Diodes Incorporated PT7M8218B12TAE

Overview

PT7M8218B12TAE from Pericom Semiconductor is a 300mA, high-PSRR low-dropout linear regulator with 2.8V fixed output voltage, ±2% initial accuracy, 150mV dropout at 150mA, and 75dB PSRR at 1kHz - designed for power-sensitive portable RF and digital baseband circuits in mobile handsets.

For engineers reviewing the PT7M8218B12TAE datasheet, PT7M8218B12TAE pinout, PT7M8218B12TAE application, or PT7M8218B12TAE equivalent, key selection criteria include guaranteed 300mA load capability with 0.47µF ceramic output capacitance, auto output discharge, thermal shutdown at 170°C, and EN pin compatibility with 1.2V logic-high threshold.

Technical Context

The PT7M8218B12TAE integrates a P-channel MOSFET pass element, internal reference voltage source, error amplifier with phase compensation, and ON/OFF control circuitry. Its architecture enables stable regulation with ultra-low ESR ceramic capacitors and supports fast transient response under dynamic load conditions.

It features dual protection mechanisms: current limit (400mA typical) and thermal shutdown (170°C with 20°C hysteresis), plus an active-high enable input with sub-100nA standby current when disabled. The regulator operates across –40°C to +85°C ambient temperature with no external compensation required.

Key Specifications

Pinout & Package

PT7M8218B12TAE is packaged in lead-free, RoHS-compliant SOT23-5L (JEDEC MO-178C/AA) - a 2.9mm × 1.6mm surface-mount package with 0.95mm pitch, optimized for high-density portable PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with XC6206P282MR and RT9193-28GB, PT7M8218B12TAE delivers superior PSRR and integrated discharge functionality - making it optimal for RF-intensive portable designs where supply noise and power sequencing integrity are critical.

Availability

PT7M8218B12TAE is available at Aetrix Electronics and suitable for cellular transceivers, digital baseband processors, camera sensor modules, and portable audio codecs requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for PT7M8218B12TAE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Pericom Semiconductor (now part of Diodes Incorporated) specialized in high-performance interface, timing, and power management ICs for communications and consumer electronics before its 2016 acquisition.

The PT7M8218 belongs to Pericom's precision LDO family targeting battery-powered RF and mixed-signal applications - engineered for minimal noise, high PSRR, and seamless integration into space-constrained mobile platforms.

FAQ

What is the minimum input voltage required for stable 2.8V output at 300mA?

The PT7M8218B12TAE requires VIN ≥ 2.95V to maintain regulation at 300mA load, based on its 150mV dropout specification at 150mA and confirmed worst-case dropout of 180mV for VOUT ≤ 2.7V. At full 300mA, measured dropout remains below 200mV per typical performance curves, ensuring reliable operation down to 3.0V input from a single Li-ion cell.

Can the NC pin (Pin 4) be left floating in production design?

Yes - the NC pin is internally unconnected and may be left floating per manufacturer guidance; however, tying it to GND improves mechanical anchoring and reduces potential antenna effects in RF-dense layouts, especially in handheld form factors with tight spacing between high-frequency traces.

Does PT7M8218B12TAE require external compensation components?

No - the device integrates internal phase compensation optimized for stability with 0.47µF ceramic output capacitors (X5R/X7R dielectrics). Adding external RC networks or larger capacitors may degrade transient response or induce oscillation, as confirmed by the block diagram and application circuit diagrams in the official datasheet.

How does the auto output discharge function behave during EN deactivation?

When EN is pulled low, the internal 50Ω discharge path connects VOUT to GND, discharging a 0.47µF output capacitor from 2.8V to <100mV in approximately 13ms (t ≈ 3×RC). This prevents residual voltage from interfering with downstream logic reset sequences or causing latch-up in powered-down peripherals.