Infineon Technologies PTAC210802FCV1XWSA1

Overview

PTAC210802FCV1XWSA1 from Infineon Technologies is a 2100–2200 MHz RF power LDMOS transistor rated for 80 W CW output power, featuring 17 dB small-signal gain and 65% drain efficiency at 2140 MHz under 28 V supply. It serves as the final-stage RF power amplifier in macro base station transmitters for LTE and 5G NR TDD infrastructure.

For engineers reviewing the PTAC210802FCV1XWSA1 datasheet, PTAC210802FCV1XWSA1 pinout, PTAC210802FCV1XWSA1 application, or PTAC210802FCV1XWSA1 equivalent, key selection criteria include frequency band alignment (2100–2200 MHz), thermal resistance (0.29°C/W junction-to-case), and ruggedness against VSWR ≥10:1 at full power.

Technical Context

This device employs a silicon-based LDMOS process with gold-metallized source bonding and integrated ESD protection on gate terminals. Its internal matching supports single-ended operation from 2100 to 2200 MHz without external input/output tuning networks.

The transistor operates in Class AB bias configuration with typical quiescent current of 450 mA at V_GS = 2.7 V and V_DS = 28 V. Thermal design requires direct mounting to a copper heat sink via the flanged ceramic package base.

Key Specifications

Pinout & Package

PTAC210802FCV1XWSA1 uses a flanged ceramic-metal package (SOT-1222-1) with electrically isolated tab. The package provides low-inductance source grounding and optimized RF port geometry for microstrip transitions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRFE6VP6800HR5 and QPD1025, PTAC210802FCV1XWSA1 offers optimal balance of proven LDMOS reliability, simplified 28 V biasing, and validated ruggedness for Band 1/n1/n41 macro deployments - reducing qualification time and thermal management overhead.

Availability

PTAC210802FCV1XWSA1 is available at Aetrix Electronics and suitable for LTE macro base stations, 5G NR TDD transmitters, carrier aggregation RF front-ends, and high-power Doherty amplifier modules requiring stable component supply and long-term industrial availability.

Supply support for PTAC210802FCV1XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and RF solutions, with leadership in silicon-based RF power devices.

PTAC210802FCV1XWSA1 belongs to Infineon's OptiMOS™ RF LDMOS product line, engineered specifically for high-efficiency, rugged, and thermally optimized macro base station power amplifiers in licensed cellular bands.

FAQ

What is the recommended gate bias voltage for linear operation?

The PTAC210802FCV1XWSA1 is typically biased at V_GS = 2.7 V for Class AB operation, delivering 450 mA quiescent drain current at V_DS = 28 V. This setting achieves optimal trade-off between linearity (ACPR < –45 dBc for 20 MHz LTE) and efficiency across 2110–2170 MHz. Gate voltage must be stabilized with low-noise regulation and bypassed with ≥100 nF ceramic capacitance.

Does this device require external input/output matching networks?

PTAC210802FCV1XWSA1 features internal input matching optimized for 50 Ω systems from 2100 to 2200 MHz, eliminating external input matching. However, output matching is required to transform 50 Ω to the device's optimal load impedance (~2.5 Ω real part at 2140 MHz), typically implemented with microstrip stubs or lumped LC networks on the PCB.

How is thermal performance validated in real-world deployment?

Infineon validates thermal performance using JEDEC JESD51-14 compliant cold plate testing, measuring R_θJC = 0.29°C/W with 0.5 mm thermal interface material and 25 Nm mounting torque. Field validation includes 1000-hour accelerated life testing at 80 W CW, 28 V, and 85°C case temperature, confirming no parametric shift beyond ±5%.

Can PTAC210802FCV1XWSA1 be used in pulsed radar applications?

No - PTAC210802FCV1XWSA1 is characterized and qualified exclusively for continuous-wave and modulated communication signals (LTE/5G NR). Its thermal design, bias stability, and ruggedness testing are specific to base station transmitter duty cycles (e.g., 10–30% average power). Radar pulse profiles with >1 kW peak power and microsecond pulses exceed its safe operating area limits.