Infineon Technologies PTFA082201E V1

Overview

PTFA082201E from Infineon is a 220 W thermally-enhanced LDMOS RF power transistor for CDMA/WCDMA base station power amplifiers operating at 869–894 MHz. It delivers 55 W average output power with 18.0 dB linear gain, 30% drain efficiency, and –37 dBc intermodulation distortion under two-carrier WCDMA conditions (30 V, 1950 mA, 894 MHz).

For engineers reviewing the PTFA082201E datasheet, PTFA082201E pinout, PTFA082201E application, or PTFA082201E equivalent, this device is selected for high-efficiency, broadband RF power stages in cellular infrastructure where thermal stability, VSWR ruggedness (10:1 at 220 W CW), and integrated ESD protection (HBM Class 2) are critical.

Technical Context

This LDMOS FET operates as a single-ended RF power amplifier stage with fixed gate bias (V_GS = 2.0–3.0 V at I_DQ = 1950 mA) and requires external broadband matching networks. Its internal structure supports high peak-envelope-power handling (250 W P–1dB CW) and exhibits low HCI drift and excellent thermal stability up to T_J = 200 °C.

The H-36260-2 package integrates a slotted flange for enhanced heatsinking (R_θJC = 0.25 °C/W at 220 W), gold-plated drain/source/gate terminals, and is Pb-free/RoHS compliant. It is characterized for 3GPP-compliant WCDMA signals with 8.1 dB PAPR and 3.84 MHz channel bandwidth.

Key Specifications

Pinout & Package

Package: H-36260-2 - thermally-enhanced slotted-flange metal-ceramic package with gold-plated leads and flange; 22.35 mm × 23.37 mm footprint; designed for forced-air or liquid-cooled heatsink mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA082201F and PD85008TR, the PTFA082201E offers the highest thermal conductivity and best WCDMA linearity in its native 869–894 MHz band-making it optimal for high-reliability macrocell deployments where efficiency and ruggedness are non-negotiable.

Availability

PTFA082201E is available at Aetrix Electronics and suitable for macrocell base station power amplifiers, CDMA/WCDMA infrastructure equipment, and multi-carrier cellular radio units requiring stable component supply and long-term lifecycle support.

Supply support for PTFA082201E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-voltage and RF power devices.

The PTFA series belongs to Infineon's thermally-optimized LDMOS RF transistor product line, engineered specifically for cellular infrastructure applications demanding high efficiency, ruggedness, and broadband linearity in 700–2700 MHz bands.

FAQ

What is the maximum continuous drain current rating for PTFA082201E?

The device does not specify a maximum continuous drain current rating independent of thermal conditions. Instead, it is rated for 220 W CW output at T_CASE = 70 °C, corresponding to ~1950 mA quiescent drain current (I_DQ) under typical 30 V bias. Sustained operation above this requires active cooling to maintain T_J ≤ 200 °C per derating curve (4.0 W/°C above 25 °C).

Can PTFA082201E be used in Doherty amplifier configurations?

Yes-its high gain (18.0 dB), low output impedance, and robust VSWR tolerance (10:1) make it suitable as a main or peaking amplifier in Doherty architectures. The H-36260-2 package's thermal performance supports asymmetric drive and pulsed operation, though external gate bias sequencing must be implemented to manage turn-on timing alignment.

Is the PTFA082201E pinout compatible with PTFA082201F?

Yes-both share identical pin assignments (D, S, G) and mechanical footprint dimensions (22.35 mm × 23.37 mm). However, PTFA082201E uses a slotted flange while PTFA082201F uses an earless flange; mounting hardware and thermal interface design differ, requiring mechanical validation before interchange.

What is the recommended gate bias network for stable WCDMA operation?

A low-noise, temperature-stable gate bias network is required: use a 2.5 V ±0.1 V regulated source (e.g., LM7805-based with RC filtering), 0.1 µF ceramic bypass capacitor near the gate pad, and a 10 Ω series resistor to dampen parasitic oscillation. Layout must minimize gate loop inductance (<1 nH) and avoid coupling to drain traces per Infineon's reference circuit (DS Rev. 05, p.6).