Infineon Technologies PTAC240502FCV1XWSA1

Overview

PTAC240502FC from Infineon Technologies is a thermally-enhanced, asymmetrical Doherty LDMOS FET designed for 2300–2400 MHz multi-standard cellular power amplifier stages. It delivers 47 W typical P1dB output (main path), 33 W peak-path P1dB, 14.3 dB linear gain, 44% drain efficiency at 10 W avg two-carrier WCDMA, and operates at 28 V with 120 mA quiescent current in base station transmitters.

For engineers reviewing the PTAC240502FC datasheet, PTAC240502FC pinout, PTAC240502FC application, or PTAC240502FC equivalent, this device requires attention to dual-gate biasing (VGS1 = 2.6 V, VGS2 = 1.3 V), thermal resistance (RθJC = 1.29 °C/W), VSWR ruggedness (10:1 @ 50 W CW), and H-37248-4 package mounting constraints for RF PA thermal management.

Technical Context

The PTAC240502FC integrates two LDMOS transistors - a main amplifier (D2/G2) and a peak amplifier (D1/G1) - in a single H-37248-4 earless-flange package, enabling asymmetric Doherty operation without external combining networks. Its input-matched design eliminates external input matching components at 2300–2400 MHz.

It supports pulsed CW operation (160 µs, 10% duty cycle) delivering 45.7 W at P1dB with 46.2% efficiency and 14.6 dB gain, and handles 8 dB PAR WCDMA signals with –31 dBc ACPR at 5 MHz offset and –33 dBc IMD under two-carrier conditions.

Key Specifications

Pinout & Package

PTAC240502FC uses the H-37248-4 thermally enhanced, earless-flange package with five terminals: two drains (D1, D2), two gates (G1, G2), and one common source (S) connected to the metal flange. The flange serves as both RF ground and primary thermal conduction path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Doherty RF power amplifier applications.

Compared with PD57018-E and RF3913, the PTAC240502FC uniquely balances 47 W main-path P1dB, integrated input match, and 1.29 °C/W thermal resistance - making it optimal for thermally constrained, single-band 2300–2400 MHz macrocell PAs requiring minimal external matching and proven VSWR ruggedness.

Availability

PTAC240502FC is available at Aetrix Electronics and suitable for macrocell base station power amplifiers, small cell remote radio heads, multi-standard cellular infrastructure, and WCDMA Band IV base station transmitters requiring stable component supply and long-term lifecycle support.

Supply support for PTAC240502FC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power solutions for wireless infrastructure.

The PTAC240502FC belongs to Infineon's Thermally Enhanced LDMOS portfolio, engineered specifically for high-efficiency, high-linearity Doherty PAs in 2–2.7 GHz cellular base stations where thermal density and VSWR robustness are critical.

FAQ

What is the recommended gate bias sequence for reliable Doherty operation?

Apply VGS2 (peak gate) first to 1.3 V, then ramp VGS1 (main gate) to 2.6 V while monitoring IDQ. This prevents peak transistor turn-on before main transistor stabilization, avoiding transient current surges and ensuring proper load modulation. Reverse sequencing risks gate oxide stress and gain compression instability.

Can PTAC240502FC operate safely at 32 V drain supply?

Yes - the absolute maximum VDD is +32 V per datasheet ratings, and pulsed CW testing confirms stable operation at 32 V with 120 mA IDQ. However, efficiency drops ~2.5% and junction temperature rises ~15°C versus 28 V; thermal derating and heatsink validation are mandatory for continuous 32 V use.

Is the H-37248-4 package compatible with standard FR4 PCB assembly processes?

Yes - the H-37248-4 uses gold-plated leads and a flat flange compatible with lead-free reflow (peak 260°C, 60 sec). However, the flange must be soldered to a large, thermally optimized copper pour (≥4 cm², ≥2 oz Cu) with ≥6 thermal vias to maintain RθJC ≤ 1.29 °C/W in production assemblies.

Does PTAC240502FC require external ESD protection in the final design?

No - the device integrates HBM Class 1B ESD protection on all pins, sufficient for board-level handling and normal RF signal paths. External TVS diodes are unnecessary unless the application faces extreme system-level ESD events (>8 kV contact discharge) beyond IEC 61000-4-2 Level 4.