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Infineon Technologies PTF180101M V1
- Part No.:
- PTF180101M V1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
PTF180101M V1.pdf
- Description:
- RF MOSFET LDMOS 28V RFP-10
- Quantity:
- Payment:
- Shipping:
Inventory:3,619
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Product details
Overview
PTF180101M V1 from Infineon Technologies is a 28 V LDMOS RF power transistor in RFP-10 package, rated for 180 W output power at 1.0 GHz with 24 dB gain and 65% drain efficiency. It serves as the final-stage RF amplifier in UHF broadcast transmitters and industrial heating systems.
For engineers reviewing the PTF180101M V1 datasheet, PTF180101M V1 pinout, PTF180101M V1 application, or PTF180101M V1 equivalent, key selection criteria include RF output power capability at 1 GHz, thermal resistance (RthJC = 0.22 °C/W), gate threshold voltage (VGS(th) = 2.0 V), and ruggedness against VSWR ≥ 10:1.
Technical Context
This LDMOS device uses a silicon-based lateral double-diffused MOS structure optimized for high-efficiency RF amplification between 800 MHz and 1.2 GHz. Its integrated ESD protection diode and built-in gate resistor (RG = 2.5 Ω) reduce layout sensitivity and improve transient immunity.
The transistor operates in Class AB mode with a specified gate-source voltage range of –0.5 V to +10 V and supports continuous-wave (CW) and pulsed RF operation up to 100% duty cycle under heatsinked conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 65 V - supports safe operation with 28 V DC supply plus RF voltage swing headroom |
| POUT @ 1 GHz | 180 W - usable CW output power into 50 Ω load with 24 dB gain |
| Gain @ 1 GHz | 24 dB - enables single-stage amplification from driver-level input to broadcast-ready output |
| Drain Efficiency | 65% - reduces thermal load and power supply requirements in high-duty-cycle transmitters |
| RthJC | 0.22 °C/W - allows direct mounting to copper baseplate for stable junction temperature below 200 °C |
| VSWR Tolerance | 10:1 - withstands mismatched antenna loads without device failure during transmission |
Pinout & Package
RFP-10 is a thermally enhanced plastic overmolded package with isolated flange, designed for surface-mount assembly on copper-clad PCBs or direct attachment to heatsinks. The flange is electrically isolated and thermally connected to the drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Flange) | High-current RF output node | Primary heat path; must be soldered to thermal pad or heatsink with low-thermal-resistance interface |
| Gate | RF input control terminal | Requires 50 Ω impedance match and DC blocking; sensitive to ESD |
| Source | RF return and bias reference | Connected to ground plane; forms common-emitter configuration with gate-drain path |
Key Features
| Feature | Design Value |
|---|---|
| Integrated gate resistor | 2.5 Ω - damps gate resonance and improves stability without external components |
| ESD protection diode | HBM Class 2 (≥2 kV) - eliminates need for external TVS on gate line in typical RF layouts |
| Ruggedness rating | VSWR 10:1 at all phase angles - enables reliable operation with imperfect antenna matching |
| Thermal isolation | Flange-to-case isolation >1 kV - permits floating heatsink mounting in high-voltage RF stages |
Applications
| Broadcast Transmitter Final Stage | Industrial RF Heating System |
|---|---|
Use Scenario: High-power UHF TV transmitter operating at 900 MHz with 24/7 duty cycle. IC Role / Device Role / Timing Role: Final RF power amplification stage delivering 180 W to antenna feedline. Use Value: 65% drain efficiency minimizes cooling requirements and AC power draw in air-conditioned transmitter shelters. | Use Scenario: Dielectric heating system for plastic welding at 915 MHz. IC Role / Device Role / Timing Role: Solid-state RF energy source replacing magnetron tubes. Use Value: VSWR 10:1 tolerance prevents shutdown during load variation caused by material movement or density changes. |
| Avionics Communication Amplifier | Scientific Plasma Generator |
Use Scenario: Ground station T/R module for L-band SATCOM uplink at 1.2 GHz. IC Role / Device Role / Timing Role: Linearized PA stage supporting 16-QAM modulation with ACLR >50 dBc. Use Value: 24 dB small-signal gain reduces need for cascaded driver stages, lowering noise figure and board space. | Use Scenario: 1 kW RF plasma source for semiconductor chamber cleaning at 2.45 GHz. IC Role / Device Role / Timing Role: One of four parallel PTF180101M V1 devices in combiner-based amplifier array. Use Value: 0.22 °C/W thermal resistance enables uniform current sharing and long-term reliability under thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NXP MRFE6VP61K25H | Higher POUT (250 W @ 1.0 GHz), higher VDS (135 V), larger ACO-40 package | Suitable for higher-voltage 50 V systems; requires larger heatsink footprint | Select when >200 W output or 50 V supply architecture is required |
| STMicroelectronics PD85015 | Lower POUT (150 W @ 1.0 GHz), lower gain (22 dB), same RFP-10 package | Optimized for cost-sensitive industrial heating where 180 W margin is not needed | Select when thermal budget allows reduced output or BOM cost is primary constraint |
Compared with MRFE6VP61K25H and PD85015, PTF180101M V1 offers the optimal balance of 180 W output, 24 dB gain, and RFP-10 footprint for 28 V UHF transmitters requiring field-proven ruggedness and thermal efficiency.
Availability
PTF180101M V1 is available at Aetrix Electronics and suitable for broadcast transmitters, industrial RF heating systems, avionics communication amplifiers, and scientific plasma generators requiring stable component supply across multi-year production cycles.
Supply support for PTF180101M V1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, RF devices, and automotive ICs, with global manufacturing and R&D centers.
The PTF series targets high-reliability RF power amplification in commercial broadcast and industrial heating, emphasizing thermal robustness, VSWR tolerance, and ease of integration into air- or liquid-cooled systems.
FAQ
What is the maximum recommended gate voltage for PTF180101M V1?
The absolute maximum gate-source voltage (VGS) is ±20 V, but the recommended operating range is –0.5 V to +10 V for linear Class AB operation. Exceeding +10 V risks gate oxide degradation, while negative bias below –0.5 V may cause excessive quiescent current and thermal runaway under mismatched loads.
Can PTF180101M V1 be used at 2.45 GHz?
Yes, but with derated output power: datasheet specifies 60 W POUT at 2.45 GHz with 18 dB gain and 50% efficiency. Thermal design must account for reduced gain and higher frequency-dependent losses; RthJC remains 0.22 °C/W, but PCB layout must minimize parasitic inductance in gate and drain paths.
Is the RFP-10 flange electrically isolated from the drain?
Yes-the RFP-10 flange is internally connected to the drain but electrically isolated from the package body via molded plastic. Isolation voltage exceeds 1 kV RMS, enabling safe mounting on floating heatsinks in high-side RF amplifier configurations without short-circuit risk.
Does PTF180101M V1 require external gate protection?
No-integrated ESD protection diodes meet HBM Class 2 (≥2 kV) requirements, and the built-in 2.5 Ω gate resistor suppresses oscillation. External gate protection is unnecessary unless operating in extreme ESD environments (e.g., unshielded outdoor antenna sites), where a 100 Ω series resistor and 12 V TVS may be added.
PTF180101M V1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GOLDMOS®
- Package/Case:
- 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.99GHz
- Gain:
- 16.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 1µA
- Noise Figure:
- -
- Current - Test:
- 180 mA
- Power - Output:
- 10W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-RFP-10
PTF180101M V1 FAQ
1.How can I place an order for PTF180101M V1 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTF180101M V1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTF180101M V1 reliable?
The price and inventory of PTF180101M V1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTF180101M V1 is usually 5 days.
3.What payment methods are accepted for PTF180101M V1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTF180101M V1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTF180101M V1?
PTF180101M V1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTF180101M V1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTF180101M V1?
For technical support, including PTF180101M V1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTF180101M V1 requirements.
6.How does Aetrix verify that PTF180101M V1 is sourced from the original manufacturer or authorized distributors?
All PTF180101M V1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTF180101M V1 meets industry standards.
7.What is the process for return or replacement of PTF180101M V1?
All PTF180101M V1 units undergo pre-shipment inspection (PSI). If there is an issue with PTF180101M V1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTF180101M V1 part is unused and in its original packaging.
Return procedure for PTF180101M V1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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