Infineon Technologies PTF240101S V1

Overview

PTF240101S from Infineon is a thermally-enhanced, internally-matched 10 W RF LDMOS FET designed for CDMA2000 and WiMAX base station power amplifier stages in the 2.4–2.7 GHz band. It delivers 2.0 W average output power at 2680 MHz with 16 dB gain, 18% drain efficiency, and –55 dBc ACPR under CDMA2000 modulation. Its 65 V V(BR)DSS rating and 10:1 VSWR ruggedness support robust operation in cellular infrastructure amplifiers.

For engineers reviewing the PTF240101S datasheet, PTF240101S pinout, PTF240101S application, or PTF240101S equivalent, this page provides verified RF performance data, thermal resistance (RθJC = 3.0 °C/W), gate bias requirements (VGS = 2.5–4.0 V at IDQ = 180 mA), broadband impedance matching points, and validated alternative transistors for 2.4–2.7 GHz PA designs.

Technical Context

This LDMOS FET operates as a Class AB RF power amplifier stage with fixed gate biasing and broadband microstrip matching. Its internal matching network enables direct integration into 50 Ω systems without external input/output tuning networks across 2.4–2.7 GHz.

The device uses gold metallization for enhanced reliability and exhibits low HCI drift and excellent thermal stability up to TJ = 200 °C. Its 3.0 °C/W junction-to-case thermal resistance supports high-power CW operation (15 W P–1dB) and 10 W PEP with minimal derating above 70 °C case temperature.

Key Specifications

Pinout & Package

PTF240101S is housed in the H-32259-2 thermally-enhanced surface-mount package, featuring an exposed drain pad for direct thermal attachment to heatsinks or PCB copper planes. The package includes three terminals: Drain (D), Gate (G), and Source (S), with the drain electrically and thermally connected to the metalized bottom surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with the PTF240101S, the MRFE6VP61K25H offers greater power headroom and thermal efficiency but demands more complex biasing and layout; the MRF6VP11KH trades ruggedness and output for higher gain and smaller footprint in lower-power deployments.

Availability

PTF240101S is available at Aetrix Electronics and suitable for CDMA2000 base stations, WiMAX access points, and 2.6 GHz LTE Band 7 infrastructure requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for PTF240101S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power solutions for wireless infrastructure.

The PTF240101S belongs to Infineon's GOLDMOS® LDMOS FET product line, engineered specifically for high-reliability, high-efficiency RF power amplification in 2–3 GHz cellular and broadband wireless base stations.

FAQ

What is the recommended gate bias voltage for linear CDMA2000 operation?

The datasheet specifies VGS = 2.5–4.0 V (typical 3.2 V) at IDQ = 180 mA for CDMA2000 operation. A stable, low-noise +3.3 V gate bias supply with <10 mV ripple is recommended to maintain ACPR and IMD performance. External gate resistors (e.g., 10 Ω) should be used to suppress VHF/UHF oscillations.

Can PTF240101S be used in pulsed radar applications?

No-this device is characterized and qualified only for continuous-wave and modulated communication waveforms (CDMA2000, WiMAX, LTE). Its thermal time constants, gate charge behavior, and reliability testing do not cover radar pulse profiles (e.g., µs pulses, high duty cycles), and no pulsed-RF specifications are published.

Is the H-32259-2 package lead-free compatible with standard Pb-free reflow profiles?

Yes-the PTF240101S is RoHS-compliant and qualified for JEDEC J-STD-020D Level 3 (MSL3) reflow. Peak temperature must not exceed 260 °C, with time above 217 °C limited to 60–150 seconds. Preheat ramp rate ≤3 °C/s and cooling rate ≤6 °C/s are required to avoid solder joint cracking or die attach voiding.

Does the device require external input/output matching networks?

Yes-while internally matched for broadband 2.4–2.7 GHz operation, the reference circuit (DS Rev. 05, p.5) shows discrete microstrip lines and shunt capacitors for optimal 50 Ω transformation. The provided Z-source/Z-load data enables custom matching for specific PA topology (e.g., Doherty, balanced) and PCB stack-up.