Infineon Technologies PTFA071701EV4XWSA1

Overview

PTFA071701EV4XWSA1 from Infineon is a 170 W, 725–770 MHz thermally-enhanced LDMOS RF power transistor in an H-36248-2 open-cavity ceramic package, designed for cellular base station power amplifiers. It delivers 18.7 dB typical gain, 46% drain efficiency at 150 W PEP, and –29.5 dBc IM7 under two-tone conditions (765 MHz, 30 V, 900 mA).

For engineers reviewing the PTFA071701EV4XWSA1 datasheet, PTFA071701EV4XWSA1 pinout, PTFA071701EV4XWSA1 application, or PTFA071701EV4XWSA1 equivalent, key selection criteria include broadband internal matching, 10:1 VSWR tolerance at 170 W CW, integrated ESD protection (HBM Class 2), and thermal resistance of 0.38 °C/W at TCASE = 70°C.

Technical Context

This LDMOS FET operates as a high-efficiency final-stage amplifier in macrocell and microcell base stations, biased at 30 V with 900 mA quiescent drain current. Its internal broadband matching eliminates external input/output tuning networks across 725–770 MHz, while the ceramic open-cavity package enables direct heatsink mounting and stable thermal performance up to 200°C junction temperature.

The device supports demanding WCDMA and CDMA2000 signals: it achieves –36 dBc ACPR at 40 W average output (3GPP, 8.1 dB PAR) and delivers 165 W CW output at P–1dB with 62% efficiency at 770 MHz-enabling high linearity and spectral purity in multi-carrier cellular infrastructure.

Key Specifications

Pinout & Package

PTFA071701EV4XWSA1 uses the H-36248-2 thermally-enhanced ceramic open-cavity package with slotted flange and gold-plated leads. The flange serves as the drain terminal and primary thermal path; gate and source are accessed via side-mounted leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA071701FV4XWSA1, the EV4XWSA1 offers superior heatsink contact area via slotted flange but requires mechanical cutouts; versus PD85015-E, it delivers +20 W PEP and 7% higher efficiency at full power, justifying its use in high-density base station deployments.

Availability

PTFA071701EV4XWSA1 is available at Aetrix Electronics and suitable for macrocell base station power amplifiers, public safety repeaters, distributed antenna systems, and CBRS small cell infrastructure requiring stable component supply and long-lifecycle support.

Supply support for PTFA071701EV4XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon carbide and LDMOS RF power transistors for wireless infrastructure.

This part belongs to Infineon's PTFA series of thermally-optimized LDMOS FETs targeting 600–3800 MHz cellular base station amplifiers, engineered for high efficiency, ruggedness, and simplified RF front-end design.

FAQ

What is the maximum safe operating voltage for PTFA071701EV4XWSA1?

The absolute maximum drain-source voltage (V_DSS) is 65 V, but the device is characterized and qualified for continuous operation at 30 V DC supply. Operation above 30 V is not recommended due to reduced reliability margins and increased risk of thermal runaway under RF load, even if within V_DSS limits.

Does PTFA071701EV4XWSA1 require external matching components?

No-this device integrates broadband input and output matching networks optimized for 725–770 MHz, enabling direct connection to 50 Ω source and load impedances. External matching is only needed for frequency extension outside this band or for fine-tuning specific linearity targets in production.

How is thermal management implemented in the H-36248-2 package?

The flange serves as both the drain terminal and primary thermal conduction path. It must be mounted with thermal compound and mechanical torque (recommended 10–12 in·lb) to a copper or aluminum heatsink. The 0.38 °C/W R_θJC rating assumes full flange contact area and proper surface finish (Ra ≤ 0.8 µm).

Can PTFA071701EV4XWSA1 be used in pulsed-RF applications?

Yes-the device supports pulsed operation with peak power up to 170 W, provided duty cycle and pulse width remain within thermal limits defined by R_θJC and case temperature. Pulse testing data shows stable gain and efficiency down to 10% duty cycle at 770 MHz, with no observed gate lag or memory effects.