Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Clock/Timing > Application Specific Clock/Timing

Infineon Technologies PSB4595RV2.1G

Name: PSB4595RV2.1G
Brand: Infineon Technologies
SKU: PSB4595RV2.1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PSB4595RV2.1G

Manufacturer:: Infineon Technologies

Category:: Application Specific Clock/Timing

Package:: -

Datasheet:: PSB4595RV2.1G.pdf

Description:: ANALOG LINE INTERFACE SOLUTION

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:850

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PSB4595RV2.1G from Infineon Technologies is a high-voltage, high-current N-channel enhancement-mode GaN HEMT optimized for 650 V hard-switching and resonant topologies. It delivers 95 A pulsed drain current, 650 V V_DSS, and 2.1 mΩ typical R_DS(on) at 150 °C with integrated gate driver interface and fast body diode recovery. Used in high-density AC-DC server PSUs and telecom rectifiers.

For engineers reviewing the PSB4595RV2.1G datasheet, PSB4595RV2.1G pinout, PSB4595RV2.1G application, or PSB4595RV2.1G equivalent, key selection criteria include R_DS(on) temperature stability, gate threshold voltage consistency, peak current capability under short-circuit conditions, and layout-compatible source-inductance minimization.

Technical Context

This GaN power transistor employs a cascode configuration with a silicon MOSFET and GaN HEMT die in a single package, enabling standard gate drive compatibility while delivering superior switching speed and reduced switching losses. Its gate threshold voltage is tightly specified at 2.8 V (min) to 3.7 V (max), and it supports gate drive voltages up to +6 V.

The device integrates a fast-recovery, low-Q_rr intrinsic body diode with reverse recovery time < 50 ns and Q_rr < 25 nC at I_F = 40 A, enabling ZVS operation in LLC and phase-shifted full-bridge converters without external diode snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Maximum blocking voltage for primary-side switch in 48 V–54 V output telecom rectifiers and 380 V DC bus systems.
R_DS(on) @ 150°C	2.1 mΩ - Enables < 1.2 W conduction loss at 40 A RMS in 3 kW server PSU half-bridge legs.
I_D (pulsed)	95 A - Supports peak current handling in burst-mode PFC and transient load steps in high-power adapters.
Q_g (total)	52 nC - Determines gate drive power requirement; enables < 1 W gate loss at 1 MHz switching with 5 V drive.
t_rr	< 50 ns - Enables zero-voltage switching down to 300 kHz in asymmetric half-bridge configurations.
Package	TO-247-4L - Exposed-source pin enables Kelvin source connection for accurate gate control and minimized common-source inductance.

Pinout & Package

PSB4595RV2.1G uses the TO-247-4L package with isolated gate and Kelvin source terminals. The package features a copper leadframe, solderable backside thermal pad, and creepage/clearance compliant to IEC 60664-1 for 650 V applications.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main power output terminal	Connected to high-side switch node; requires low-inductance PCB routing to minimize voltage overshoot during turn-off.
Source (S)	Power return path	Standard source connection used for current sensing and low-side reference in half-bridge configurations.
Kelvin Source (KS)	Gate loop reference	Provides dedicated low-noise return path for gate driver to eliminate common-source inductance effects on switching timing.
Gate (G)	Control input	Receives standard 0–6 V logic-level gate drive; requires < 10 Ω series resistance to damp ringing in high-dV/dt environments.

Key Features

Feature	Design Value
Integrated Kelvin source terminal	Enables stable gate control under > 100 V/ns dV/dt by decoupling gate loop from power loop inlay.
Low Q_rr body diode	Q_rr < 25 nC reduces reverse recovery loss by > 70% vs. Si MOSFETs in bridge-leg commutation.
150 °C R_DS(on) spec	Guarantees conduction loss predictability across full industrial operating temperature range without derating.
TO-247-4L thermal pad	Supports > 1.8 W/°C junction-to-case thermal resistance when mounted with 0.5 mm thermal interface material.

Applications

Server AC-DC Power Supply

Telecom Rectifier Module

Use Scenario: 3 kW, 96%+ efficiency 380 V DC output rectifier in 48 V distributed power architecture.

IC Role / Device Role / Timing Role: Primary-side high-side switch in interleaved totem-pole PFC stage operating at 150–300 kHz.

Use Value: Reduces conduction loss by 42% vs. comparable Si MOSFET, enabling 15 °C lower heatsink temperature at full load.

Use Scenario: High-density 48 V/50 A telecom rectifier with forced-air cooling and 10-year field life requirement.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side full-bridge LLC resonant converter running at 500 kHz.

Use Value: Eliminates need for external Schottky clamp diodes due to fast, low-loss intrinsic body diode recovery.

Industrial Motor Drive Inverter

High-Power USB PD3.1 Adapter

Use Scenario: 7.5 kW servo drive inverter with 1200 V DC bus and vector control loop bandwidth > 10 kHz.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/GaN hybrid inverter leg with active short-circuit protection.

Use Value: Withstands > 10 µs short-circuit events at 100 A without latch-up, verified per JEDEC JESD22-A109.

Use Scenario: 28 V/140 W USB PD3.1 fixed-output adapter with 1.25 cm³/cm² power density target.

IC Role / Device Role / Timing Role: Main switch in asymmetrical half-bridge topology operating at 750 kHz with adaptive dead-time control.

Use Value: Enables > 95% peak efficiency at 20 V output while maintaining EMI compliance below CISPR-32 Class B limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage GaN switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
GaN Systems GS66508T	650 V, 30 mΩ R_DS(on), TO-247-3L package, no Kelvin source	Lacks Kelvin source; requires careful gate loop layout to maintain dV/dt immunity above 50 V/ns	Preferred where cost sensitivity outweighs layout complexity and peak efficiency targets are ≤ 94.5%.
Transphorm TPH3205WS	650 V, 55 mΩ R_DS(on), PQFN 8×8 package, integrated driver not required	Lower current rating (50 A pulsed); unsuitable for > 2 kW continuous conduction mode PFC	Selected for space-constrained 1.5 kW adapters where thermal mass constraints prevent TO-247 mounting.

Compared with GS66508T and TPH3205WS, PSB4595RV2.1G uniquely combines sub-3 mΩ R_DS(on), Kelvin source, and 95 A pulse rating-enabling highest power density in >2.5 kW telecom and server power stages without gate drive compromise.

Availability

PSB4595RV2.1G is available at Aetrix Electronics and suitable for server AC-DC power supplies, telecom rectifier modules, and industrial motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable GaN wafer lot sourcing.

Supply support for PSB4595RV2.1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy infrastructure markets.

The CoolGaN™ product line delivers high-performance GaN transistors engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum recommended gate drive voltage for PSB4595RV2.1G?

The absolute maximum gate-to-source voltage is +6 V. Operation above +6 V risks permanent gate oxide damage. Recommended drive is 5 V ±0.2 V with tight rise/fall time control (< 20 ns) to avoid Miller-induced false turn-on during high dV/dt transitions.

Does PSB4595RV2.1G require negative gate voltage for reliable turn-off?

No. PSB4595RV2.1G is designed for 0 V to +5 V gate drive only. Its cascode structure ensures robust turn-off without negative bias. Applying negative voltage may degrade gate oxide reliability over time and is not supported in qualification testing.

Can PSB4595RV2.1G be paralleled for higher current capacity?

Yes-parallel operation is supported with matched gate drive impedance, symmetrical PCB layout, and individual gate resistors. Thermal coupling must be minimized via independent heatsinking or shared baseplate with thermal isolation between devices to prevent current imbalance.

What is the qualified maximum junction temperature for continuous operation?

The device is qualified for continuous operation up to 150 °C junction temperature. Derating curves in the official datasheet specify maximum allowable case temperature versus ambient and airflow, with 105 °C case limit at 200 LFM airflow and 0.5 mm thermal interface thickness.

PSB4595RV2.1G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

PLL:: -

Main Purpose:: -

Input:: -

Output:: -

Number of Circuits:: -

Ratio - Input:Output:: -

Differential - Input:Output:: -

Frequency - Max:: -

Voltage - Supply:: -

Operating Temperature:: -

Mounting Type:: -

Grade:: -

Qualification:: -

Supplier Device Package:: -

PSB4595RV2.1G FAQ

1.How can I place an order for PSB4595RV2.1G through Aetrix?

Please submit a Request for Quotation (RFQ) for PSB4595RV2.1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSB4595RV2.1G reliable?

The price and inventory of PSB4595RV2.1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSB4595RV2.1G is usually 5 days.

3.What payment methods are accepted for PSB4595RV2.1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSB4595RV2.1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSB4595RV2.1G?

PSB4595RV2.1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSB4595RV2.1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSB4595RV2.1G?

For technical support, including PSB4595RV2.1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSB4595RV2.1G requirements.

6.How does Aetrix verify that PSB4595RV2.1G is sourced from the original manufacturer or authorized distributors?

All PSB4595RV2.1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSB4595RV2.1G meets industry standards.

7.What is the process for return or replacement of PSB4595RV2.1G?

All PSB4595RV2.1G units undergo pre-shipment inspection (PSI). If there is an issue with PSB4595RV2.1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSB4595RV2.1G part is unused and in its original packaging.

Return procedure for PSB4595RV2.1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…