Infineon Technologies PTF080101M V1

Overview

PTF080101M from Infineon Technologies is an unmatched 10 W LDMOS RF power transistor designed for Class AB base station amplifiers in the 450–960 MHz band. It delivers 16 dB small-signal gain, 35% drain efficiency at 10 W PEP output, –28 dBc intermodulation distortion at 960 MHz, and operates with 28 V drain supply and 180 mA quiescent current. Used in cellular infrastructure transmitters requiring high linearity and thermal stability.

For engineers reviewing the PTF080101M datasheet, PTF080101M pinout, PTF080101M application, or PTF080101M equivalent, this page provides verified RF performance data, gate-source bias behavior across temperature, broadband impedance matching networks, ESD protection rating (HBM Class 1), and VSWR ruggedness (10:1 @ 28 V, 10 W CW).

Technical Context

This LDMOS FET employs a gold-metallized gate structure optimized for high-frequency RF power amplification. Its DC characteristics include 65 V drain-source breakdown voltage, 0.83 Ω on-state resistance, and 2.5–4.0 V operating gate voltage range at 180 mA IDQ. Thermal resistance is 6.5 °C/W (junction-to-case) under 10 W DC operation at TCASE = 70 °C.

The device supports EDGE modulation with 5.0 W average output, 19 dB gain, 37% efficiency, and 2.0% RMS EVM at 959.8 MHz. CW performance yields 12.5 W output at P–1dB, 18 dB gain, and 50% efficiency - confirming its suitability for both modulated and continuous-wave base station stages.

Key Specifications

Pinout & Package

Package: PG-RFP-10 (molded plastic SMD, TSSOP-10 outline), dimensions 4.9 mm × 3.0 mm × 0.85 mm, with underside source connection and 10-terminal layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6VP2150HR5 and PD57018-E, the PTF080101M uniquely balances 960 MHz gain-efficiency-linearity trade-offs while offering factory-integrated ESD protection and proven VSWR ruggedness - making it optimal for cost-sensitive, thermally constrained GSM/EDGE macrocell deployments.

Availability

PTF080101M is available at Aetrix Electronics and suitable for GSM base station transmitters, DCS1800 uplink amplifiers, EDGE-compatible remote radio heads, and public safety land mobile radio repeaters requiring stable component supply and full traceability.

Supply support for PTF080101M includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and RF solutions, with headquarters in Munich and global R&D centers.

The GOLDMOS® product line targets high-reliability RF power amplification in wireless infrastructure, emphasizing thermal robustness, linearity, and manufacturability for macrocell and small-cell base stations.

FAQ

What is the recommended gate bias network for PTF080101M in Class AB operation?

The datasheet specifies 2.5–4.0 V gate-source voltage at 180 mA IDQ. A stable bias uses two 5.1 kΩ resistors (R6/R7) and a 2 kΩ potentiometer (R4) for adjustment, as shown in the reference schematic on Data Sheet 5. Gate decoupling requires 0.001 µF capacitors (C1/C2/C3) placed within 2 mm of pins 1–5 to suppress VHF oscillation.

Does PTF080101M require external ESD protection in PCB layout?

No - the device integrates Human Body Model Class 1 ESD protection (≥2 kV) on gate and drain terminals. External TVS diodes are unnecessary unless system-level IEC 61000-4-2 Level 4 immunity is required, in which case discrete protection should be placed at connector interfaces, not at the transistor pins.

Can PTF080101M operate reliably at junction temperatures above 125 °C?

Yes - the absolute maximum junction temperature is 150 °C. However, lifetime testing shows accelerated HCI degradation above 135 °C. For continuous 10 W PEP operation, maintain TCASE ≤ 70 °C (via heatsink design) to ensure >10-year MTBF per Telcordia SR-332.

What is the significance of the "0081" marking on the PTF080101M package?

"0081" is the Infineon internal lot code identifier printed on the top surface of the PG-RFP-10 package. It encodes wafer batch, assembly date, and test site information - used for traceability and failure analysis, not functional differentiation from other PTF080101M units.