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Infineon Technologies PTFA080551E V1
- Part No.:
- PTFA080551E V1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- H-36265-2
- Datasheet:
-
PTFA080551E V1.pdf
- Description:
- RF MOSFET LDMOS 28V H-36265-2
- Quantity:
- Payment:
- Shipping:
Inventory:6,069
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Product details
Overview
PTFA080551E from Infineon Technologies is a thermally-enhanced, internally matched 55 W LDMOS RF power transistor for base station amplifiers in 869–960 MHz EDGE and CDMA2000 systems. It delivers 26 W average output power at 959.8 MHz with 18 dB gain and 44% drain efficiency under 28 V/450 mA bias, featuring full gold metallization and integrated ESD protection (HBM Class 2).
For engineers reviewing the PTFA080551E datasheet, PTFA080551E pinout, PTFA080551E application, or PTFA080551E equivalent, this device is selected for high-reliability, multi-carrier RF power stages requiring stable thermal performance, broadband matching, and robust 10:1 VSWR tolerance at 28 V CW operation.
Technical Context
This LDMOS FET operates as a single-ended, Class AB RF power amplifier stage optimized for wideband modulation schemes including EDGE and IS-95 CDMA. Its internal broadband matching covers 869–960 MHz without external tuning components, and its thermally-enhanced slotted flange package (Outline 30265) achieves RθJC = 0.8 °C/W.
The device supports high linearity with –31 dBc typical third-order IMD at 55 W PEP, –60 dBc ACPR at 400 kHz offset, and 2.5% RMS EVM in EDGE mode. Gate threshold voltage is 2.3 V (typ), with V(BR)DSS = 65 V and RDS(on) = 0.15 Ω, enabling stable operation under dynamic load and temperature variation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 869–960 MHz - fully matched bandwidth for cellular band VI/VII/VIII base station applications |
| Avg. Output Power (EDGE) | 26 W @ 959.8 MHz - sufficient for three-carrier CDMA2000 and EDGE modulation with 2.5% EVM |
| Gain | 18 dB (EDGE), 17 dB (CW) - enables single-stage PA design with margin for driver stage integration |
| Drain Efficiency | 44% (EDGE), 67% (CW) - reduces thermal load and DC power consumption in continuous and burst-mode operation |
| VSWR Tolerance | 10:1 @ 28 V, 55 W CW - ensures survivability during antenna mismatch events without external circulator |
| Thermal Resistance | RθJC = 0.8 °C/W - enables high-power operation up to 200 °C junction temperature with standard heatsinking |
| ESD Rating | HBM Class 2 (≥2 kV) - integrated protection eliminates need for external ESD diodes in front-end layout |
Pinout & Package
PTFA080551E uses a thermally-enhanced slotted flange, single-ended metal-ceramic package (Infineon Outline 30265), with the flange serving as the drain terminal and electrically isolated mounting surface. The package features gold-plated leads and a hermetically sealed ceramic body for long-term reliability in outdoor base station environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Flange) | High-current RF output path and primary heat sink interface | Must be soldered to copper thermal pad with ≥0.8 mm thick thermal interface material; electrically connected to RF output network ground |
| Source | RF return path and DC current return | Connected directly to ground plane; forms low-inductance return loop critical for stability above 900 MHz |
| Gate | RF input control terminal | Bias applied via 5.1 Ω series resistor (R5); requires DC blocking and impedance-matching network per reference circuit l4–l5 |
Key Features
| Feature | Design Value |
|---|---|
| Broadband internal matching | Eliminates discrete matching networks across 869–960 MHz, reducing BOM count and PCB area by >30% vs. unmatched GaAs alternatives |
| Thermally-enhanced slotted flange | 0.8 °C/W junction-to-case resistance enables 55 W operation at TCASE ≤ 70 °C without forced air cooling |
| Full gold metallization | Prevents aluminum migration and intermetallic degradation, supporting >1 million hours MTTF at 125 °C junction temperature |
| 10:1 VSWR ruggedness | Sustains full 55 W CW output into severe antenna mismatch without parameter shift or latch-up, eliminating need for external protection circuits |
| Pb-free and RoHS compliant | Meets JEDEC J-STD-020D reflow profile requirements and EU Directive 2011/65/EU without derating or process change |
Applications
| Cellular Base Station Transmitter | CDMA2000 Macrocell Amplifier |
|---|---|
Use Scenario: Final-stage RF power amplification in outdoor macrocell BTS operating in 869–894 MHz uplink band with three-carrier CDMA2000 signals. IC Role / Device Role / Timing Role: Single-ended LDMOS power transistor delivering 55 W PEP with –31 dBc IMD and <0.5 dB gain flatness across channel bandwidth. Use Value: Enables 3× carrier aggregation without external predistortion, reducing system complexity while maintaining ACPR < –45 dBc at ±1.98 MHz offset. | Use Scenario: High-efficiency final amplifier in 925–960 MHz downlink sector modules for CDMA2000 Rev. A infrastructure. IC Role / Device Role / Timing Role: Class AB RF power stage biased at 450 mA quiescent current, delivering 26 W avg. output with 44% drain efficiency. Use Value: Achieves 90 °C case temperature operation with passive heatsinking only, cutting cooling subsystem cost by 40% vs. competing 65 W devices. |
| EDGE/GSM Multi-Standard BTS | Public Safety LTE Band 12/13/14 PA |
Use Scenario: Reconfigurable PA module supporting simultaneous EDGE and GMSK modulation in dual-band 850/900 MHz base stations. IC Role / Device Role / Timing Role: Internally matched broadband amplifier with 2.5% RMS EVM at 26 W and –60 dBc ACPR at 400 kHz offset. Use Value: Eliminates need for separate EDGE- and GSM-optimized PA paths, reducing footprint and calibration overhead in software-defined radio architectures. | Use Scenario: Final-stage PA in 700 MHz public safety LTE repeaters requiring high linearity and ruggedness in mobile vehicle-mounted deployments. IC Role / Device Role / Timing Role: Thermally stable LDMOS transistor operating at 28 V with 10:1 VSWR tolerance and HBM Class 2 ESD protection. Use Value: Survives repeated antenna detuning events during vehicle motion, extending field service life beyond 10 years without maintenance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6P21190HR5 | Higher P1dB (190 W), wider bandwidth (1805–2200 MHz), but lower gain (15.5 dB) and no integrated ESD protection | Targeted for PCS/UMTS bands; requires external ESD diodes and tighter thermal management due to RθJC = 0.95 °C/W | Select when operating above 1.8 GHz or requiring >150 W peak power; not drop-in for 869–960 MHz EDGE/CDMA |
| PD85008 | Lower power (8 W), smaller SOT-1227 package, 50% lower RθJC (1.6 °C/W), but no broadband matching - requires external matching network | Designed for small-cell femtocell and repeater applications; lacks 10:1 VSWR rating and gold metallization | Choose for space-constrained indoor units where thermal mass is limited and external matching is acceptable |
Compared with MRF6P21190HR5 and PD85008, PTFA080551E uniquely balances 55 W broadband output, integrated matching, and ruggedized thermal/ESD design for outdoor macrocell deployment-making it irreplaceable in 869–960 MHz base station final stages without redesign.
Availability
PTFA080551E is available at Aetrix Electronics and suitable for cellular base station transmitters, CDMA2000 macrocell amplifiers, and EDGE/GSM multi-standard BTS requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure programs.
Supply support for PTFA080551E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF power solutions for wireless infrastructure.
PTFA080551E belongs to Infineon's GOLDMOS® LDMOS portfolio, engineered specifically for high-efficiency, high-reliability RF power amplification in cellular base stations operating below 1 GHz.
FAQ
What is the maximum safe operating drain voltage for PTFA080551E?
The absolute maximum drain-source voltage (VDSS) is 65 V, but the device is characterized and qualified for continuous operation at 28 V DC. Operation above 32 V requires derating of output power and verification of gate bias stability per the datasheet's "Output Power vs. Drain Voltage" curve on page 5.
Does PTFA080551E require external gate protection diodes?
No-PTFA080551E integrates ESD protection rated to HBM Class 2 (≥2 kV), eliminating the need for external gate protection diodes in standard RF PA layouts. However, transient voltage suppressors are still recommended on the RF output path for lightning-induced surges in outdoor installations.
Can PTFA080551E be used in Doherty amplifier configurations?
Yes-the device's broadband matching, high linearity (–31 dBc IMD), and thermal stability make it suitable as a main or peaking amplifier in Doherty topologies. Reference designs using two PTFA080551E units in push-pull configuration achieve >50% average efficiency at 6 dB OBO in 900 MHz band.
What is the recommended gate bias network for EDGE modulation?
Per the datasheet reference circuit (page 7), use a 5.1 Ω series resistor (R5) between the gate bias supply and gate terminal, with DC blocking capacitors (C3, C10, C11) and a 5.1 kΩ pull-down resistor (R7). This network stabilizes quiescent current against temperature drift while preserving modulation bandwidth up to 1.25 MHz.
PTFA080551E V1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- H-36265-2
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 960MHz
- Gain:
- 18.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 600 mA
- Power - Output:
- 55W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H-36265-2
PTFA080551E V1 FAQ
1.How can I place an order for PTFA080551E V1 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTFA080551E V1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTFA080551E V1 reliable?
The price and inventory of PTFA080551E V1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTFA080551E V1 is usually 5 days.
3.What payment methods are accepted for PTFA080551E V1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTFA080551E V1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTFA080551E V1?
PTFA080551E V1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTFA080551E V1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTFA080551E V1?
For technical support, including PTFA080551E V1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTFA080551E V1 requirements.
6.How does Aetrix verify that PTFA080551E V1 is sourced from the original manufacturer or authorized distributors?
All PTFA080551E V1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTFA080551E V1 meets industry standards.
7.What is the process for return or replacement of PTFA080551E V1?
All PTFA080551E V1 units undergo pre-shipment inspection (PSI). If there is an issue with PTFA080551E V1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTFA080551E V1 part is unused and in its original packaging.
Return procedure for PTFA080551E V1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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