Infineon Technologies PTFA092211ELV4XWSA1

Overview

PTFA092211ELV4XWSA1 from Infineon is a thermally-enhanced, internally matched LDMOS RF power transistor designed for high-efficiency 920–960 MHz base station amplifier stages in EDGE and WCDMA infrastructure. It delivers 50 W average output power with 18.0 dB linear gain and 30% drain efficiency under two-carrier WCDMA conditions (30 V, 940 MHz, PAR = 7.5 dB), and sustains 220 W PEP in broadband two-tone operation. Its H-33288-2 slotted flange package enables robust thermal management in macrocell PA modules.

For engineers reviewing the PTFA092211ELV4XWSA1 datasheet, PTFA092211ELV4XWSA1 pinout, PTFA092211ELV4XWSA1 application, or PTFA092211ELV4XWSA1 equivalent, key selection criteria include its 65 V V(BR)DSS rating, 0.25 °C/W junction-to-case thermal resistance, 10:1 VSWR ruggedness at 220 W CW, and verified 940 MHz intermodulation performance of –34 dBc (IMD).

Technical Context

This device operates as a single-ended, enhancement-mode N-channel LDMOS FET optimized for Class AB linear amplification in cellular infrastructure transmitters. Its internal broadband matching simplifies external network design across 920–960 MHz while maintaining stable gain flatness (±0.5 dB) and return loss >15 dB at both input and output ports.

The transistor features integrated ESD protection (HBM Class 2), low HCI drift, and gate bias stability over temperature (±3% VGS variation from –20 °C to +100 °C). Its RDS(on) of 0.04 Ω and 200 °C maximum junction temperature support high-reliability continuous-wave and modulated signal operation in outdoor macro base stations.

Key Specifications

Pinout & Package

PTFA092211ELV4XWSA1 uses the H-33288-2 thermally enhanced slotted flange package: copper-tungsten base, gold-plated source and drain terminals, and isolated gate pad. The flange is electrically connected to source, enabling simplified grounding and thermal path integration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA092211ELV4XWSA1, the FL variant offers identical RF performance with mechanical interchangeability limited by flange geometry, while PD57018-E targets fundamentally different power-class applications and cannot substitute in macrocell final-stage roles without system-level redesign.

Availability

PTFA092211ELV4XWSA1 is available at Aetrix Electronics and suitable for macrocell base station PA modules, WCDMA Node B transmitters, EDGE infrastructure amplifiers, and multi-standard BTS frontend designs requiring stable component supply and long-lifecycle support.

Supply support for PTFA092211ELV4XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-voltage and high-frequency discrete devices.

This part belongs to Infineon's RF Power Transistor product line, engineered specifically for cellular infrastructure applications demanding high reliability, ruggedness, and linearity in 700–3800 MHz base station amplifiers.

FAQ

What is the recommended gate bias voltage for PTFA092211ELV4XWSA1 in WCDMA operation?

The datasheet specifies VGS = 2.5 V (typical) at IDQ = 1.75 A and VDD = 30 V. This bias point ensures optimal linearity and efficiency for two-carrier WCDMA signals. A stable, low-noise 2.5 V ±0.1 V supply with series gate resistor (10–47 Ω) is required to suppress oscillation and limit ESD current.

Can PTFA092211ELV4XWSA1 be operated at 28 V instead of 30 V?

Yes - the device supports VDD from 28 V to 32 V per absolute maximum ratings. At 28 V, output power drops ~12% (to ~44 W avg.), gain decreases ~0.3 dB, and efficiency falls ~2.5 percentage points. System-level validation is required to confirm ACLR and spectral mask compliance at reduced voltage.

Is external input/output matching required despite internal broadband matching?

Yes - internal matching provides baseline 50 Ω compatibility but does not replace application-specific tuning. The reference circuit on page 6 shows discrete microstrip matching elements (l1–l13) needed to achieve specified gain flatness, return loss, and IMD performance across 920–960 MHz in production fixtures.

What is the maximum allowable case temperature during continuous operation?

The datasheet defines TCASE = 70 °C as the reference condition for RθJC = 0.25 °C/W and 220 W CW derating. Continuous operation above 70 °C requires linear derating: maximum dissipation drops by 4.0 W/°C. At 90 °C case temperature, max safe CW power is 620 W × (1 − (90−70)×4/700) ≈ 192 W.