Diodes Incorporated PT7M8216B30XYE

Overview

PT7M8216B30XYE from Pericom Semiconductor is a 300mA, high-PSRR low-dropout regulator with fixed 3.0V output, 150mV dropout at 150mA, ±2% initial accuracy, and stable operation with 0.47µF ceramic capacitors. It features auto output discharge, thermal shutdown, current limit protection, and operates across –40°C to +85°C in ultra-compact UDFN-4 (0.8mm×0.8mm) packaging - ideal for space-constrained mobile power rails.

For engineers reviewing the PT7M8216B30XYE datasheet, PT7M8216B30XYE pinout, PT7M8216B30XYE application, or PT7M8216B30XYE equivalent, key selection criteria include guaranteed 300mA load capability under 1.7–5.5V input, 75dB PSRR at 1kHz, 36µA quiescent current, EN-controlled on/off sequencing, and compatibility with low-ESR ceramic output caps in portable RF and baseband subsystems.

Technical Context

The PT7M8216B30XYE integrates a P-channel MOSFET pass element, precision bandgap reference, error amplifier with internal phase compensation, and enable-controlled logic circuitry. Its architecture enables stable regulation with minimal external components while maintaining tight output voltage accuracy over temperature and load.

It delivers high ripple rejection via optimized internal feedback loop dynamics and achieves fast transient response through low-output-impedance design and integrated auto-discharge path. The EN pin directly controls the pass transistor gate drive, enabling clean power sequencing without external pull-up resistors.

Key Specifications

Pinout & Package

PT7M8216B30XYE is housed in a lead-free, green-compliant 4-pin UDFN package measuring 0.8mm × 0.8mm with 0.48mm pitch. The exposed pad is not electrically connected and serves only as mechanical anchor and thermal relief.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with XC6219B302MR-G and RT9193-30GB, PT7M8216B30XYE uniquely combines sub-1mm² packaging, auto-discharge, and 36µA IQ - making it optimal for next-gen miniaturized wireless devices where board area, power sequencing, and standby efficiency are co-constrained.

Availability

PT7M8216B30XYE is available at Aetrix Electronics and suitable for mobile baseband power, RF front-end biasing, digital camera sensor rails, and portable audio codec supply requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for PT7M8216B30XYE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Pericom Semiconductor (now part of Diodes Incorporated) specialized in high-performance interface, timing, and power management ICs for communications, computing, and consumer electronics.

The PT7M8216 series was designed specifically for ultra-compact, low-noise power regulation in battery-powered mobile devices - emphasizing minimal footprint, low IQ, and robust transient behavior in RF-dense PCB layouts.

FAQ

What is the minimum input voltage required for stable 3.0V output at full 300mA load?

The PT7M8216B30XYE maintains regulation down to VIN = VOUT + V_DROP. At 300mA, dropout rises to ~220mV (extrapolated from 150mV @ 150mA and typical curve slope), requiring minimum VIN ≈ 3.22V. For guaranteed 300mA operation across temperature and process variation, use VIN ≥ 3.3V.

Can the NC pin (Pin 5) be left floating without affecting performance?

Yes - the NC pin is internally unconnected and may be left floating per the datasheet. However, tying it to GND improves mechanical reliability during reflow and reduces potential EMI coupling; it does not alter electrical behavior or thermal performance.

Does the 0.47µF output capacitor requirement apply to both X5R and X7R dielectrics?

Yes - the datasheet explicitly specifies X5R or X7R ceramic capacitors due to their stable capacitance vs. DC bias and temperature. Y5V or Z5U types exhibit excessive capacitance loss under bias and are not supported; using them risks instability and poor transient response.

How does the auto output discharge function interact with system-level power sequencing?

When EN is pulled low, the internal 50Ω discharge path actively pulls VOUT to GND within ~1ms (typical), eliminating residual voltage that could cause latch-up or false wake events. This enables deterministic, glitch-free power-down without external discharge circuitry - critical for multi-rail SoC sequencing.