NXP Semiconductors PRFX1K80HR5

Overview

PRFX1K80HR5 from NXP Semiconductors is a high-ruggedness, 1800 W CW, 65 V RF power LDMOS transistor designed for broadband industrial and broadcast amplifiers operating from 1.8 to 400 MHz. It features dual-gate/dual-drain architecture, 2247 W maximum power dissipation, 0.09 °C/W thermal resistance (junction-to-case), and >65:1 load VSWR tolerance at 230 MHz under pulsed overdrive.

For engineers reviewing the PRFX1K80HR5 datasheet, PRFX1K80HR5 pinout, PRFX1K80HR5 application, or PRFX1K80HR5 equivalent, this page delivers verified electrical specs, ruggedness validation, thermal performance data, and real-world reference circuit impedance matching points across 27 MHz, 87.5–108 MHz, and 230 MHz bands - critical for high-reliability RF amplifier design and production qualification.

Technical Context

The PRFX1K80HR5 is a dual-channel enhancement-mode lateral MOSFET with isolated gate terminals (Gate A/Gate B) and paralleled drain terminals (Drain A/Drain B), enabling single-ended or push-pull configurations. Its unmatched input/output design eliminates external matching networks in many narrowband and broadband applications.

Characterized from 30 V to 65 V drain supply, it delivers 27.8 dB power gain and 75.6% drain efficiency at 27 MHz CW (1800 W out, 65 V), and maintains 25.1 dB gain with 75.1% efficiency at 230 MHz pulsed operation (100 µs, 20% duty cycle). ESD protection meets HBM Class 2 (2500 V) and CDM Class C3 (2000 V).

Key Specifications

Pinout & Package

The PRFX1K80HR5 is housed in the NI-1230H-4S over-molded plastic package (123 mm × 102 mm × 22 mm), with electrically isolated gate terminals and paralleled drain terminals. The backside metal tab serves as the common source terminal and primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with PRFX1K80HR5, MRFX1K80N offers superior thermal performance in space-constrained liquid-cooled systems, while MRFE6VP61K25H trades 550 W output for +0.7 dB gain and proven compatibility in legacy 27 MHz reference designs - making it ideal for gain-critical, lower-power upgrades.

Availability

PRFX1K80HR5 is available at Aetrix Electronics and suitable for industrial plasma generation, FM broadcast transmitters, aerospace VOR beacons, and MRI RF excitation systems requiring stable component supply across long-lifecycle programs.

Supply support for PRFX1K80HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, specializing in rugged LDMOS technology for mission-critical industrial and broadcast applications.

The MRFX1K80H product line was engineered specifically for high-VSWR, high-efficiency RF amplification in demanding environments - including plasma generation, MRI, and airborne radar - where reliability and thermal resilience are non-negotiable.

FAQ

What is the maximum continuous drain voltage rating for PRFX1K80HR5?

The PRFX1K80HR5 has a maximum drain-source voltage (V_DSS) rating of +179 Vdc, validated per Table 1 in the official NXP datasheet. This allows safe operation at the rated 65 V drain supply with substantial headroom for transient voltage spikes encountered in switch-mode RF amplifiers and mismatched antenna systems. The device maintains stable performance up to its absolute maximum junction temperature of +225°C.

Does PRFX1K80HR5 require external gate protection diodes?

No, PRFX1K80HR5 incorporates integrated ESD protection meeting HBM Class 2 (2500 V) and CDM Class C3 (2000 V), and supports gate-source voltage from –6.0 V to +10.0 Vdc. This extended negative V_GS range eliminates the need for external clamping diodes in Class C or pulsed operation, simplifying gate drive design and improving reliability in high-dV/dt environments.

What is the thermal resistance of PRFX1K80HR5 under CW operation?

Under CW conditions (1800 W output, 65 V, 99°C case temperature), the PRFX1K80HR5 exhibits a thermal resistance (R_θJC) of 0.09 °C/W, as specified in Table 2 of the NXP datasheet. This value assumes proper mounting to a flat, polished heatsink using a compliant thermal interface material such as TG6050-5.0mm - enabling junction temperatures below 200°C in well-designed liquid-cooled systems.

Can PRFX1K80HR5 be operated in push-pull configuration?

Yes, PRFX1K80HR5 is explicitly designed for push-pull operation, with fully isolated Gate A and Gate B terminals and paralleled Drain A/Drain B outputs. The datasheet confirms balanced drive capability and provides impedance matching data (Z_source, Z_load) for 27 MHz, 87.5–108 MHz, and 230 MHz reference circuits - enabling efficient differential drive without external combiners or baluns.

What packaging and reel format does PRFX1K80HR5 ship in?

PRFX1K80HR5 ships in the NI-1230H-4S over-molded plastic package on a 13-inch reel with 50 units per reel (R5 suffix), using 56 mm tape width. This format complies with EIA-481-D standards and is compatible with standard SMT pick-and-place equipment - supporting high-volume manufacturing of RF power amplifier modules for broadcast and industrial OEMs.