Infineon Technologies PTFA092213ELV4R0XTMA1

Overview

PTFA092213ELV4R0XTMA1 from Infineon is a thermally-enhanced, slotted-flange, 220 W LDMOS RF power transistor designed for cellular base station power amplifiers in the 920–960 MHz band. It delivers 50 W average output under two-carrier WCDMA (3GPP), with 17.5 dB linear gain, 29% drain efficiency, –32 dBc IMD, and integrated ESD protection (HBM Class 2).

For engineers reviewing the PTFA092213ELV4R0XTMA1 datasheet, PTFA092213ELV4R0XTMA1 pinout, PTFA092213ELV4R0XTMA1 application, or PTFA092213ELV4R0XTMA1 equivalent, key selection criteria include broadband internal matching, 10:1 VSWR ruggedness at 30 V CW, thermal resistance of 0.23 °C/W, and compatibility with 960 MHz reference circuits using Rogers RO4350 PCB.

Technical Context

This device operates as a single-ended, internally matched RF power amplifier stage optimized for high-linearity cellular infrastructure. Its LDMOS process enables stable DC biasing at V_GS = 2.5 V (typ), I_DQ = 1850 mA, and V_DD = 30 V, supporting both WCDMA and IS-95 CDMA modulation schemes with PAR handling up to 8.5 dB.

The H-33288-6 open-cavity ceramic package integrates source-grounded layout with dedicated drain (C), gate (A), and V_DD (D) terminals, enabling direct heatsink mounting and minimizing parasitic inductance. Thermal design leverages low R_θJC = 0.23 °C/W at 220 W CW and junction temperature rating up to 200 °C.

Key Specifications

Pinout & Package

PTFA092213ELV4R0XTMA1 uses the H-33288-6 thermally-enhanced open-cavity ceramic package with slotted flange, optimized for high-power RF dissipation and mechanical stability on heatsinks. Dimensions: 34.036 × 27.940 mm (1.340 × 1.100 in), with gold-plated leads and ASME Y14.5M-compliant tolerancing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA092213FL and PD57018-E, PTFA092213ELV4R0XTMA1 offers the highest CW output (220 W), lowest thermal resistance (0.23 °C/W), and best ruggedness for 10:1 VSWR events-making it optimal for primary macrocell final-stage deployment where reliability under mismatch is critical.

Availability

PTFA092213ELV4R0XTMA1 is available at Aetrix Electronics and suitable for macrocell base stations, WCDMA Band 8 transmitters, and IS-95 CDMA infrastructure requiring stable component supply and long-term lifecycle support.

Supply support for PTFA092213ELV4R0XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power solutions for telecom infrastructure.

This part belongs to Infineon's PTFA series of thermally-enhanced LDMOS FETs, engineered specifically for high-efficiency, high-linearity cellular base station power amplifiers operating in sub-1 GHz bands.

FAQ

What is the maximum safe operating junction temperature for PTFA092213ELV4R0XTMA1?

The absolute maximum junction temperature (T_J) is 200 °C, as specified in the Absolute Maximum Ratings table. Operation above this limit risks permanent degradation of the LDMOS channel and gate oxide integrity. Thermal design must ensure case temperature remains ≤70 °C at 220 W CW to maintain safe margin under worst-case ambient conditions.

Does PTFA092213ELV4R0XTMA1 require external gate bias sequencing?

No external sequencing is required. The device operates with a fixed DC gate voltage of 2.0–3.0 V (typical 2.5 V) and drain supply of 30 V. Bias is applied simultaneously; no ramp-up timing or interlock logic is needed, simplifying power supply design for macrocell PA modules.

Can PTFA092213ELV4R0XTMA1 be used in Doherty amplifier configurations?

Yes-it is qualified for Doherty operation per Infineon's application note AN375. Its symmetric gain compression and robust VSWR handling enable main and peaking path implementation at 960 MHz, provided the output combiner network accounts for its 50.1 Ω characteristic impedance and thermal derating at peak power.

Is the H-33288-6 package compatible with standard reflow soldering processes?

No-this is a ceramic-metal package with gold-plated leads intended for screw-down or clamp-mount heatsink assembly, not surface-mount reflow. Soldering would damage the internal ceramic substrate and compromise thermal performance; mechanical mounting per datasheet mechanical drawings is mandatory.