Infineon Technologies PTFA080551F V1

Overview

PTFA080551F from Infineon is a 55 W thermally-enhanced LDMOS RF power transistor for base station amplifiers in 869–960 MHz CDMA and EDGE systems, operating at 28 V with 450 mA quiescent drain current, delivering 26 W average output power, 18 dB gain, and 44% drain efficiency under EDGE modulation.

For engineers reviewing the PTFA080551F datasheet, PTFA080551F pinout, PTFA080551F application, or PTFA080551F equivalent, this device requires attention to thermal interface design, broadband impedance matching (Z_source ≈ 6 Ω –j5.6 Ω / Z_load ≈ 4.9 Ω +j0.9 Ω at 960 MHz), VSWR tolerance (10:1 @ 55 W CW), and gate bias stability across temperature.

Technical Context

This LDMOS FET employs a single-ended, slotted-flange-compatible package (Outline 31265) with full gold metallization and integrated ESD protection (HBM Class 2). Its internal matching enables broadband operation without external input matching networks across 869–960 MHz.

Designed for high-linearity, multi-carrier CDMA2000 and EDGE base station final-stage amplification, it delivers –31 dBc third-order IMD at 55 W PEP and maintains <2.5% RMS EVM at 26 W average output under 959.8 MHz EDGE modulation with 400 kHz/600 kHz ACPR of –60 dBc/–75 dBc.

Key Specifications

Pinout & Package

PTFA080551F uses thermally-enhanced earless flange package (Outline 31265), with metalized flange serving as drain terminal and thermal path. The package features three leads: Gate (G), Source (S), Drain (D).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6P20140HR5 and PD57018-E, PTFA080551F uniquely balances 55 W broadband linearity, 10:1 VSWR ruggedness, and integrated ESD protection-making it optimal for cost-sensitive, high-reliability 900 MHz macrocell deployments where thermal and mismatch resilience are non-negotiable.

Availability

PTFA080551F is available at Aetrix Electronics and suitable for CDMA2000 base station power amplifiers, EDGE macrocell transmitters, and high-VSWR antenna system PAs requiring stable component supply across extended production lifecycles.

Supply support for PTFA080551F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-voltage and high-frequency silicon and GaN solutions.

The PTFA series belongs to Infineon's GOLDMOS® LDMOS product line, engineered specifically for cellular infrastructure power amplifiers demanding high reliability, broadband linearity, and thermal robustness in 700–2700 MHz base station applications.

FAQ

What is the recommended gate bias voltage for PTFA080551F in EDGE operation?

The datasheet specifies a typical gate-source voltage of 2.3 V at V_DD = 28 V and I_DQ = 450 mA. This value is temperature-stable within ±3% from –20°C to +100°C case temperature, and must be set using a low-noise, low-drift bias network to maintain EVM <2.5% under 8-PSK modulation.

Can PTFA080551F be used in Doherty amplifier configurations?

Yes-its broadband internal matching, symmetric gain compression, and 0.8 °C/W thermal resistance make it suitable as a main or peaking amplifier in Doherty topologies. Application Note AN331 from Infineon provides layout guidelines and load-pull data for 960 MHz Doherty implementation with this device.

What is the maximum safe operating junction temperature?

The absolute maximum junction temperature is 200°C, but the device is characterized and qualified for continuous operation up to T_J = 175°C. Derating begins above T_CASE = 70°C at 1.25 W/°C, and thermal design must ensure T_J ≤ 175°C under worst-case RF and ambient conditions.

Does PTFA080551F require external input matching networks?

No-its internal broadband matching covers 869–960 MHz with <0.5 dB gain variation, eliminating discrete input matching components. However, output matching remains application-specific; the datasheet provides Z_source and Z_load impedances at 960 MHz to guide external output network design.