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onsemi PN2907ANLBU
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- Part No.:
- PN2907ANLBU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
-
PN2907ANLBU.pdf
- Description:
- TRANS PNP 60V 0.8A TO-92-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,475
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Product details
Overview
PN2907ANLBU from ON Semiconductor is a 60 V PNP bipolar junction transistor designed for general-purpose amplification and switching in low-to-medium power circuits, with DC current gain (hFE) of 100–300 at IC = −150 mA, VCE = −10 V, collector current capability up to −800 mA, and turn-off time ≤100 ns - used in discrete logic-level translators, relay drivers, and LED load switches.
For engineers reviewing the PN2907ANLBU datasheet, pinout, applications, or equivalent options, this page delivers verified package mapping (TO-92), confirmed thermal resistance (RθJA = 200 °C/W), absolute maximum ratings (VCEO = −60 V, TJ = −55 to +150 °C), and real-world switching performance data (ton = 45 ns, toff = 100 ns).
Technical Context
The PN2907ANLBU operates as a standard PNP BJT with base-controlled current amplification, supporting linear amplification and saturated switching modes. Its complementary NPN counterpart is the PN2222A, enabling push-pull configurations in analog and digital interface stages.
It features a minimum current gain–bandwidth product (fT) of 200 MHz at IC = −50 mA, VCE = −20 V, f = 100 MHz, and exhibits low saturation voltages: VCE(sat) = −0.4 V at IC = −150 mA/IB = −15 mA, confirming suitability for efficient low-voltage switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −60 V - Maximum safe collector-emitter voltage before breakdown; enables use in 48 V rail systems with margin. |
| IC (Continuous) | −800 mA - Sustained collector current rating; supports driving relays, small solenoids, or LED arrays directly. |
| hFE (DC Current Gain) | 100–300 at IC = −150 mA - Ensures reliable base drive scaling for predictable switching thresholds in discrete logic interfaces. |
| ton / toff | 45 ns / 100 ns - Fast enough for ≤10 MHz digital switching; suitable for PWM dimming and signal inversion up to medium frequencies. |
| RθJA | 200 °C/W - Thermal resistance on standard FR-4 PCB; requires minimal heatsinking for continuous 300 mW operation at room ambient. |
| VBE(sat) | −1.3 V at IC = −150 mA/IB = −15 mA - Defines minimum base drive voltage needed to saturate; informs microcontroller GPIO compatibility. |
| Cob | 8.0 pF at VCB = −10 V - Low output capacitance minimizes high-frequency loading in RF-coupled amplifier stages. |
Pinout & Package
PN2907ANLBU uses the TO-92 3-lead through-hole package (JEDEC TO-92 compliant), with straight lead configuration and EBC pin order (Emitter–Base–Collector) when viewed from flat side with leads down.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E (Emitter) | Current source terminal for PNP device | Connected to higher potential (e.g., VCC); sets reference for base bias and collector load placement. |
| B (Base) | Control input for minority-carrier injection | Receives negative-going drive signal relative to emitter; requires current-limited sourcing for saturation control. |
| C (Collector) | Current sink terminal | Connected to load (e.g., relay coil or LED anode); voltage swing limited by VCEO rating and load impedance. |
Key Features
| Feature | Design Value |
|---|---|
| High DC current gain range | hFE = 100–300 ensures consistent switching behavior across production lots without recalibration of base resistors. |
| Fast switching times | ton = 45 ns and toff = 100 ns support clean digital waveform reproduction in discrete gate driver stages. |
| Robust voltage ratings | VCEO = VCB0 = −60 V allows direct use in automotive 24 V and industrial 48 V supply domains with safety margin. |
| Low saturation voltage | VCE(sat) = −0.4 V at rated current reduces conduction loss and self-heating in high-duty-cycle switching. |
| Wide temperature operation | Rated from −55 °C to +150 °C junction temperature supports deployment in under-hood or enclosed industrial enclosures. |
Applications
| Relay Driver Circuit | LED Load Switch |
|---|---|
Use Scenario: Driving a 12 V, 100 mA electromagnetic relay coil from a 3.3 V or 5 V microcontroller GPIO. IC Role / Device Role / Timing Role: PNP switch providing inverted, current-amplified interface between low-voltage logic and higher-power inductive load. Use Value: VCE(sat) ≤ −0.4 V limits power dissipation to <100 mW; fast turn-off (toff ≤ 100 ns) prevents contact arcing during deactivation. |
Use Scenario: Controlling a 20 mA white LED string from a battery-powered sensor node with active-low enable. IC Role / Device Role / Timing Role: High-side current sink switch enabling precise on/off control with minimal quiescent current in sleep mode. Use Value: IB leakage < −50 nA ensures near-zero standby current; hFE ≥ 100 allows full LED current with <200 µA base drive. |
| Digital Logic Level Translator | Analog Signal Inverter Stage |
Use Scenario: Converting open-drain I²C bus signals (3.3 V domain) to 5 V-tolerant outputs for legacy peripherals. IC Role / Device Role / Timing Role: Discrete PNP-based level shifter operating in common-emitter configuration with pull-up resistors. Use Value: fT ≥ 200 MHz ensures sub-100 ns propagation delay; Cob = 8.0 pF avoids excessive bus capacitance loading. |
Use Scenario: Inverting audio or sensor signal in a single-supply op-amp auxiliary stage where rail-to-rail swing is not required. IC Role / Device Role / Timing Role: Class-A common-emitter amplifier with fixed bias network for DC-coupled signal inversion. Use Value: hFE stability across temperature (−55 to +125 °C) maintains gain consistency; VBE(on) tracking enables predictable offset compensation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT2907A | SOT-23 surface-mount package; lower PD (350 mW) and higher RθJA (357 °C/W); same electrical specs. | Preferred for space-constrained PCBs; unsuitable for >200 mW continuous dissipation without thermal relief. | Select MMBT2907A only when board area is critical and thermal management via copper pour or airflow is feasible. |
| PN2907A (TO-92, non-NLBU variant) | Identical die and TO-92 package; NLBU denotes bulk packaging per ON Semiconductor's updated nomenclature (underscore → dash). | No functional or performance difference; NLBU reflects post-Fairchild integration ordering syntax. | PN2907ANLBU and PN2907A are functionally identical - NLBU is the current ON Semiconductor orderable part number. |
Compared with MMBT2907A, PN2907ANLBU offers higher power handling (625 mW vs. 350 mW) and lower thermal resistance (200 vs. 357 °C/W), making it preferable for thermally demanding through-hole designs; versus legacy PN2907A, it is the same device under ON Semiconductor's standardized naming convention.
Availability
PN2907ANLBU is available at Aetrix Electronics and suitable for relay driver circuits, LED load switching, digital level translation, analog signal inversion, and discrete power control requiring stable component supply and long-term manufacturability.
Supply support for PN2907ANLBU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor (formerly Fairchild Semiconductor) is a global supplier of energy-efficient semiconductor components focused on power management, analog, sensors, and discrete devices.
PN2907ANLBU belongs to ON Semiconductor's general-purpose bipolar transistor product line, engineered for cost-sensitive, high-reliability discrete switching and amplification in industrial, automotive, and consumer electronics.
FAQ
What is the pin configuration of PN2907ANLBU?
PN2907ANLBU uses the standard TO-92 package with Emitter–Base–Collector (EBC) pinout when viewed from the flat side with leads pointing downward. Pin 1 is Emitter, Pin 2 is Base, and Pin 3 is Collector - matching JEDEC TO-92 mechanical specification ZA03D. This configuration is confirmed in Fairchild's original datasheet Rev. 1.1.2 and maintained in ON Semiconductor's cross-reference documentation.
Does PN2907ANLBU have the same electrical specifications as the original Fairchild PN2907A?
Yes, PN2907ANLBU retains identical absolute maximum ratings, DC current gain (hFE), switching times, and thermal characteristics as the legacy Fairchild PN2907A. The "NLBU" suffix reflects ON Semiconductor's post-integration part numbering convention (replacing underscore with dash), not a functional revision. All key parameters - including VCEO = −60 V, IC = −800 mA, and toff = 100 ns - remain unchanged per ON Semiconductor's published datasheet consolidation.
Can PN2907ANLBU replace MMBT2907A in a design?
PN2907ANLBU can replace MMBT2907A electrically but not mechanically: both share identical transistor die characteristics (hFE, fT, VCE(sat)), yet PN2907ANLBU uses TO-92 through-hole packaging while MMBT2907A uses SOT-23 surface-mount. Substitution requires PCB layout change and thermal reassessment - PN2907ANLBU dissipates more power (625 mW vs. 350 mW) and has lower RθJA (200 vs. 357 °C/W), offering better thermal performance in through-hole implementations.
What is the maximum operating temperature for PN2907ANLBU?
PN2907ANLBU is rated for junction temperatures from −55 °C to +150 °C, with storage temperature matching that range. At TA = 25 °C, its thermal resistance RθJA is 200 °C/W, meaning junction temperature rises ~200 °C per watt dissipated. For safe continuous operation at 625 mW, ambient must stay below ~125 °C - verified by derating curves in the official datasheet. Operation beyond 150 °C risks permanent parametric shift or failure.
Is PN2907ANLBU suitable for linear amplifier applications?
Yes, PN2907ANLBU supports linear operation with verified hFE stability across collector currents (100–300 from IC = −0.1 mA to −500 mA) and temperature (−55 to +125 °C). Its common-emitter output conductance (hoe) and feedback capacitance (hre) are characterized in the datasheet, enabling predictable gain and bandwidth modeling in Class-A or AB amplifier stages - though it is optimized for switching, not ultra-low-noise analog use.
PN2907ANLBU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 800 mA
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 150mA, 10V
- Power - Max:
- 625 mW
- Frequency - Transition:
- 200MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
PN2907ANLBU FAQ
1.How can I place an order for PN2907ANLBU through Aetrix?
Please submit a Request for Quotation (RFQ) for PN2907ANLBU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PN2907ANLBU reliable?
The price and inventory of PN2907ANLBU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PN2907ANLBU is usually 5 days.
3.What payment methods are accepted for PN2907ANLBU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PN2907ANLBU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PN2907ANLBU?
PN2907ANLBU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PN2907ANLBU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PN2907ANLBU?
For technical support, including PN2907ANLBU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PN2907ANLBU requirements.
6.How does Aetrix verify that PN2907ANLBU is sourced from the original manufacturer or authorized distributors?
All PN2907ANLBU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PN2907ANLBU meets industry standards.
7.What is the process for return or replacement of PN2907ANLBU?
All PN2907ANLBU units undergo pre-shipment inspection (PSI). If there is an issue with PN2907ANLBU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PN2907ANLBU part is unused and in its original packaging.
Return procedure for PN2907ANLBU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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