Infineon Technologies PTFA181001EV4R250XTMA1

Overview

PTFA181001EV4R250XTMA1 from Infineon is a 100 W thermally-enhanced LDMOS RF power transistor designed for DCS-band (1805–1880 MHz) EDGE and WCDMA base station power amplifiers. It delivers 45 W average output power at 1879.8 MHz under 28 V/750 mA bias, with 16.5 dB linear gain, 36% drain efficiency, and 1.8% RMS EVM in 3GPP WCDMA operation.

For engineers reviewing the PTFA181001EV4R250XTMA1 datasheet, PTFA181001EV4R250XTMA1 pinout, PTFA181001EV4R250XTMA1 application, or PTFA181001EV4R250XTMA1 equivalent, key selection criteria include broadband matching (1805–1880 MHz), 10:1 VSWR ruggedness at 100 W CW, integrated Class 2 HBM ESD protection, and thermal resistance of 0.43 °C/W (junction-to-case).

Technical Context

This device operates as a single-ended RF power amplifier stage in macrocell and microcell base station transceivers. Its internal broadband matching enables operation across the full DCS band without external tuning networks, while the slotted-flange H-36248-2 package ensures low thermal resistance (0.43 °C/W) and mechanical stability under high-power RF stress.

The LDMOS process delivers low HCI drift and stable gate threshold voltage over temperature (±3% variation from –20°C to +100°C at IDQ = 750 mA). DC characteristics include 65 V V(BR)DSS, 0.85 Ω RDS(on), and 2.5 V typical VGS at 750 mA quiescent current-enabling robust Class AB biasing with minimal thermal runaway risk.

Key Specifications

Pinout & Package

Package: H-36248-2 - thermally-enhanced slotted flange, single-ended metal-ceramic package with isolated source tab and integrated gate protection diode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PTFA181001FV4R250XTMA1, the slotted-flange variant offers superior mechanical retention and thermal contact repeatability in field-replaceable modules; versus PD57018-E, it provides tighter DCS-band linearity and lower EVM at the expense of multi-band versatility.

Availability

PTFA181001EV4R250XTMA1 is available at Aetrix Electronics and suitable for macrocell base stations, distributed antenna systems, EDGE infrastructure upgrades, and CDMA2000 transmitter modules requiring stable component supply across extended product lifecycles.

Supply support for PTFA181001EV4R250XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power solutions for wireless infrastructure.

This part belongs to Infineon's PTFA LDMOS RF transistor family, engineered specifically for DCS-band base station power amplifiers demanding high efficiency, ruggedness, and long-term stability in unattended outdoor deployments.

FAQ

What is the maximum safe operating drain voltage for PTFA181001EV4R250XTMA1?

The absolute maximum drain-source voltage is 65 V, but continuous operation above 28 V is not recommended. The device is characterized and qualified at 28 V for WCDMA/EDGE applications; exceeding this voltage risks accelerated hot-carrier degradation and reduced MTTF, especially above 32 V.

Does PTFA181001EV4R250XTMA1 require external gate protection beyond the integrated ESD diode?

Yes-while the integrated Class 2 HBM diode protects against handling ESD, a series gate resistor (5–10 Ω) and parallel 100 pF capacitor to ground are required per Infineon's reference design to suppress VHF/UHF oscillations and prevent gate ringing during fast transient events in deployed systems.

Can PTFA181001EV4R250XTMA1 be used in pulsed radar applications?

No-it is not characterized or qualified for pulsed RF operation. The device's thermal time constant and gate charge behavior are optimized for continuous-wave and modulated telecom signals (WCDMA, EDGE, CDMA2000); pulsed duty cycles introduce unvalidated junction temperature cycling and potential gate oxide stress.

What is the recommended minimum heatsink thermal resistance for 100 W CW operation?

For 100 W CW at TCASE = 70°C, the junction temperature must remain ≤200°C. With RθJC = 0.43 °C/W, the heatsink-to-ambient resistance (RθSA) must be ≤0.87 °C/W to limit ΔTJA to 130°C, assuming 25°C ambient and 1.5 W conduction loss in mounting hardware.