight-line configuration: Emitter (E), Base (B), Collector (C). Pin 1 is Emitter, Pin 2 is Base, Pin 3 is Collector - confirmed per Fairchild drawing ZA03F.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with PN2907A_J61Z, MMBT2907A trades thermal capacity for miniaturization, while PZT2907A delivers 1.6× higher power handling in a thermally optimized SOT-223 form factor - both retain identical gain, speed, and voltage ratings but differ fundamentally in thermal management strategy and board integration requirements.

Availability

PN2907A_J61Z is available at Aetrix Electronics and suitable for industrial relay drivers, discrete logic inverters, analog sensor amplifiers, and power supply enable switches requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for PN2907A_J61Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global supplier of energy-efficient semiconductor solutions, specializing in power management, analog, and discrete devices for automotive, industrial, and cloud infrastructure markets.

PN2907A_J61Z belongs to ON Semiconductor's legacy general-purpose BJT portfolio, engineered for reliability and consistency in cost-sensitive, high-volume industrial control and power interface applications.

FAQ

What is the pin configuration of PN2907A_J61Z?

PN2907A_J61Z uses the TO-92 J61Z package with straight-line lead form: Pin 1 is Emitter (E), Pin 2 is Base (B), and Pin 3 is Collector (C). This matches JEDEC TO-92 mechanical standard ZA03F and is verified in Fairchild's official package drawing. The device is not pin-compatible with SOT-23 or SOT-223 variants due to differing footprints and terminal assignments.

Does PN2907A_J61Z support operation at elevated temperatures?

Yes, PN2907A_J61Z is rated for junction temperatures from −55°C to +150°C and operates reliably across that full range. At 125°C ambient, its derated power dissipation is 175 mW (625 mW − 5.0 mW/°C × 100°C), which supports continuous 150 mA collector current with appropriate thermal design. Data sheet Figure 5 confirms ICBO remains <100 nA up to 125°C.

What is the minimum hFE guaranteed for PN2907A_J61Z at high current?

PN2907A_J61Z guarantees hFE ≥100 at IC = −150 mA and VCE = −10 V, per the Electrical Characteristics table. At higher currents (IC = −500 mA), hFE drops to ≥50 - a design-critical limitation requiring increased base drive to maintain saturation. This is explicitly documented in the "On Characteristics" section of the datasheet Rev. 1.1.2.

Can PN2907A_J61Z replace NPN transistors like PN2222A in circuit designs?

No - PN2907A_J61Z is a PNP transistor and cannot directly substitute for NPN types such as PN2222A without reversing supply polarity and signal logic. Its complementary NPN counterpart is PN2222A, which shares identical voltage/current ratings and package options but opposite carrier polarity and biasing requirements. Swapping them without schematic revision will prevent circuit operation.

Is PN2907A_J61Z suitable for switching inductive loads like solenoids?

Yes, PN2907A_J61Z is commonly used to switch inductive loads including solenoids, provided external flyback protection (e.g., a reverse-biased diode across the coil) is implemented. Its −60 V VCEO rating provides sufficient margin against inductive kickback in 24 V systems, and its 100 ns turn-off time ensures clean commutation at PWM frequencies up to 500 kHz.