Infineon Technologies PTFA071701EV4R250XTMA1

Overview

PTFA071701EV4R250XTMA1 from Infineon is a 170 W, 725–770 MHz thermally-enhanced LDMOS RF power transistor in H-36248-2 slotted-flange ceramic open-cavity package, optimized for cellular base station power amplifiers. It delivers 18.5 dB typical gain, 46% typical drain efficiency at 150 W PEP, and –29.5 dBc IM5 under two-tone conditions (765 MHz, 30 V, 900 mA).

For engineers reviewing the PTFA071701EV4R250XTMA1 datasheet, PTFA071701EV4R250XTMA1 pinout, PTFA071701EV4R250XTMA1 application, or PTFA071701EV4R250XTMA1 equivalent, this device supports high-linearity WCDMA/CDMA2000 macrocell PA designs requiring robust VSWR tolerance (10:1 @ 30 V, 170 W CW), integrated ESD protection (HBM Class 2), and low HCI drift.

Technical Context

This LDMOS FET operates as a single-ended RF power amplifier stage with fixed gate bias (V_GS = 2.48 V typ. at I_DQ = 1.0 A), designed for broadband matching from 725–770 MHz without external input/output tuning networks. Its internal matching enables simplified PCB layout in macrocell transceiver modules.

The device uses Infineon's advanced LDMOS process to achieve R_θJC = 0.38 °C/W and T_J = 200 °C max, enabling stable operation at 70 °C case temperature under full 170 W CW load. Drain-source breakdown voltage is rated at 65 V, supporting safe margin over 30 V rail operation.

Key Specifications

Pinout & Package

PTFA071701EV4R250XTMA1 is housed in the H-36248-2 thermally-enhanced ceramic open-cavity package with slotted flange for mechanical mounting and thermal interface to heatsink. The package features gold-plated leads (1.14 ± 0.38 µm) and a copper-tungsten base for low thermal resistance (R_θJC = 0.38 °C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA071701FV4R250XTMA1, the subject part offers superior thermal interface compatibility with legacy slotted-flange heatsinks; versus CGHV1F0175F, it provides plug-and-play replacement in existing LDMOS-based PA designs without gate drive redesign or ESD circuit changes.

Availability

PTFA071701EV4R250XTMA1 is available at Aetrix Electronics and suitable for macrocell base station PA, WCDMA transmitter modules, and public safety radio infrastructure requiring stable component supply and long-term obsolescence management.

Supply support for PTFA071701EV4R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power solutions for wireless infrastructure.

This device belongs to Infineon's PTFA family of thermally-optimized LDMOS transistors, engineered specifically for 700–960 MHz macrocell and small-cell base station power amplifiers demanding high ruggedness and linearity.

FAQ

What is the recommended gate bias voltage for PTFA071701EV4R250XTMA1 in Class AB operation?

The datasheet specifies V_GS = 2.48 V typical at I_DQ = 1.0 A and V_DD = 30 V. For production use, bias should be set between 2.0 V and 3.0 V (min/max) with tight tolerance (<±20 mV) to maintain gain stability and minimize thermal drift across temperature.

Can PTFA071701EV4R250XTMA1 operate safely at 32 V drain supply?

Yes-maximum drain-source voltage is rated at 65 V, and CW performance curves show stable operation at 32 V. However, drain efficiency drops slightly (to ~53%) and thermal load increases; derating to 155 W PEP is advised to maintain junction temperature ≤200 °C at 70 °C case.

Is external input matching required for 765 MHz two-tone operation?

No-internal broadband matching covers 725–770 MHz. The reference circuit shows no input matching components; only a 50 Ω source impedance and gate DC feed choke are needed. Input return loss exceeds –10 dB across the band per typical performance plots.

What is the maximum allowable case temperature during 170 W CW operation?

At 170 W CW, the datasheet specifies R_θJC = 0.38 °C/W and T_J ≤ 200 °C. Therefore, maximum case temperature is 70 °C (200 – 0.38 × 170). Operation above 70 °C requires active cooling or power derating to prevent thermal runaway.