Infineon Technologies PTF210101M V1

Overview

PTF210101M from Infineon Technologies is a high-power RF LDMOS FET designed for class AB base station amplifiers in the 2110–2170 MHz band. It delivers 10 W PEP output power, 15 dB small-signal gain, and 35% drain efficiency at 2170 MHz under VDD = 28 V, IDQ = 180 mA conditions, supporting WCDMA and LTE infrastructure transmitters.

For engineers reviewing the PTF210101M datasheet, PTF210101M pinout, PTF210101M application, or PTF210101M equivalent, key selection criteria include its 65 V V(BR)DSS rating, 6.5 °C/W thermal resistance, 10:1 VSWR ruggedness, integrated ESD protection (HBM Class 1), and PG-RFP-10 surface-mount package optimized for RF power amplifier stages.

Technical Context

The PTF210101M operates as a single-ended, unmatched N-channel LDMOS transistor with gate bias controlled via external resistive network. Its RF performance is characterized using a 50 Ω source/load reference circuit tuned for 2170 MHz, where it achieves –28 dBc two-tone IMD and –45 dBc ACPR under WCDMA signal conditions.

Thermal design relies on direct die-to-case conduction through the exposed drain paddle (pins 6–10), with junction-to-case thermal resistance specified at 6.5 °C/W at TCASE = 70°C and 10 W DC dissipation. Gate threshold voltage drift is minimized across –20°C to +100°C case temperature range, maintaining stable IDQ under varying thermal loads.

Key Specifications

Pinout & Package

Package: PG-RFP-10 (TSSOP-10 outline), molded plastic SMD with exposed drain paddle for thermal and electrical connection. Dimensions: 4.9 mm × 3.0 mm × 0.85 mm. Pin pitch: 0.42 mm. Index marking on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTF210101M, the PTF210101E offers identical performance in the same footprint, while MRF6P21190HR5 provides higher power and bandwidth at the cost of size, thermal mass, and layout redesign-making PTF210101M optimal for space-constrained 10 W WCDMA/LTE PA stages.

Availability

PTF210101M is available at Aetrix Electronics and suitable for macrocell base stations, small cell radio units, WCDMA Node B transmitters, and LTE FDD Band I booster amplifiers requiring stable component supply and long-term lifecycle support.

Supply support for PTF210101M includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global R&D and manufacturing infrastructure.

The GOLDMOS® RF power transistor product line targets wireless infrastructure applications, emphasizing high efficiency, ruggedness, and linearity in cellular base station power amplifiers from 700 MHz to 3.8 GHz.

FAQ

What is the recommended gate bias network for PTF210101M in WCDMA operation?

The datasheet specifies a fixed-resistor bias network (R1 = 1.2 kΩ, R2 = 1.3 kΩ, R4 = 2 kΩ potentiometer) delivering VGS = 2.5–4.0 V to achieve IDQ = 180 mA at VDD = 28 V. This network ensures stable quiescent current across temperature and minimizes gate current noise coupling into the RF path.

Can PTF210101M be operated in class C for higher efficiency?

No-PTF210101M is characterized and qualified for class AB operation only. Its gate threshold voltage (2.5–4.0 V) and transconductance profile are optimized for linear amplification; class C use would cause excessive distortion, thermal runaway, and potential device failure due to uncontrolled IDQ collapse.

Is the PG-RFP-10 package lead-free compatible with standard Pb-free reflow profiles?

Yes-the PTF210101M meets JEDEC J-STD-020D moisture sensitivity level 3 and is qualified for peak reflow temperatures up to 260°C. The SnAgCu solder finish and mold compound are fully compliant with IPC/JEDEC standards for Pb-free assembly.

Does PTF210101M require external ESD protection in PCB layout?

No-integrated HBM Class 1 ESD protection (≥2 kV) is built into the gate structure per datasheet specification. External TVS diodes or series resistors are unnecessary and may degrade RF performance by adding parasitic capacitance or inductance.