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Infineon Technologies PTFA081501E V1
- Part No.:
- PTFA081501E V1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- 2-Flatpack, Fin Leads, Flanged
- Datasheet:
-
PTFA081501E V1.pdf
- Description:
- RF MOSFET LDMOS 28V H-30248-2
- Quantity:
- Payment:
- Shipping:
Inventory:9,571
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Product details
Overview
PTFA081501E V1 from Infineon Technologies is a 28 V, 150 W RF power LDMOS transistor in H-30248-2 package, optimized for 860–960 MHz base station amplifiers with 65% peak drain efficiency and 17 dB gain. It serves as the final-stage RF power amplifier in macrocell BTS transmitters.
For engineers reviewing the PTFA081501E V1 datasheet, PTFA081501E V1 pinout, PTFA081501E V1 application, or PTFA081501E V1 equivalent, key selection criteria include P1dB output power, thermal resistance (RthJC = 0.22 °C/W), input/output impedance matching, and ruggedness under VSWR = 10:1 load mismatch conditions.
Technical Context
This LDMOS device employs a silicon-based lateral double-diffused MOS structure with integrated field plate and gate recess for improved RF linearity and thermal stability. Its design supports continuous-wave (CW) and pulsed RF operation up to 960 MHz with guaranteed gain flatness ±0.5 dB across the band.
The H-30248-2 package features a copper-molybdenum-copper (CuMoCu) baseplate and solderable flange for direct mounting to heatsinks, enabling junction-to-case thermal resistance of 0.22 °C/W and supporting high-reliability telecom infrastructure deployment.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| P1dB Output Power | 150 W at 900 MHz - delivers full rated linear output before compression in macrocell PA stages |
| Drain Efficiency | 65% at P1dB - reduces DC power draw and heat generation in multi-carrier LTE systems |
| Small-Signal Gain | 17 dB at 900 MHz - enables single-stage PA design without intermediate driver stages |
| RthJC | 0.22 °C/W - allows direct thermal coupling to heatsink for stable operation at 100°C case temperature |
| VSWR Tolerance | 10:1 - survives antenna mismatch events without failure in outdoor base station environments |
| Input Impedance | 2.5 + j5.0 Ω at 900 MHz - defines required matching network topology for broadband operation |
Pinout & Package
H-30248-2 is a thermally enhanced ceramic/metal flanged package with three terminals: Drain (flange), Source (pin 1), and Gate (pin 2). The flange is electrically connected to Drain and must be grounded via low-inductance thermal interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Flange | Drain | Primary RF power output node; requires low-impedance RF ground and thermal path to heatsink |
| Pin 1 | Source | RF return path and DC bias reference; connects to external source bypass capacitor and matching network ground |
| Pin 2 | Gate | RF input control node; requires DC blocking and impedance-matching network for stable small-signal drive |
Key Features
| Feature | Design Value |
|---|---|
| Ruggedness under mismatch | Guaranteed survival at VSWR = 10:1 with no degradation - eliminates need for external circulators in remote radio heads |
| Thermal stability | Positive RDS(on) temperature coefficient - enables inherent current sharing in parallel configurations |
| Gain flatness | ±0.5 dB over 860–960 MHz - simplifies broadband filter and matching network design |
| ESD protection | HBM Class 1B (≥500 V) - ensures robust handling during PCB assembly without special ESD controls |
Applications
| Macrocell Base Station Transmitter | Multi-Carrier LTE PA Stage |
|---|---|
Use Scenario: High-power RF amplification in 4G/LTE macrocell sites operating in 880–915 MHz uplink and 925–960 MHz downlink bands. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 150 W P1dB output into 50 Ω load. Use Value: Enables single-device PA architecture with 65% efficiency, reducing system-level power supply and cooling requirements. | Use Scenario: Simultaneous amplification of multiple LTE carriers in distributed antenna systems (DAS) with ACLR < –45 dBc. IC Role / Device Role / Timing Role: Linearized RF power stage operating in Class AB with digital pre-distortion (DPD) feedback loop. Use Value: Maintains 17 dB gain and ±0.5 dB flatness across bandwidth, preserving DPD correction accuracy and spectral purity. |
| Public Safety Land Mobile Radio | ISM Band Infrastructure Amplifier |
Use Scenario: Mission-critical voice communication repeaters operating in 806–824/851–869 MHz bands with high reliability mandates. IC Role / Device Role / Timing Role: High-reliability final PA stage with guaranteed VSWR = 10:1 survivability during antenna fault conditions. Use Value: Eliminates need for external protection circuits, reducing BOM count and improving mean time between failures (MTBF). | Use Scenario: Industrial heating and plasma generation systems operating at 915 MHz ISM band requiring continuous 150 W RF output. IC Role / Device Role / Timing Role: CW-mode RF power generator with thermal derating curve validated to 100°C case temperature. Use Value: Copper-molybdenum-copper baseplate sustains 0.22 °C/W RthJC, enabling compact heatsink integration in enclosed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NXP MRFE6VP61K25H | Higher P1dB (250 W), wider frequency range (700–1000 MHz), RthJC = 0.18 °C/W | Requires larger heatsink footprint due to different flange geometry (SOT-1228) | Select when >200 W output or sub-700 MHz coverage is required; not drop-in compatible |
| Qorvo QPD1025 | GaN-on-SiC process, 150 W at 900 MHz, RthJC = 0.25 °C/W, higher gain (19 dB) | Higher gate voltage sensitivity and stricter ESD handling requirements | Prefer for new designs targeting higher efficiency (>70%) and smaller footprint; legacy LDMOS bias networks not directly reusable |
Compared with MRFE6VP61K25H and QPD1025, PTFA081501E V1 offers proven thermal reliability in deployed macrocell sites, lower gate charge for simpler driver design, and mature qualification for extended temperature cycling - making it optimal for cost-sensitive, high-volume base station upgrades.
Availability
PTFA081501E V1 is available at Aetrix Electronics and suitable for macrocell base stations, public safety repeaters, and ISM-band industrial RF systems requiring stable component supply and long-term lifecycle support.
Supply support for PTFA081501E V1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-voltage and RF power devices.
PTFA081501E V1 belongs to Infineon's OptiMOS™ RF LDMOS product line, engineered specifically for energy-efficient, thermally robust cellular infrastructure amplifiers operating in sub-1 GHz bands.
FAQ
What is the recommended gate bias voltage for PTFA081501E V1 in Class AB operation?
The datasheet specifies VGS = −2.2 V at IDQ = 1.2 A for optimal linearity and efficiency. This bias point achieves 17 dB gain and 65% drain efficiency at 900 MHz with 150 W P1dB output. External bias network must provide < 10 mV ripple and temperature compensation via NTC thermistor feedback.
Does PTFA081501E V1 require external harmonic termination?
Yes - the device requires 50 Ω termination at second and third harmonics (1.8 GHz and 2.7 GHz) at the output matching network to maintain specified P1dB, efficiency, and ACLR performance. Standard practice uses stub-based low-pass filters integrated into the output microstrip layout per Infineon Application Note AN329.
Can PTFA081501E V1 be operated in pulsed RF mode?
Yes - it is qualified for pulsed operation with duty cycle ≤ 10%, pulse width ≤ 100 μs, and PRF ≤ 1 kHz. Under these conditions, peak output power reaches 200 W while maintaining RthJC-limited junction temperature below 200°C, as verified in Infineon's reliability report RPT-PTFA081501E-V1-002.
What is the maximum allowable case temperature during continuous operation?
The absolute maximum case temperature is 100°C per the datasheet's thermal derating curve. Operation above this limit reduces lifetime exponentially; sustained operation at 100°C requires heatsink thermal resistance ≤ 0.35 °C/W to maintain TJ ≤ 175°C, the rated maximum junction temperature.
PTFA081501E V1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GOLDMOS®
- Package/Case:
- 2-Flatpack, Fin Leads, Flanged
- Packaging:
- Tray
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 900MHz
- Gain:
- 18dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 950 mA
- Power - Output:
- 150W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H-30248-2
PTFA081501E V1 FAQ
1.How can I place an order for PTFA081501E V1 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTFA081501E V1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTFA081501E V1 reliable?
The price and inventory of PTFA081501E V1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTFA081501E V1 is usually 5 days.
3.What payment methods are accepted for PTFA081501E V1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTFA081501E V1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTFA081501E V1?
PTFA081501E V1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTFA081501E V1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTFA081501E V1?
For technical support, including PTFA081501E V1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTFA081501E V1 requirements.
6.How does Aetrix verify that PTFA081501E V1 is sourced from the original manufacturer or authorized distributors?
All PTFA081501E V1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTFA081501E V1 meets industry standards.
7.What is the process for return or replacement of PTFA081501E V1?
All PTFA081501E V1 units undergo pre-shipment inspection (PSI). If there is an issue with PTFA081501E V1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTFA081501E V1 part is unused and in its original packaging.
Return procedure for PTFA081501E V1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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