onsemi PN2907TAR

Overview

PN2907TAR from Fairchild Semiconductor is a PNP general-purpose bipolar junction transistor (BJT) designed for amplification and switching applications up to 500 mA collector current. It features V_CEO = 60 V, V_CBO = 60 V, V_EBO = 5.0 V, continuous I_C = 800 mA, and operates across –55°C to +150°C junction temperature range. It is commonly used in low-voltage power switching, signal inversion, and discrete logic interface circuits.

For engineers reviewing the PN2907TAR datasheet, pinout, applications, or equivalent options, key selection considerations include its TO-92 package configuration, verified DC current gain (h_FE = 75–300 at I_C = 0.1–500 mA), saturation voltage performance (V_CE(sat) ≤ 0.4 V at I_C = 150 mA / I_B = 15 mA), and thermal resistance (R_θJA = 200°C/W on FR-4 PCB).

Technical Context

This device implements a silicon planar epitaxial PNP BJT structure optimized for general-purpose linear amplification and saturated switching. Its design supports stable h_FE over wide current ranges (0.1 mA to 500 mA) and exhibits predictable saturation behavior with V_CE(sat) and V_BE(sat) specified at multiple operating points.

Switching performance is characterized by t_on = 45 ns, t_off = 100 ns, and t_s = 80 ns under defined test conditions (V_CC = 30 V/6.0 V, I_C = 150 mA, I_B1 = I_B2 = 15 mA), confirming suitability for medium-speed digital switching and analog signal conditioning where gain-bandwidth product f_T = 200 MHz is relevant.

Key Specifications

Pinout & Package

PN2907TAR is housed in a TO-92 plastic package with standardized lead configuration: Emitter (E), Base (B), Collector (C) arranged left-to-right when viewing the flat side with leads downward. The package is through-hole mountable and compatible with standard PCB hole patterns for radial-leaded discrete transistors.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Compared with PN2907TAR, MMBT2907A trades package size for reduced thermal capability, while PZT2907A enhances power handling without altering core transistor characteristics-enabling direct function replacement with mechanical redesign only.

Availability

PN2907TAR is available at Aetrix Electronics and suitable for industrial control panels, automotive body electronics, and consumer appliance power management requiring stable component supply and long-term manufacturability.

Supply support for PN2907TAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor (now part of ON Semiconductor) is a global leader in power management, analog, and discrete semiconductor solutions, with decades of expertise in BJT, MOSFET, and IGBT design.

PN2907TAR belongs to Fairchild's legacy PNP general-purpose amplifier family, engineered for cost-sensitive, high-reliability discrete switching and amplification in industrial, automotive, and consumer applications.

FAQ

What is the maximum continuous collector current rating for PN2907TAR?

The PN2907TAR has an absolute maximum continuous collector current (I_C) rating of 800 mA. However, its functional specification as a general-purpose amplifier and switch is validated up to 500 mA under standard test conditions (T_A = 25°C). At 500 mA, V_CE(sat) ≤ 1.6 V and h_FE ≥ 50, confirming stable operation within thermal limits when mounted on FR-4 PCB.

Does PN2907TAR have a documented pinout configuration for TO-92 package?

Yes, PN2907TAR uses the standard TO-92 pinout: when viewed from the flat side with leads pointing downward, the left-to-right pin order is Emitter (E), Base (B), Collector (C). This matches the PN2907A variant and is confirmed in Fairchild's packaging documentation and schematic symbols across datasheets and SPICE models.

What is the typical DC current gain (h_FE) range for PN2907TAR at different collector currents?

PN2907TAR delivers h_FE = 75 (min) at I_C = 0.1 mA, 100 (min) at I_C = 1.0–10 mA, 100 (min) at I_C = 150 mA, and 50 (min) at I_C = 500 mA-all measured at V_CE = 10 V and T_A = 25°C. This graded gain profile supports consistent biasing across low-signal and power-switching operating points.

Can PN2907TAR be used in high-frequency amplifier circuits?

Yes, PN2907TAR has a current gain–bandwidth product (f_T) of 200 MHz at I_C = 50 mA and V_CE = 20 V, making it suitable for RF pre-amplifiers, IF stages, and broadband signal conditioning up to ~50 MHz with appropriate layout and biasing. Its C_obo = 8.0 pF and C_ibo = 30 pF further support stable high-frequency operation.

How does the thermal performance of PN2907TAR compare to SMT variants like MMBT2907A?

PN2907TAR has R_θJA = 200°C/W on FR-4 PCB, significantly better than MMBT2907A's R_θJA = 357°C/W. This 44% lower thermal resistance allows PN2907TAR to sustain higher continuous power (625 mW vs. 350 mW) without external heatsinking-making it preferable for through-hole designs where thermal margin is critical.