Infineon Technologies PTFA071701FV4R250XTMA1

Overview

PTFA071701FV4R250XTMA1 from Infineon is a 170 W, 725–770 MHz LDMOS RF power transistor in an H-37248-2 earless flange package, designed for cellular base station power amplifiers. It delivers 165 W CW output at P–1dB, 62% drain efficiency at 770 MHz, and –50 dBc ACPR under CDMA2000 conditions with 35 W average output.

For engineers reviewing the PTFA071701FV4R250XTMA1 datasheet, PTFA071701FV4R250XTMA1 pinout, PTFA071701FV4R250XTMA1 application, or PTFA071701FV4R250XTMA1 equivalent, key selection criteria include broadband internal matching (725–770 MHz), 10:1 VSWR ruggedness at 30 V/170 W CW, thermal resistance of 0.38 °C/W, and integrated Class 2 HBM ESD protection.

Technical Context

This LDMOS FET operates as a high-efficiency final-stage amplifier in macrocell and microcell base station transmitters. Its thermally-enhanced ceramic open-cavity package enables stable operation at junction temperatures up to 200 °C, while internal input/output matching simplifies PCB layout in 725–770 MHz band applications.

The device supports both CW and modulated signals including WCDMA and CDMA2000, delivering 32% drain efficiency at 40 W average output (3GPP signal, 8.1 dB PAR) and –36 dBc ACPR. Gate threshold voltage is 2.48 V typical at IDQ = 1.0 A, with RDS(on) of 0.07 Ω enabling low conduction loss.

Key Specifications

Pinout & Package

PTFA071701FV4R250XTMA1 uses the H-37248-2 earless flange, single-ended ceramic open-cavity package. The metal flange serves as the source terminal and thermal path; drain and gate are accessed via solderable leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA071701FV4R250XTMA1, the PTFA071701E offers identical RF performance but less efficient thermal transfer, while PD85015-E trades integration for flexibility and lower peak power-making PTFA071701F optimal for space- and thermal-constrained macrocell PA modules.

Availability

PTFA071701FV4R250XTMA1 is available at Aetrix Electronics and suitable for macrocell base station power amplifiers, remote radio heads, WCDMA infrastructure transmitters, and multi-standard cellular BTS requiring stable component supply and long-term lifecycle support.

Supply support for PTFA071701FV4R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power transistors for telecom infrastructure.

This part belongs to Infineon's PTFA series of thermally enhanced LDMOS FETs, engineered specifically for high-efficiency, broadband cellular base station power amplifiers operating in sub-1 GHz frequency bands.

FAQ

What is the maximum continuous drain current rating for PTFA071701FV4R250XTMA1?

The device does not specify a maximum continuous drain current (ID) rating; instead, it defines safe operating limits via maximum drain-source voltage (65 V), junction temperature (200 °C), and thermal resistance (0.38 °C/W). At 30 V VDD and 170 W CW output, average drain current is approximately 5.7 A, but actual current depends on modulation and duty cycle. Designers must ensure junction temperature remains ≤200 °C under worst-case thermal conditions.

Does PTFA071701FV4R250XTMA1 require external gate bias circuitry?

Yes-while the device has a typical gate threshold voltage of 2.48 V at IDQ = 1.0 A, it requires a stable, low-noise, current-limited DC bias supply capable of delivering ~1 mA gate current. The reference design uses resistor-divider biasing with decoupling capacitors (C2, C3); active bias controllers are recommended for temperature-stable quiescent current in production systems.

Can PTFA071701FV4R250XTMA1 be used outside the 725–770 MHz band?

No-its internal matching network is optimized exclusively for 725–770 MHz. Operation outside this band results in degraded gain, efficiency, and return loss; datasheet measurements confirm usable performance only within this range. For wider bandwidth or alternate bands, Infineon's PTFA09200x or PDxx series should be evaluated.

What is the recommended PCB material and thickness for the reference circuit?

The reference design specifies Rogers RO4350B laminate, 0.76 mm (0.030") thick, with εr = 3.48 and 1 oz. copper. This material ensures controlled impedance for microstrip matching networks (e.g., l1–l12) and minimizes dielectric loss at 770 MHz. Substituting FR-4 is not recommended due to higher loss tangent and εr variation, which degrades gain flatness and efficiency.