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Infineon Technologies PTFA082201F V1
- Part No.:
- PTFA082201F V1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- 2-Flatpack, Fin Leads, Flanged
- Datasheet:
-
PTFA082201F V1.pdf
- Description:
- RF MOSFET LDMOS 30V H-37260-2
- Quantity:
- Payment:
- Shipping:
Inventory:2,139
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Product details
Overview
PTFA082201F V1 from Infineon is a 220 W LDMOS RF power transistor designed for CDMA/WCDMA base station power amplifiers operating at 869–894 MHz. It delivers 55 W average output power with 18.0 dB linear gain, 30% drain efficiency, and –37 dBc intermodulation distortion under two-carrier WCDMA conditions (30 V, 1950 mA, 894 MHz). Its H-37260-2 thermally-enhanced earless flange package enables high-power RF operation in macrocell infrastructure.
For engineers reviewing the PTFA082201F V1 datasheet, PTFA082201F V1 pinout, PTFA082201F V1 application, or PTFA082201F V1 equivalent, key selection criteria include broadband internal matching, 10:1 VSWR ruggedness at 220 W CW, integrated Class 2 ESD protection, thermal resistance of 0.25 °C/W, and compatibility with 30 V DC biasing in multi-carrier cellular PA stages.
Technical Context
This device is a single-ended, enhancement-mode N-channel LDMOS FET optimized for high-efficiency, high-linearity RF power amplification in 3G infrastructure. It operates with fixed 30 V drain supply and 1950 mA quiescent current, supporting both CW and modulated signals up to 220 W PEP.
The transistor integrates input/output broadband matching networks and features low HCI drift, excellent thermal stability, and ruggedness against 10:1 VSWR loads without external protection circuitry-enabling simplified PA design in outdoor macro base stations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 869–894 MHz - Matches North American PCS/Cellular band for CDMA/WCDMA base station deployment. |
| Avg. Output Power (2-Carrier WCDMA) | 55 W - Sustains linear operation under real-world 3GPP-compliant signal with 8.1 dB P/A ratio. |
| Linear Gain | 18.0 dB - Enables compact driver-stage architecture with minimal cascaded gain stages. |
| Drain Efficiency | 30% - Reduces heat dissipation and cooling requirements in densely packed RF power modules. |
| Intermodulation Distortion | –37 dBc - Meets spectral mask requirements for adjacent channel leakage in multi-carrier systems. |
| VBRDSS | 65 V - Supports safe operation with 30 V bias and transient voltage margins in RF PA circuits. |
| RθJC | 0.25 °C/W - Enables high-power thermal management using standard heatsink interfaces in H-37260-2 package. |
Pinout & Package
Package: H-37260-2 thermally-enhanced earless flange, metal-ceramic hybrid, gold-plated leads and flange, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | RF Power Output Terminal | Connected to output matching network and heatsink; carries full RF output current and DC bias. |
| S (Source) | RF Ground Reference / Current Return | Low-inductance connection point for source degeneration and thermal path to flange ground plane. |
| G (Gate) | RF Input Control Terminal | High-impedance node requiring stable DC bias (2.5 V typ) and RF input matching network. |
Key Features
| Feature | Design Value |
|---|---|
| Broadband internal matching | Reduces external matching complexity across 869–894 MHz; eliminates discrete tuning components in production PA designs. |
| 10:1 VSWR ruggedness (CW) | Withstands antenna mismatch events at full 220 W output without degradation-critical for outdoor base station reliability. |
| Integrated ESD protection (HBM Class 2) | Eliminates need for external ESD diodes on gate line, simplifying layout and improving RF integrity. |
| Thermally-enhanced earless flange | Enables direct bolt-down mounting to heatsinks with uniform thermal interface pressure and no flange slot stress concentration. |
| Low HCI drift | Maintains gain and efficiency stability over lifetime in continuous high-power operation at elevated junction temperatures. |
Applications
| Macrocell Base Station PA | WCDMA Band-Specific Amplifier |
|---|---|
Use Scenario: High-power RF final stage in outdoor 3G macro base stations covering 869–894 MHz spectrum. IC Role / Device Role / Timing Role: Single-ended RF power transistor delivering 55 W avg. output in two-carrier WCDMA configuration. Use Value: Delivers required linearity (–37 dBc IMD) and efficiency (30%) while surviving 10:1 VSWR events without protection circuitry. |
Use Scenario: Dedicated amplifier module for WCDMA carrier aggregation in legacy 3G infrastructure upgrades. IC Role / Device Role / Timing Role: Primary RF power device biased at 30 V/1950 mA with internal broadband matching. Use Value: Eliminates custom impedance matching networks, reducing BOM count and calibration time in band-specific PA designs. |
| CDMA IS-95 Transmitter PA | Multi-Carrier Cellular Test Fixture |
Use Scenario: Final-stage amplifier in CDMA base station transmitters compliant with IS-95 standards. IC Role / Device Role / Timing Role: High-efficiency LDMOS FET delivering 55 W avg. output with <–40 dBc ACPR at 750 kHz offset. Use Value: Meets stringent adjacent channel power ratio requirements without digital predistortion overhead. |
Use Scenario: Reference device in RF lab test fixtures for validating PA linearity and thermal behavior. IC Role / Device Role / Timing Role: DUT (Device Under Test) in Infineon's standardized characterization fixture at 894 MHz. Use Value: Provides repeatable, production-representative performance data for system-level PA modeling and verification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PTFA082201E V4 | H-36260-2 slotted flange package; identical RF specs but different mechanical mounting interface. | Requires slotted heatsink interface; less suitable for automated bolt-torque assembly than earless flange. | Select when legacy heatsink tooling supports slotted flange or when lower thermal interface resistance is prioritized. |
| PD85004-E | Same frequency band (869–894 MHz), 220 W rating, but 28 V max VDD; lower gain (17.5 dB typ) and higher RθJC (0.31 °C/W). | Designed for lower-voltage PA architectures; requires revised bias network and larger heatsink area. | Choose only if system-level voltage budget restricts to ≤28 V or if alternate supplier qualification is mandatory. |
Compared with PTFA082201F V1, the PTFA082201E V4 offers identical RF performance with mechanical trade-offs in mounting, while PD85004-E sacrifices gain and thermal efficiency to meet lower-voltage system constraints-making PTFA082201F V1 optimal for 30 V, high-ruggedness macro PA designs.
Availability
PTFA082201F V1 is available at Aetrix Electronics and suitable for macrocell base station PA, WCDMA band-specific amplifiers, and CDMA IS-95 transmitter applications requiring stable component supply and long-term lifecycle support.
Supply support for PTFA082201F V1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-performance RF power transistors for wireless infrastructure.
The PTFA series belongs to Infineon's thermally-optimized LDMOS RF power transistor product line, engineered specifically for rugged, high-efficiency cellular base station amplifiers operating in licensed sub-1 GHz bands.
FAQ
What is the maximum continuous drain current for PTFA082201F V1?
The device does not specify a maximum continuous drain current rating. Instead, it defines safe operating conditions via maximum ratings: 65 V VDSS, 200 °C junction temperature, and 700 W total dissipation (derated above 25 °C). Typical operation uses 1950 mA quiescent current at 30 V, with pulsed or modulated RF output limiting average current draw.
Can PTFA082201F V1 be used in 5G NR applications?
No-it is not characterized or qualified for 5G NR bands (e.g., n77/n78/n79). Its RF performance is validated only for 869–894 MHz CDMA/WCDMA, with matching and linearity optimized for 3GPP WCDMA waveforms. 5G NR requires wider bandwidth, higher-order modulation, and different thermal duty cycles not addressed in this device's specification.
Is the H-37260-2 package lead-free and RoHS compliant?
Yes-the datasheet explicitly states "thermally-enhanced packages, Pb-free and RoHS compliant." The gold plating on drain, source, gate leads and flange meets RoHS Directive 2011/65/EU requirements, with no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE content.
Does PTFA082201F V1 require external gate protection diodes?
No-integrated ESD protection satisfies Human Body Model Class 2 (≥2 kV), eliminating need for external gate protection diodes in standard handling and PCB layout. However, robust RF input filtering and stable DC bias sequencing remain essential to prevent gate oxide overstress during power-up/down transients.
PTFA082201F V1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 2-Flatpack, Fin Leads, Flanged
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 894MHz
- Gain:
- 18dB
- Voltage - Test:
- 30 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 1.95 A
- Power - Output:
- 220W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H-37260-2
PTFA082201F V1 FAQ
1.How can I place an order for PTFA082201F V1 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTFA082201F V1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTFA082201F V1 reliable?
The price and inventory of PTFA082201F V1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTFA082201F V1 is usually 5 days.
3.What payment methods are accepted for PTFA082201F V1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTFA082201F V1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTFA082201F V1?
PTFA082201F V1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTFA082201F V1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTFA082201F V1?
For technical support, including PTFA082201F V1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTFA082201F V1 requirements.
6.How does Aetrix verify that PTFA082201F V1 is sourced from the original manufacturer or authorized distributors?
All PTFA082201F V1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTFA082201F V1 meets industry standards.
7.What is the process for return or replacement of PTFA082201F V1?
All PTFA082201F V1 units undergo pre-shipment inspection (PSI). If there is an issue with PTFA082201F V1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTFA082201F V1 part is unused and in its original packaging.
Return procedure for PTFA082201F V1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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