Infineon Technologies PTFA142401ELV4R250XTMA1

Overview

PTFA142401ELV4R250XTMA1 from Infineon is a thermally-enhanced, slotted-flange LDMOS power transistor optimized for DVB-T broadcast amplifiers in the 1450–1500 MHz band. It delivers 47.0 dBm average output power, 16.5 dB linear gain, and –32 dBc adjacent channel power ratio at 1475 MHz under DVB-T signal conditions (9.65 dB PAR, 8 MHz BW), operating at 30 V drain supply with 2.0 A quiescent current.

For engineers reviewing the PTFA142401ELV4R250XTMA1 datasheet, PTFA142401ELV4R250XTMA1 pinout, PTFA142401ELV4R250XTMA1 application, or PTFA142401ELV4R250XTMA1 equivalent, key selection criteria include broadband internal matching, 240 W CW P–1dB capability, 0.28 °C/W junction-to-case thermal resistance, 10:1 VSWR ruggedness, and Pb-free RoHS-compliant packaging with <0.25 µm Au plating.

Technical Context

This device is a single-ended, enhancement-mode N-channel LDMOS FET with integrated ESD protection (HBM Class 2), designed for high-efficiency RF power amplification in terrestrial digital TV transmitters. Its internal broadband input/output matching networks cover 1450–1500 MHz without external tuning, and its thermally enhanced H-33288-2 package enables stable operation at junction temperatures up to 200°C.

The transistor exhibits low HCI drift and excellent thermal stability across temperature-gate bias voltage varies only ±3% from –20°C to +100°C case temperature at fixed IDQ. Under two-tone test conditions (1500 MHz, 1 MHz spacing), it achieves 16.0 dB gain and 43% drain efficiency at 240 W PEP output.

Key Specifications

Pinout & Package

PTFA142401ELV4R250XTMA1 is housed in the thermally enhanced H-33288-2 package: a slotted-flange, metal-ceramic RF power package with drain-connected flange, 3-terminal configuration (G, S, D), and gold-plated leads (<0.25 µm). The flange is electrically connected to the drain terminal and must be mounted to a grounded, thermally conductive heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA142401FLV4R250XTMA1, the EL variant offers marginally better thermal performance and is preferred for maximum power density; versus PD85004S, the PTFA142401EL trades bandwidth and tunability for out-of-box DVB-T compliance and simplified layout.

Availability

PTFA142401ELV4R250XTMA1 is available at Aetrix Electronics and suitable for DVB-T broadcast transmitters, DAB digital radio infrastructure, RF test equipment driver stages, and ISM-band signal generator outputs requiring stable component supply and long-lifecycle support.

Supply support for PTFA142401ELV4R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global manufacturing and R&D centers.

The PTFA series belongs to Infineon's RF Power Transistor product line, engineered specifically for high-efficiency, high-reliability broadcast and communications infrastructure amplifiers operating in UHF bands.

FAQ

What is the recommended gate bias voltage and stability requirement for PTFA142401ELV4R250XTMA1?

The typical gate bias voltage is 2.5 V at IDQ = 2.0 A and VDD = 30 V, with allowable range of 2.0–3.0 V. Gate supply must be low-noise (<1 mV RMS) and well-regulated; a dedicated low-dropout regulator with local 10 µF/0.1 µF decoupling is required to prevent oscillation and ensure thermal stability across temperature.

Can PTFA142401ELV4R250XTMA1 be operated in Class AB mode for improved linearity?

Yes - the device is characterized and qualified for Class AB operation with IDQ = 2.0 A. At this bias point, it achieves optimal trade-off between DVB-T linearity (–32 dBc ACPR) and efficiency (27.5%). Lower IDQ settings degrade ACPR; higher IDQ increases dissipation without meaningful linearity gain due to inherent LDMOS compression characteristics.

What is the maximum safe operating area (SOA) limit at 1475 MHz under pulsed conditions?

Under 10 µs pulse width and 10% duty cycle at 1475 MHz, the device supports up to 57 dBm (500 W) peak output power while maintaining VDS ≤ 65 V and junction temperature below 200°C. Pulse testing must use gate current limiting and fast-rise RF drive to avoid secondary breakdown; SOA curves are provided in Figure 12 of the official datasheet Rev. 04.

Is external input/output matching required when using PTFA142401ELV4R250XTMA1 in a DVB-T application?

No - the device incorporates broadband internal matching optimized for 1450–1500 MHz. Application circuits in the datasheet (e.g., Reference Circuit on page 6) show direct 50 Ω interface at both ports. External matching is only needed for narrowband optimization outside this band or for harmonic suppression beyond system specifications.