onsemi PN3642_D26Z
- Part No.:
- PN3642_D26Z
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet:
-
PN3642_D26Z.pdf
- Description:
- TRANS NPN 45V 0.5A TO-92-3
- Quantity:
- Payment:

- Shipping:

Inventory:5,120
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Product details
Overview
PN3642_D26Z from Fairchild Semiconductor is an NPN general-purpose bipolar junction transistor (BJT) designed for amplification and switching in low-to-medium power circuits, with VCEO = 45 V, IC = 500 mA continuous, hFE = 40–120 at IC = 150 mA, and TO-92 package. It serves in audio preamplifiers, relay drivers, and signal conditioning stages where moderate gain and fast turn-on are required.
For engineers reviewing the PN3642_D26Z datasheet, pinout, applications, or equivalent options, key selection criteria include its 45 V VCEO, 500 mA IC rating, 0.22 V VCE(sat) at IC/IB = 150 mA/15 mA, 8.0 pF Cob, and suitability for linear amplification up to 100 MHz.
Technical Context
This NPN BJT operates with a maximum junction temperature of 150°C and thermal resistance RθJA = 200°C/W, enabling use in ambient temperatures up to 65°C under derated power conditions. Its DC current gain hFE varies from 40 (min) at IC = 150 mA to 15 (min) at IC = 500 mA, reflecting typical gain compression at higher currents.
The device exhibits small-signal current gain hfe = 1.5 at f = 100 MHz, VCE = 5.0 V, and IC = 50 mA, and delivers 10 dB amplifier power gain (Gpe) at 30 MHz with 60% collector efficiency under matched RF conditions - confirming utility beyond DC switching into RF amplification roles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum safe collector-emitter voltage before breakdown; defines upper rail limit in amplifier or switch designs. |
| IC (continuous) | 500 mA - Continuous collector current handling; supports relay coils, LED arrays, and medium-power analog stages. |
| hFE (min–max) | 40–120 - DC current gain range at VCE = 10 V; determines base drive requirements and bias stability. |
| VCE(sat) | 0.22 V - Saturation voltage at IC/IB = 150 mA/15 mA; enables low-loss switching with <100 mW dissipation at full load. |
| Cob | 8.0 pF - Output capacitance at VCB = 10 V, f = 140 kHz; impacts high-frequency response and Miller effect in amplifier layouts. |
| PD (TA = 25°C) | 625 mW - Total power dissipation limit; requires heatsinking or derating above 25°C ambient per 5.0 mW/°C slope. |
| fT (est.) | ≥100 MHz - Estimated transition frequency based on hfe = 1.5 at 100 MHz; validates use in VHF preamp and oscillator applications. |
Pinout & Package
PN3642_D26Z is housed in a standard through-hole TO-92 package (3-lead, epoxy molded), with lead spacing matching JEDEC TO-92 outline. The package provides adequate thermal performance for low-duty-cycle or thermally managed PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal | Reference node for bias network; connects to ground or negative rail in common-emitter configurations. |
| 2 (Base) | Control input | Accepts current-limited drive (e.g., via 1–10 kΩ resistor); governs conduction state and gain linearity. |
| 3 (Collector) | Current source terminal | Connects to load and positive supply; carries amplified output current with minimal saturation loss. |
Key Features
| Feature | Design Value |
|---|---|
| NPN bipolar junction structure | Enables standard common-emitter amplifier topology with predictable gain and phase response. |
| Low VCE(sat) (0.22 V) | Reduces conduction losses in switching applications, improving efficiency in battery-powered drivers. |
| High hFE range (40–120) | Allows flexible base bias design across production lots without active feedback compensation. |
| RF-capable small-signal gain | Supports broadband amplification up to 100 MHz, validated by hfe = 1.5 and Gpe = 10 dB at 30 MHz. |
| TO-92 mechanical compatibility | Ensures drop-in replacement in legacy through-hole designs using standard 0.1" pitch PCB footprints. |
Applications
| Audio Preamplifier Stage | DC Relay Driver |
|---|---|
Use Scenario: Low-noise voltage amplification of microphone or sensor signals prior to ADC sampling. IC Role / Device Role / Timing Role: NPN BJT configured in common-emitter mode with emitter degeneration for stable gain and bandwidth control. Use Value: Delivers 40–120 hFE and 8.0 pF Cob, enabling clean 20 Hz–20 kHz response with minimal distortion and thermal drift. | Use Scenario: Driving 12 V, 200 mA coil relays in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Switching element operating in saturation region with fixed base current limiting. Use Value: Achieves 0.22 V VCE(sat) at 150 mA, limiting relay driver dissipation to <33 mW and eliminating need for heat sinking. |
| RF Oscillator Core | Linear Current Source |
Use Scenario: Colpitts or Hartley oscillator stage generating 30 MHz local oscillator signals. IC Role / Device Role / Timing Role: Active gain element sustaining oscillation via tuned LC tank feedback. Use Value: Provides 10 dB Gpe and 60% η at 30 MHz, ensuring reliable start-up and amplitude stability under supply variation. | Use Scenario: Constant-current sink for LED biasing or precision reference current generation. IC Role / Device Role / Timing Role: Emitter-follower configured with base voltage regulation and emitter resistor feedback. Use Value: Leverages tight hFE spread and low VBE drift to maintain ±3% current accuracy over –40°C to +85°C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose amplifier and switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT3904LT1G | SMD SOT-23 package; lower IC = 200 mA; hFE = 100–300 at IC = 10 mA; VCEO = 40 V. | Not suitable for 500 mA loads; better for high-density PCBs and low-current digital logic interfacing. | Select when board space is constrained and load current ≤200 mA; verify layout thermal relief for SMT reflow. |
| BC547B | TO-92; same pinout; VCEO = 45 V; IC = 100 mA; hFE = 200–450 at IC = 2 mA. | Higher gain at low current but limited to 100 mA continuous; unsuitable for >200 mA switching. | Prefer for low-power analog gain stages only; avoid in relay or LED array drivers requiring >150 mA. |
Compared with MMBT3904LT1G and BC547B, PN3642_D26Z uniquely balances 500 mA IC, 45 V VCEO, and TO-92 through-hole compatibility - making it optimal for legacy industrial controls and medium-power linear circuits where SMT conversion is not feasible.
Availability
PN3642_D26Z is available at Aetrix Electronics and suitable for audio preamplifiers, relay drivers, and RF oscillator circuits requiring stable component supply and long-term obsolescence management.
Supply support for PN3642_D26Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.
PN3642_D26Z belongs to Fairchild's legacy general-purpose BJT product line, engineered for cost-sensitive, reliability-critical linear and switching applications in industrial, consumer, and communications equipment.
FAQ
What is the maximum continuous collector current rating for PN3642_D26Z?
PN3642_D26Z has a maximum continuous collector current (IC) rating of 500 mA at TA = 25°C. This value decreases with rising ambient temperature due to thermal derating at 5.0 mW/°C above 25°C, and operation must remain within the 625 mW total power dissipation limit. PN3642_D26Z is rated for sustained 500 mA loads only when adequately heatsinked or operated in controlled thermal environments.
Does PN3642_D26Z support RF amplification applications?
Yes, PN3642_D26Z supports RF amplification up to 100 MHz, evidenced by its hfe = 1.5 at f = 100 MHz and verified 10 dB amplifier power gain (Gpe) at 30 MHz. PN3642_D26Z achieves 60% collector efficiency under matched RF conditions, confirming suitability for VHF oscillator and low-power RF amplifier stages when properly biased and impedance-matched.
What is the pin configuration of PN3642_D26Z in the TO-92 package?
PN3642_D26Z uses the standard TO-92 pinout: Pin 1 is Emitter, Pin 2 is Base, and Pin 3 is Collector - with leads arranged left-to-right when viewing the flat side of the package with leads pointing downward. PN3642_D26Z maintains full mechanical and electrical compatibility with JEDEC TO-92 footprint dimensions, including 1.27 mm lead spacing and 3.60 mm body width.
Is PN3642_D26Z suitable for switching 12 V relay coils?
Yes, PN3642_D26Z is well-suited for switching 12 V relay coils drawing up to 500 mA. With VCE(sat) = 0.22 V at IC/IB = 150 mA/15 mA, PN3642_D26Z limits power loss to under 33 mW in saturation, eliminating need for heatsinking in typical industrial relay driver designs operating at ambient temperatures ≤65°C.
What is the operating junction temperature range for PN3642_D26Z?
PN3642_D26Z has a specified operating and storage junction temperature range of –55°C to +150°C, with absolute maximum ratings based on a 150°C junction limit. Thermal resistance RθJA = 200°C/W means that at 25°C ambient and 625 mW dissipation, junction temperature reaches exactly 150°C - so real-world use requires derating or thermal management to stay within safe limits. PN3642_D26Z must be operated below this threshold to ensure long-term reliability.
PN3642_D26Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 45 V
- Vce Saturation (Max) @ Ib, Ic:
- 220mV @ 15mA, 150mA
- Current - Collector Cutoff (Max):
- 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 150mA, 10V
- Power - Max:
- 625 mW
- Frequency - Transition:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
PN3642_D26Z FAQ
1.How can I place an order for PN3642_D26Z through Aetrix?
Please submit a Request for Quotation (RFQ) for PN3642_D26Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PN3642_D26Z reliable?
The price and inventory of PN3642_D26Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PN3642_D26Z is usually 5 days.
3.What payment methods are accepted for PN3642_D26Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PN3642_D26Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PN3642_D26Z?
PN3642_D26Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PN3642_D26Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PN3642_D26Z?
For technical support, including PN3642_D26Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PN3642_D26Z requirements.
6.How does Aetrix verify that PN3642_D26Z is sourced from the original manufacturer or authorized distributors?
All PN3642_D26Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PN3642_D26Z meets industry standards.
7.What is the process for return or replacement of PN3642_D26Z?
All PN3642_D26Z units undergo pre-shipment inspection (PSI). If there is an issue with PN3642_D26Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PN3642_D26Z part is unused and in its original packaging.
Return procedure for PN3642_D26Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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