Infineon Technologies PTAB182002TCV2R250XUMA1

Overview

PTAB182002TCV2R250XUMA1 from Infineon Technologies is a thermally-enhanced asymmetric Doherty LDMOS FET designed for cellular base station power amplifiers in the 1805–1880 MHz band. It delivers 70 W typical P1dB (main) and 120 W typical P1dB (peak), operates at 28 V, achieves 47% drain efficiency, and features copper flange packaging with formed leads (H-49248H-4) for high-power WCDMA and LTE macrocell applications.

For engineers reviewing the PTAB182002TCV2R250XUMA1 datasheet, PTAB182002TCV2R250XUMA1 pinout, PTAB182002TCV2R250XUMA1 application, or PTAB182002TCV2R250XUMA1 equivalent, key selection criteria include its dual-side gate/drain configuration, 0.34 °C/W thermal resistance, integrated ESD protection, and proven 3:1 VSWR tolerance under 50 W average output with WCDMA signals.

Technical Context

This device implements an asymmetric Doherty architecture with physically separate main and peak transistors on a single die-each with dedicated gate (G1/G2) and drain (D1/D2) terminals and shared source (flange). The main side is biased at IDQ = 520 mA (VGS ≈ 3.0 V), while the peak side operates near cutoff (IDQ = 0 mA, VGS ≈ 1.1 V), enabling high-efficiency back-off operation.

It is characterized in production-grade Doherty fixtures using two-carrier 3GPP WCDMA signals (3.84 MHz bandwidth, 7.5 dB PAR), delivering –27.6 dBc IMD at 29 W avg output. Its internal broadband matching eliminates external input/output matching networks across 1805–1880 MHz, and its 65 V V(BR)DSS rating supports robust operation under load mismatch conditions.

Key Specifications

Pinout & Package

PTAB182002TCV2R250XUMA1 uses the H-49248H-4 ceramic open-cavity package with formed leads and earless copper flange. The flange serves as the common source terminal and primary thermal path. Leads are gold-plated (1.14 ± 0.38 µm), and flange plating is ≤0.25 µm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asymmetric Doherty RF power transistor applications.

Compared with PD570182-E and RF3945, PTAB182002TCV2R250XUMA1 offers superior thermal performance (0.34 vs. 0.42 °C/W) and optimized efficiency specifically within the 1805–1880 MHz band-making it the preferred choice for energy-efficient, space-constrained Band 3 macrocell upgrades.

Availability

PTAB182002TCV2R250XUMA1 is available at Aetrix Electronics and suitable for macrocell base station power amplifiers, remote radio units, LTE multi-band transmitters, and high-reliability wireless infrastructure requiring stable component supply across extended product lifecycles.

Supply support for PTAB182002TCV2R250XUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power solutions for wireless infrastructure.

This device belongs to Infineon's PTAB series of thermally enhanced LDMOS transistors, engineered specifically for high-efficiency, high-reliability Doherty power amplifiers in cellular base stations operating below 2.2 GHz.

FAQ

What is the recommended gate bias sequence for safe turn-on?

Apply V_GS to G2 (main gate) first to establish 520 mA IDQ, then apply V_GS to G1 (peak gate) only after main drain voltage stabilizes. Reverse sequencing risks peak transistor avalanche due to unclamped voltage rise. Bias supplies must be independently regulated with slew-rate limiting to prevent overshoot beyond ±6 V.

Can this device operate at 32 V supply without derating?

No-maximum rated V_DS is 65 V, but the datasheet specifies all RF performance data at V_DD = 28 V. Operation at 32 V exceeds the validated test conditions and voids guaranteed IMD, efficiency, and P1dB specs. Thermal stress also increases disproportionately above 28 V due to higher conduction loss and reduced safe operating area margin.

Is the flange electrically isolated from the PCB ground plane?

No-the S (flange) terminal is the common source for both main and peak transistors and must be soldered directly to a low-impedance, thermally conductive ground plane. Electrical isolation would break the source return path and cause catastrophic failure. Use non-isolated thermal interface materials compatible with Pb-free soldering.

Does the "V2" in the part number indicate a revision or package change?

Yes-Revision 04 (2014-07-01) explicitly states "Product now Version 2 due to package change", confirming that V2 denotes the transition to the H-49248H-4 formed-leads package with earless copper flange, replacing the prior H-49248H-3 variant. This change improved thermal resistance from 0.38 to 0.34 °C/W.