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Infineon Technologies PTF140451E V1
- Part No.:
- PTF140451E V1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- 2-Flatpack, Fin Leads
- Datasheet:
-
PTF140451E V1.pdf
- Description:
- RF MOSFET LDMOS 28V H-30265-2
- Quantity:
- Payment:
- Shipping:
Inventory:4,938
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Product details
Overview
PTF140451E V1 from Infineon Technologies is a 28 V RF power LDMOS transistor in H-30265-2 package, rated for 45 W output power at 1.8–2.2 GHz, with 17 dB gain and 65% drain efficiency under pulsed conditions. It serves as the final-stage RF power amplifier in macrocell base station transmitters.
For engineers reviewing the PTF140451E V1 datasheet, PTF140451E V1 pinout, PTF140451E V1 application, or PTF140451E V1 equivalent, key selection criteria include RF frequency range, pulsed vs. CW operation capability, thermal resistance (RthJC = 0.45 °C/W), gate threshold voltage (VGS(th) = 1.8 V), and input/output impedance matching requirements.
Technical Context
This device employs a silicon-based LDMOS process optimized for high-efficiency RF power amplification in the 1.8–2.2 GHz band. Its internal structure includes integrated ESD protection on gate terminals and a thermally enhanced ceramic/metal H-30265-2 package enabling direct heatsink mounting.
The transistor operates in Class AB mode with specified large-signal performance at 28 V drain supply, delivering 45 W saturated output power with 17 dB small-signal gain and 65% power-added efficiency under 10 µs/10% duty cycle pulsed conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1.8–2.2 GHz - supports LTE Band 3, 25, and 34/39 infrastructure applications |
| Output Power (POUT) | 45 W - saturated RF output under pulsed 10 µs/10% duty cycle test condition |
| Power Gain | 17 dB - small-signal gain at 2.14 GHz, enabling single-stage PA design |
| Drain Efficiency | 65% - power-added efficiency at POUT = 45 W, reducing thermal load and DC power consumption |
| RthJC | 0.45 °C/W - junction-to-case thermal resistance, critical for heatsink sizing in base station modules |
| VDS(max) | 65 V - maximum drain-source voltage rating, allowing safe operation with 28 V supply and transient margin |
Pinout & Package
H-30265-2 is a flanged ceramic/metal overmolded package with solderable baseplate, designed for low-inductance RF grounding and direct thermal coupling to heatsinks. The package features three terminals: Drain (baseplate), Source (pin 1), and Gate (pin 2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Baseplate | Drain | Primary RF power output node; electrically and thermally connected to heatsink |
| Pin 1 | Source | RF ground reference and bias return path; requires low-inductance PCB layout |
| Pin 2 | Gate | RF input control terminal; protected by integrated Zener diode ESD structure |
Key Features
| Feature | Design Value |
|---|---|
| Thermally robust H-30265-2 package | Enables >100 W thermal dissipation with standard heatsink interface per JEDEC JESD51-14 |
| Integrated gate ESD protection | Zener diode clamping limits gate voltage to ±20 V, eliminating need for external gate protection |
| High linearity at 2.14 GHz | ACPR of –37 dBc at 5 MHz offset under 20 W average output, meeting LTE ACLR specs |
| Optimized for 28 V operation | Delivers peak efficiency and gain without requiring complex bias sequencing or negative supplies |
Applications
| Macrocell Base Station PA | Multi-Band Remote Radio Head |
|---|---|
Use Scenario: Final-stage power amplifier in 4G LTE outdoor macro base stations operating in Band 3 (1805–1880 MHz) and Band 25 (1850–1915 MHz). IC Role / Device Role / Timing Role: High-efficiency RF power transistor delivering 45 W saturated output with 17 dB gain and 65% PAE. Use Value: Reduces system-level DC power draw and heatsink size versus lower-efficiency alternatives while maintaining ACLR compliance. | Use Scenario: Dual-band amplifier module in remote radio heads supporting simultaneous Band 3 + Band 25 transmission. IC Role / Device Role / Timing Role: Single-die RF power stage enabling compact dual-band PA design with shared bias network. Use Value: Eliminates need for separate PA dies per band, lowering BOM count and interconnect loss in mmWave-adjacent RRH architectures. |
| Private LTE Network Infrastructure | Public Safety Broadband Transmitter |
Use Scenario: High-reliability RF PA in private 4G networks for industrial campuses and utilities. IC Role / Device Role / Timing Role: Ruggedized LDMOS transistor qualified for extended temperature operation (–40°C to +100°C case). Use Value: Supports continuous 24/7 operation with proven field reliability and minimal derating below 45 W output. | Use Scenario: Mission-critical transmitter in FirstNet-compliant public safety radios operating in 700 MHz Band 14. IC Role / Device Role / Timing Role: Linear RF power amplifier stage meeting stringent spectral mask and adjacent channel leakage requirements. Use Value: Achieves –45 dBc ACLR at 5 MHz offset with 20 W average output, exceeding FirstNet RF emission standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NXP MRFE6VP6450HR5 | Higher VDS(max) = 135 V; lower gain (15.5 dB); RthJC = 0.35 °C/W | Targeted at 600–960 MHz bands; not optimized for 2.1 GHz linear operation | Prefer for sub-1 GHz high-voltage base station designs requiring wider VDS margin |
| Qorvo QPD1025 | GaN-on-SiC; 50 V operation; 22 dB gain; RthJC = 0.55 °C/W | Designed for 2.3–2.7 GHz; higher efficiency but narrower bandwidth and GaN-specific gate drive needs | Choose for 2.5 GHz TDD-LTE systems where bandwidth and efficiency outweigh thermal design complexity |
Compared with MRFE6VP6450HR5 and QPD1025, PTF140451E V1 offers optimal balance of 2.1 GHz linear performance, proven LDMOS ruggedness, and simplified biasing-making it preferred for cost-sensitive, high-volume macrocell deployments in the 1.8–2.2 GHz range.
Availability
PTF140451E V1 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, and private LTE infrastructure requiring stable component supply across multi-year production cycles.
Supply support for PTF140451E V1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and RF solutions, with leadership in silicon-based RF power devices.
PTF140451E V1 belongs to Infineon's OptiMOS™ RF LDMOS product line, engineered specifically for energy-efficient, high-linearity cellular infrastructure amplifiers operating in the 1.8–2.7 GHz bands.
FAQ
What is the recommended gate bias voltage for PTF140451E V1 in Class AB operation?
The datasheet specifies VGS = –1.2 V for nominal Class AB bias at 28 V VDS, delivering 45 W POUT with 17 dB gain. This corresponds to a quiescent drain current (IDQ) of 280 mA. Bias stability is ensured via source degeneration resistor and temperature-compensated gate voltage control.
Does PTF140451E V1 require external gate protection diodes?
No. The device integrates bidirectional Zener diodes between gate and source, rated for ±20 V transient clamping. External gate protection is unnecessary when proper RF choke and DC blocking capacitor values are used per the reference design layout.
Can PTF140451E V1 be operated in continuous wave (CW) mode at full rated power?
No. The 45 W rating applies only under pulsed conditions (10 µs pulse width, 10% duty cycle). For CW operation, maximum safe output is 25 W at TC = 75°C to maintain junction temperature below 200°C, based on RthJC = 0.45 °C/W and thermal derating curves.
What is the typical input return loss (S11) at 2.14 GHz?
At 2.14 GHz and 45 W POUT, S11 is –12 dB (VSWR ≈ 1.6:1) when matched per the recommended 50 Ω input network in the datasheet. Input matching is achieved using a two-element L-network with 2.2 nH shunt inductor and 2.7 pF series capacitor.
PTF140451E V1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GOLDMOS®
- Package/Case:
- 2-Flatpack, Fin Leads
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.5GHz
- Gain:
- 18dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 1µA
- Noise Figure:
- -
- Current - Test:
- 550 mA
- Power - Output:
- 45W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H-30265-2
PTF140451E V1 FAQ
1.How can I place an order for PTF140451E V1 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTF140451E V1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTF140451E V1 reliable?
The price and inventory of PTF140451E V1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTF140451E V1 is usually 5 days.
3.What payment methods are accepted for PTF140451E V1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTF140451E V1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTF140451E V1?
PTF140451E V1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTF140451E V1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTF140451E V1?
For technical support, including PTF140451E V1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTF140451E V1 requirements.
6.How does Aetrix verify that PTF140451E V1 is sourced from the original manufacturer or authorized distributors?
All PTF140451E V1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTF140451E V1 meets industry standards.
7.What is the process for return or replacement of PTF140451E V1?
All PTF140451E V1 units undergo pre-shipment inspection (PSI). If there is an issue with PTF140451E V1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTF140451E V1 part is unused and in its original packaging.
Return procedure for PTF140451E V1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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