Infineon Technologies PTFA092211ELV4R250XTMA1

Overview

PTFA092211ELV4R250XTMA1 from Infineon is a thermally-enhanced, internally matched LDMOS RF power transistor designed for high-efficiency 920–960 MHz base station amplifier stages in EDGE and WCDMA infrastructure. It delivers 50 W average output power with 18.0 dB linear gain and 30% drain efficiency under two-carrier WCDMA conditions (30 V, 940 MHz, PAR = 6.5 dB), operating at 1.75 A quiescent drain current in a slotted-flange H-33288-2 package.

For engineers reviewing the PTFA092211ELV4R250XTMA1 datasheet, PTFA092211ELV4R250XTMA1 pinout, PTFA092211ELV4R250XTMA1 application, or PTFA092211ELV4R250XTMA1 equivalent, this device is selected for high-linearity, high-power RF final-stage amplification where thermal stability, VSWR ruggedness (10:1 @ 220 W CW), and broadband impedance matching are critical design requirements.

Technical Context

This LDMOS FET operates as a single-ended, Class AB RF power amplifier stage optimized for 3GPP-compliant cellular infrastructure. Its internal broadband matching targets 920–960 MHz without external tuning networks, and its gate biasing supports stable operation across temperature via low HCI drift and normalized V_GS tracking (±3% over –20°C to +100°C case temperature).

The device features integrated ESD protection (HBM Class 2), 65 V V_(BR)DSS, and a junction-to-case thermal resistance of 0.25 °C/W-enabling reliable 220 W CW dissipation at T_CASE = 70 °C. Its R_DS(on) of 0.04 Ω and low gate leakage (<1.0 µA) support efficient DC bias control and minimal standby loss.

Key Specifications

Pinout & Package

Package: H-33288-2 - thermally-enhanced slotted flange metal-ceramic package with isolated source, gold-plated leads, and 0.25 °C/W junction-to-case thermal path. Designed for bolt-down heatsinking and high-power RF PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with PTFA092211FLV4R250XTMA1, the EL variant offers superior mechanical mounting stability for outdoor macrocells; versus MRF6P22190HR5, it provides drop-in 940 MHz performance without external tuning-reducing time-to-market and validation effort.

Availability

PTFA092211ELV4R250XTMA1 is available at Aetrix Electronics and suitable for macrocell base station transmitters, WCDMA dual-carrier amplifiers, and EDGE infrastructure systems requiring stable component supply, long-lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for PTFA092211ELV4R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power transistors for wireless infrastructure.

This part belongs to Infineon's PTFA series of thermally enhanced LDMOS FETs, engineered specifically for 3G/4G macrocell and microcell base station amplifiers demanding high efficiency, linearity, and ruggedness in harsh environmental conditions.

FAQ

What is the recommended gate bias voltage for linear WCDMA operation?

The typical gate-source voltage for two-carrier WCDMA operation is 2.5 V at 1.75 A quiescent drain current. The datasheet specifies a range of 2.0–3.0 V to accommodate process variation and thermal drift. Bias networks must include low-leakage (<1 µA) filtering and ESD protection per HBM Class 2 requirements.

Can PTFA092211ELV4R250XTMA1 operate safely with 10:1 VSWR at full power?

Yes-the device is explicitly rated for indefinite operation into 10:1 VSWR at 30 V DC and 220 W CW output power. This capability is validated per Infineon's internal ruggedness testing and eliminates the need for external circulators or foldback protection circuits in deployed base stations.

Is the H-33288-2 package lead-free and RoHS-compliant?

Yes-PTFA092211ELV4R250XTMA1 uses a Pb-free, RoHS-compliant metallization system and solderable gold-plated leads. The package conforms to JEDEC J-STD-020 moisture sensitivity level (MSL) 3 and supports standard lead-free reflow profiles with peak temperatures up to 260 °C.

How does drain efficiency vary between WCDMA and CW operation?

Drain efficiency is 30% under two-carrier WCDMA (50 W avg), rising to 59% in CW mode at P1dB (250 W). This reflects the higher crest factor and dynamic loading in modulated signals; the 29% absolute increase confirms strong Class AB optimization for both linear and saturated operation.