Infineon Technologies PTF080101S V1

Overview

PTF080101S from Infineon is a thermally-enhanced 10 W RF LDMOS FET designed for broadband 860–960 MHz EDGE and CDMA base station power amplifiers. It delivers 5 W average output power at 959.8 MHz with 18.5 dB gain, 38% drain efficiency, and 2.0% RMS EVM under EDGE modulation at V_DD = 28 V and I_DQ = 150 mA.

For engineers reviewing the PTF080101S datasheet, PTF080101S pinout, PTF080101S application, or PTF080101S equivalent, this device supports high-linearity, high-efficiency RF power amplification in cellular infrastructure where thermal stability, VSWR ruggedness (10:1 @ 28 V, 10 W CW), and low HCI drift are critical design requirements.

Technical Context

The PTF080101S is a single-ended, internally matched N-channel LDMOS transistor optimized for Class AB operation in 860–960 MHz cellular bands. Its gold-metallized die and thermally enhanced SMD package (R_θJC = 3.0 °C/W) enable stable junction temperatures up to 200 °C under high-power modulation.

It features integrated ESD protection (HBM Class 1), operates with V_GS = 2.5–4.0 V at I_DQ = 150 mA, and maintains broadband gain flatness (±0.5 dB) and return loss >10 dB across 860–960 MHz with internal matching to 50 Ω source/load impedances.

Key Specifications

Pinout & Package

Package: Thermally-enhanced SMD outline 32259 (Infineon standard), 6.86 mm × 6.86 mm × 1.78 mm, copper leadframe with exposed drain paddle for thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6V2150N and PD85008, the PTF080101S uniquely balances 5 W EDGE linearity, 10 W CW ruggedness, and 3.0 °C/W thermal resistance in a single 860–960 MHz broadband solution - making it optimal for cost-sensitive, thermally constrained EDGE/CDMA hybrid base stations.

Availability

PTF080101S is available at Aetrix Electronics and suitable for macrocell base station power amplifiers, EDGE/CDMA transmitter modules, multi-carrier cellular amplifiers, and ruggedized remote radio heads requiring stable component supply across extended temperature and RF performance specifications.

Supply support for PTF080101S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power transistors for wireless infrastructure.

The PTF080101S belongs to Infineon's GOLDMOS LDMOS product line, engineered specifically for thermally demanding, high-linearity cellular base station applications in the 800–1000 MHz bands.

FAQ

What is the maximum continuous drain current rating for PTF080101S?

The PTF080101S does not specify a maximum continuous drain current (I_D) rating; instead, its safe operating area is defined by maximum drain-source voltage (65 V), junction temperature (200 °C), and total device dissipation (58 W). At V_DD = 28 V and 10 W output, typical I_D peaks near 0.5 A during RF cycles, well within thermal limits when properly heatsinked.

Does PTF080101S require external gate protection diodes?

No - the device integrates ESD protection rated to Human Body Model Class 1 (≥2 kV), and its gate oxide is qualified for standard handling per JESD22-A114. External gate protection is unnecessary unless operating in extreme electrostatic environments beyond Class 1 requirements.

Can PTF080101S operate at 24 V supply instead of 28 V?

Yes - the device is characterized at V_DD = 28 V but functions across 20–35 V per the reference circuit and supply voltage vs. output power curves. At 24 V, output power drops ~1.5 dB (≈2.8 W avg for EDGE), with proportional reduction in efficiency and gain; bias must be re-optimized for I_DQ.

Is the PTF080101S pinout compatible with other Infineon 32259-package LDMOS devices?

Yes - all Infineon LDMOS transistors in package outline 32259 (e.g., PTF080102S, PTF081101S) share identical mechanical footprint, thermal pad layout, and G-D-S pin assignment. However, electrical characteristics (gain, power, bias) differ, so circuit re-characterization is required for substitution.