onsemi PN3640_D27Z

Overview

PN3640_D27Z from ON Semiconductor is a PNP bipolar junction transistor optimized for high-speed saturated switching up to 100 mA, with V_CEO = −12 V, h_FE = 30–120 at I_C = −10 mA, f_T = 500 MHz, and t_on/t_off ≤ 60/75 ns. It serves as a compact, low-V_CE(sat) switch in digital logic interfaces and pulse amplification circuits.

For engineers reviewing the PN3640_D27Z datasheet, pinout, applications, or equivalent options, key selection criteria include its SOT-23 package compatibility, −0.20 V V_CE(sat) at I_C = −10 mA/I_B = −1.0 mA, thermal resistance of 556 °C/W, and guaranteed operation from −55 °C to +150 °C.

Technical Context

This device implements a planar epitaxial PNP structure fabricated on Fairchild's Process 65, enabling fast charge-carrier transit and low storage time (t_s = 20 ns). Its design targets saturated-switching applications where low saturation voltage and rapid turn-on/turn-off are critical.

Electrical behavior is characterized under pulsed conditions (≤300 μs, ≤2% duty cycle) with validated parameters including Cob = 3.5 pF at V_CB = −5 V and f_T = 500 MHz at I_C = −10 mA/V_CE = −5 V/f = 100 MHz - confirming suitability for RF-coupled switching and clock buffering.

Key Specifications

Pinout & Package

SOT-23 (TO-236AB) 3-lead surface-mount package with gull-wing leads, 1.3 mm × 2.92 mm footprint, 1.2 mm max height, and JEDEC-compliant land pattern (MA03D).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching amplifier applications.

Compared with MMBT3906LT1G and DXT3906PSQ-13, PN3640_D27Z delivers superior high-frequency performance (500 MHz f_T, 60 ns t_on) and lower V_CE(sat) at moderate currents, making it optimal for timing-critical, low-loss saturated switching where speed and efficiency are prioritized over voltage headroom.

Availability

PN3640_D27Z is available at Aetrix Electronics and suitable for logic level translation, digital output switching, and pulse amplification requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for PN3640_D27Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power and signal management solutions, with core expertise in analog, discrete, and power IC technologies.

PN3640_D27Z belongs to ON Semiconductor's legacy Fairchild PNP switching transistor product line, engineered for high-speed digital interface and pulse conditioning applications in industrial control, communications infrastructure, and consumer electronics.

FAQ

What is the absolute maximum collector-emitter voltage rating for PN3640_D27Z?

The absolute maximum collector-emitter voltage (V_CEO) for PN3640_D27Z is −12 V at T_A = 25 °C. This rating is based on a maximum junction temperature of 150 °C and applies under steady-state DC conditions. Operation beyond this voltage risks permanent device damage and is not recommended even for transient events unless explicitly validated per application requirements.

Does PN3640_D27Z support operation at elevated temperatures?

Yes, PN3640_D27Z is rated for junction and storage temperatures from −55 °C to +150 °C. Electrical characteristics such as h_FE and V_CE(sat) are specified down to −55 °C and up to +65 °C in the datasheet, with derated power dissipation above 25 °C (1.8 mW/°C). Full parametric validation across the full range must be performed by the customer's technical team.

What is the typical current gain (h_FE) of PN3640_D27Z at low collector current?

The typical DC current gain (h_FE) of PN3640_D27Z is 30–120 when tested at I_C = −10 mA and V_CE = −0.3 V. This range reflects process variation and ensures robust base drive design for saturated switching. At higher currents (I_C = −50 mA), h_FE drops to ≥20, which remains sufficient for most logic-driven switching applications.

Can PN3640_D27Z be used in RF signal paths?

PN3640_D27Z is characterized with f_T = 500 MHz at I_C = −10 mA/V_CE = −5 V/f = 100 MHz, supporting use in RF-coupled switching and low-power RF buffer stages up to ~100 MHz. However, it is not optimized for linear RF amplification; its primary design intent is saturated switching, not small-signal gain linearity.

What package type does PN3640_D27Z use, and is it RoHS compliant?

PN3640_D27Z uses the SOT-23 (TO-236AB) 3-lead surface-mount package with marking "2J". Per ON Semiconductor documentation, this device is manufactured in accordance with RoHS Directive 2011/65/EU and is lead-free, halogen-free, and compliant with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) handling requirements.