Diodes Incorporated PT7M8218B30CE

Overview

PT7M8218B30CE from Pericom Semiconductor is a 300mA, high-PSRR low-dropout linear regulator with ±2% output accuracy, 150mV dropout at 150mA (V_OUT=2.8V), 75dB PSRR at 1kHz, and 36µA quiescent current. It delivers stable 3.0V output from 1.7–5.5V input and supports auto output discharge - used in portable RF subsystems requiring clean, low-noise bias for GSM/CDMA transceivers and baseband ICs.

For engineers reviewing the PT7M8218B30CE datasheet, PT7M8218B30CE pinout, PT7M8218B30CE application, or PT7M8218B30CE equivalent, key selection criteria include dropout voltage under load, PSRR performance at 1kHz and 10kHz, EN pin logic polarity (high-active), thermal shutdown threshold (170°C), and compatibility with 0.47µF X5R/X7R ceramic capacitors.

Technical Context

The PT7M8218B30CE employs a P-channel MOSFET pass element controlled by an internal error amplifier and reference voltage source, enabling low dropout and fast transient response. Its integrated phase compensator ensures stability with 0.47µF ceramic output capacitors without external compensation.

It features active-high enable (EN) with 1.2V logic-high threshold and sub-1µA standby current when disabled. Protection includes foldback current limiting (400mA typical) and thermal shutdown with 20°C hysteresis, triggered at 170°C junction temperature.

Key Specifications

Pinout & Package

PT7M8218B30CE is packaged in SC70-5L (JEDEC MO-203B/AA) - a 1.2mm × 2.2mm surface-mount package with 0.65mm pitch, optimized for space-constrained mobile PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with XC6219B302MR-G and RT9013-30GB, PT7M8218B30CE offers superior PSRR (75dB vs. ≤70dB) and integrated auto-discharge - critical for noise-sensitive RF and fast-wake systems where external components add cost and footprint.

Availability

PT7M8218B30CE is available at Aetrix Electronics and suitable for mobile transceiver bias, GSM/CDMA baseband core supply, and digital camera ISP core applications requiring stable component supply across production ramps and long-lifecycle designs.

Supply support for PT7M8218B30CE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Pericom Semiconductor (now part of Diodes Incorporated) specialized in high-performance interface, timing, and power management ICs for communications and consumer electronics before its 2017 acquisition.

The PT7M8218 series targets portable wireless devices - designed specifically for low-noise, low-quiescent-current biasing of RF transceivers, baseband processors, and imaging subsystems in space-constrained layouts.

FAQ

What is the minimum input voltage required to maintain 3.0V output at 300mA load?

The PT7M8218B30CE requires VIN ≥ VOUT + VDROPOUT. At 300mA, dropout rises above the 150mV spec (measured at 150mA); typical dropout is ~220mV per load curves. Thus, minimum VIN = 3.0V + 0.22V = 3.22V. For guaranteed 300mA operation, use VIN ≥ 3.3V.

Can the NC pin (Pin 4) be left floating without affecting performance?

Yes - the NC pin is internally unconnected and may be left floating per the datasheet. However, tying it to GND improves mechanical anchoring and reduces potential antenna effects in RF-dense layouts, especially in SC70-5L's small footprint.

Does the PT7M8218B30CE require an input capacitor, and if so, what value and type?

Yes - a 0.47µF X5R or X7R ceramic capacitor is required between VIN and GND, placed within 2mm of the IC. This stabilizes the input rail against PMIC ripple and prevents oscillation due to wiring inductance, as confirmed in the application circuit and layout notes.

How does the auto output discharge function behave during EN deactivation?

When EN is pulled low, the internal 50Ω discharge path connects VOUT to GND, reducing VOUT to <0.1V within ~1.5ms (typical, depending on output capacitance). This prevents voltage hold-up that could interfere with system-level reset sequencing or cause unintended device wake-up.