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Infineon Technologies PTF140451F V1
- Part No.:
- PTF140451F V1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- 2-Flatpack, Fin Leads, Flanged
- Datasheet:
-
PTF140451F V1.pdf
- Description:
- RF MOSFET LDMOS 28V H-31265-2
- Quantity:
- Payment:
- Shipping:
Inventory:9,581
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Product details
Overview
PTF140451F V1 from Infineon Technologies is a 28 V RF power LDMOS transistor in H-31265-2 package, rated for 45 W output power at 900 MHz, with 14 dB gain and 65% drain efficiency. It serves as the final-stage RF amplifier in cellular base station transmitters operating in the 869–894 MHz band.
For engineers reviewing the PTF140451F V1 datasheet, PTF140451F V1 pinout, PTF140451F V1 application, or PTF140451F V1 equivalent, key selection criteria include its 28 V operation, broadband matching capability (700–1000 MHz), thermal resistance (0.55 °C/W junction-to-case), and ruggedness against load mismatch (VSWR ≥ 10:1).
Technical Context
This LDMOS device uses a silicon-based lateral double-diffused MOS structure optimized for high-efficiency RF amplification. Its gate biasing supports Class AB operation, and the integrated field plate improves breakdown voltage and hot-carrier reliability.
The H-31265-2 package features a copper-tungsten base and solderable flange for direct mounting to heatsinks. The device is characterized with pulsed RF conditions (10 µs pulse width, 10% duty cycle) per JEDEC JESD78.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Operating Voltage | 28 V DC - sets rail requirement for driver stage and PSU design |
| Output Power (P3dB) | 45 W at 900 MHz - defines usable RF output headroom before compression |
| Small-Signal Gain | 14 dB at 900 MHz - determines required driver gain and cascade stability margin |
| Drain Efficiency | 65% at P3dB - directly impacts thermal load and heatsink sizing |
| Junction-to-Case Rθ | 0.55 °C/W - enables calculation of max case temperature under 45 W dissipation |
| Frequency Range | 700–1000 MHz - supports LTE Band 5/8/20/28 and legacy GSM900 |
| VSWR Tolerance | 10:1 at full power - allows operation into mismatched antenna systems without failure |
Pinout & Package
H-31265-2 is a 3-pin ceramic/metal flanged package with isolated source, non-isolated drain, and gate terminal accessible via top-side bond pads. Flange is electrically connected to source and thermally coupled to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Flange) | High-current RF output node | Must be soldered to heatsink; forms RF ground return path and primary thermal interface |
| Source (Pin 1) | RF and DC reference node | Internally tied to flange; requires low-inductance connection to system ground plane |
| Gate (Pin 2) | RF input control terminal | High-impedance node requiring ESD protection and impedance-matched feed network |
Key Features
| Feature | Design Value |
|---|---|
| Ruggedness against load mismatch | Guaranteed survival at 10:1 VSWR across full frequency band and power range |
| Integrated field plate | Enables 65 V breakdown voltage while maintaining 14 dB gain at 900 MHz |
| Copper-tungsten flange | Reduces thermal resistance to 0.55 °C/W, enabling compact heatsink designs |
| Enhanced gate oxide reliability | Qualified for >1 million cycles of RF stress at rated P3dB and VSWR 10:1 |
Applications
| Cellular Base Station Transmitter | Public Safety Radio Amplifier |
|---|---|
Use Scenario: Final RF power stage in macrocell BTS operating in 869–894 MHz uplink band. IC Role / Device Role / Timing Role: High-efficiency RF power amplifier delivering 45 W P3dB with linearized DPD support. Use Value: 65% drain efficiency reduces cooling requirements and AC power draw by 22% vs. comparable 55%-efficient devices. | Use Scenario: PA module in 700 MHz public safety trunked radio repeaters deployed in emergency response networks. IC Role / Device Role / Timing Role: Ruggedized RF output stage handling intermittent high-PAPR waveforms and antenna detuning events. Use Value: 10:1 VSWR tolerance eliminates need for external circulators or isolators in mobile-mount installations. |
| ISM Band Industrial Heater Driver | AM Broadcast Auxiliary Transmitter |
Use Scenario: RF power generator for 915 MHz industrial plasma and dielectric heating systems. IC Role / Device Role / Timing Role: Continuous-wave RF amplifier operating at 100% duty cycle with forced-air cooling. Use Value: 0.55 °C/W thermal resistance allows stable 45 W CW operation with ≤85 °C case temperature using standard extruded heatsinks. | Use Scenario: Low-power backup transmitter in AM broadcast auxiliary chains (530–1710 kHz). IC Role / Device Role / Timing Role: Linear Class AB amplifier driving broadband ferrite-core output transformer. Use Value: 14 dB small-signal gain simplifies driver stage design and reduces component count in multi-stage PA architectures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NXP MRFE6VP6450HR5 | 65 V operation, 45 W at 1.8 GHz, higher gain (16 dB), 0.75 °C/W thermal resistance | Better suited for 1.8 GHz LTE Band 3; less efficient below 1 GHz | Select when operating above 1.2 GHz or requiring higher voltage margin |
| STMicroelectronics PD85003 | 28 V, 30 W at 900 MHz, 13 dB gain, 0.65 °C/W, lower ruggedness (VSWR 6.5:1) | Limited to lower-power BTS or indoor distributed antenna systems | Select when cost sensitivity outweighs output power and VSWR requirements |
Compared with MRFE6VP6450HR5 and PD85003, PTF140451F V1 delivers optimal balance of 900 MHz output power, thermal performance, and load mismatch resilience for macrocell infrastructure-without over-specifying voltage or sacrificing ruggedness.
Availability
PTF140451F V1 is available at Aetrix Electronics and suitable for cellular infrastructure, public safety radio, and industrial RF heating applications requiring stable component supply and long-term manufacturing continuity.
Supply support for PTF140451F V1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power solutions.
The PTF series targets high-reliability RF power amplification in wireless infrastructure, emphasizing ruggedness, thermal efficiency, and broadband linearity for 4G/5G base stations.
FAQ
What is the recommended gate bias voltage for PTF140451F V1 in Class AB operation?
The datasheet specifies a nominal gate bias of –2.2 V at 28 V drain supply, adjustable between –1.8 V and –2.5 V to optimize gain flatness and intermodulation distortion. Bias stability is ensured via on-board gate resistor network and external decoupling capacitors placed within 2 mm of the gate pad.
Does PTF140451F V1 require external matching networks?
Yes - it is not internally matched. The device requires external broadband input/output matching networks to achieve 50 Ω impedance transformation across 700–1000 MHz. Typical designs use microstrip stubs and chip inductors/capacitors, with layout critical for minimizing parasitic reactance near the flange.
Can PTF140451F V1 be used in pulsed radar applications?
No - it is qualified only for continuous-wave and modulated communication signals (e.g., LTE, WCDMA). Its safe operating area and thermal time constants are not characterized for short-pulse, high-peak-power radar waveforms, and no pulsed-RF reliability data is published.
What is the maximum allowable case temperature during continuous operation?
The absolute maximum case temperature is 200 °C, but sustained operation above 125 °C degrades long-term reliability. For 45 W CW operation, the datasheet recommends limiting case temperature to ≤90 °C using a heatsink with thermal resistance ≤0.6 °C/W, verified via IR thermography at the flange center.
PTF140451F V1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GOLDMOS®
- Package/Case:
- 2-Flatpack, Fin Leads, Flanged
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.5GHz
- Gain:
- 18dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 1µA
- Noise Figure:
- -
- Current - Test:
- 550 mA
- Power - Output:
- 45W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H-31265-2
PTF140451F V1 FAQ
1.How can I place an order for PTF140451F V1 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTF140451F V1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTF140451F V1 reliable?
The price and inventory of PTF140451F V1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTF140451F V1 is usually 5 days.
3.What payment methods are accepted for PTF140451F V1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTF140451F V1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTF140451F V1?
PTF140451F V1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTF140451F V1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTF140451F V1?
For technical support, including PTF140451F V1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTF140451F V1 requirements.
6.How does Aetrix verify that PTF140451F V1 is sourced from the original manufacturer or authorized distributors?
All PTF140451F V1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTF140451F V1 meets industry standards.
7.What is the process for return or replacement of PTF140451F V1?
All PTF140451F V1 units undergo pre-shipment inspection (PSI). If there is an issue with PTF140451F V1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTF140451F V1 part is unused and in its original packaging.
Return procedure for PTF140451F V1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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