My Inquiry
My Account
Infineon Technologies PTFA181001E V4 T500
- Part No.:
- PTFA181001E V4 T500
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- 2-Flatpack, Fin Leads
- Datasheet:
-
PTFA181001E V4 T500.pdf
- Description:
- RF MOSFET LDMOS 28V H-36248-2
- Quantity:
- Payment:
- Shipping:
Inventory:7,616
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PTFA181001E V4 T500 from Infineon is a thermally-enhanced 100 W LDMOS RF power transistor designed for DCS-band (1805–1880 MHz) EDGE and WCDMA base station power amplifiers. It delivers 45 W average output power at 1879.8 MHz under 3GPP WCDMA signal conditions, with 16.5 dB linear gain, 36% drain efficiency, and 1.8% RMS EVM at 28 V supply and 750 mA quiescent current.
For engineers reviewing the PTFA181001E V4 T500 datasheet, PTFA181001E V4 T500 pinout, PTFA181001E V4 T500 application, or PTFA181001E V4 T500 equivalent, key selection criteria include broadband matching (1805–1880 MHz), 10:1 VSWR ruggedness at 100 W CW, thermal resistance of 0.43 °C/W (junction-to-case), and integrated Class 2 HBM ESD protection.
Technical Context
This device operates as a single-ended RF power amplifier stage in macrocell and microcell base station transceivers. Its internal broadband matching network enables operation across the full DCS band without external tuning, while the slotted-flange H-36248-2 package ensures low thermal resistance (0.43 °C/W) and mechanical stability under high-power RF stress.
The LDMOS process delivers low HCI drift and excellent thermal stability-gate bias voltage varies only ±3% over –20°C to +100°C case temperature. It sustains 10:1 VSWR at 28 V and 100 W CW output, making it suitable for deployed infrastructure where load mismatch resilience is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–1880 MHz: Full DCS band coverage with matched performance across all channels. |
| Avg. Output Power (WCDMA) | 45 W at 1879.8 MHz, 3GPP signal, 8 dB P/A ratio: Sufficient for two-carrier WCDMA macrocell PA stages. |
| Linear Gain | 16.5 dB typical: Enables compact driver/PA cascade architecture with minimal interstage loss sensitivity. |
| Drain Efficiency | 36% at 45 W avg. output: Reduces heat sink size and cooling requirements in densely packed RF modules. |
| EVM RMS | 1.8% at 46.5 dBm: Meets stringent 3GPP linearity requirements for adjacent channel interference control. |
| VSWR Tolerance | 10:1 at 28 V, 100 W CW: Ensures operational safety during antenna detuning or cable fault events. |
| Thermal Resistance RθJC | 0.43 °C/W: Allows direct mounting to heatsink with predictable junction temperature rise under full load. |
Pinout & Package
Package: H-36248-2 - thermally-enhanced slotted flange, single-ended metal-ceramic package with isolated source tab and integrated ESD protection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Flange) | RF Power Output / Heat Sink Interface | Electrically connected to case; must be DC-grounded and thermally coupled to heatsink. |
| Source (Tab) | RF Ground Reference / Current Return Path | Isolated metal tab; requires low-inductance connection to system ground plane for stability. |
| Gate (Lead) | RF Input Control Terminal | High-impedance input requiring stable DC bias (2.5 V typ.) and RF decoupling via series resistor and capacitor. |
Key Features
| Feature | Design Value |
|---|---|
| Broadband internal matching | Eliminates external matching networks across 1805–1880 MHz, reducing PCB area and assembly cost. |
| 10:1 VSWR ruggedness | Withstands severe load mismatches without degradation or failure-critical for outdoor base station reliability. |
| Thermally-enhanced slotted flange | 0.43 °C/W RθJC enables >100 W CW operation with standard heatsink solutions in ambient ≤70°C. |
| Class 2 HBM ESD protection | Withstands ≥2 kV human-body-model discharge-reduces handling-related field failures during assembly. |
| Low HCI drift & bias stability | ±3% gate voltage variation over –20°C to +100°C case temperature ensures consistent PA performance across climate zones. |
Applications
| Macrocell Base Station PA | Microcell Distributed Antenna System |
|---|---|
Use Scenario: High-power final-stage amplifier in outdoor macrocell BTS operating in DCS band with dual-carrier WCDMA signals. IC Role / Device Role / Timing Role: RF power transistor delivering 45 W average output with <1.8% EVM and –61 dBc ACPR at 400 kHz offset. Use Value: Enables single-device PA design meeting 3GPP spectral mask and linearity specs without complex predistortion calibration. | Use Scenario: Compact, air-cooled PA module in indoor/outdoor microcell nodes serving dense urban environments. IC Role / Device Role / Timing Role: Final-stage LDMOS FET providing 45 W avg. output with 36% efficiency and 16.5 dB gain at 1879.8 MHz. Use Value: Reduces thermal management complexity via 0.43 °C/W RθJC-enables fanless operation in space-constrained enclosures. |
| EDGE Infrastructure Transmitter | Multi-Carrier CDMA2000 Baseband PA |
Use Scenario: Linear PA stage in legacy EDGE-compliant base stations requiring high spectral purity and modulation accuracy. IC Role / Device Role / Timing Role: High-efficiency RF switch-mode amplifier delivering 45 W with 1.8% RMS EVM and –73 dBc ACPR at 600 kHz offset. Use Value: Achieves required modulation fidelity without external linearization, lowering BOM count and power supply ripple sensitivity. | Use Scenario: Three-carrier CDMA2000 forward link PA in small-cell repeater systems with tight adjacent-channel leakage limits. IC Role / Device Role / Timing Role: Broadband LDMOS FET delivering 45 W avg. output with –45 dBc ACP at low-band edge (1880 MHz). Use Value: Maintains >37% drain efficiency across multi-tone CDMA2000 signals-minimizes thermal derating in stacked RF modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PTFA181001F V4 | Same die, earless flange (H-37248-2); RθJC = 0.45 °C/W vs. 0.43 °C/W; identical RF specs. | Preferred where mechanical clearance prohibits slotted flange mounting; slightly higher thermal resistance. | Select PTFA181001F when board layout requires non-slotted heatsink interface or lower mounting torque. |
| PD57018-E | 1800 MHz LDMOS, 100 W PEP, but rated for 28 V only up to 1850 MHz; no published 1879.8 MHz WCDMA EVM data. | Limited to narrowband DCS applications; lacks verified 3GPP-compliant linearity at upper band edge. | Use PD57018-E only in fixed-frequency, non-WCDMA deployments where upper-band edge performance is not required. |
Compared with PTFA181001F V4, the PTFA181001E V4 T500 offers marginally better thermal resistance (0.43 vs. 0.45 °C/W) and slotted-flange mechanical retention-critical for high-vibration macrocell sites. Versus PD57018-E, it provides validated 1879.8 MHz WCDMA linearity and full-band DCS ruggedness.
Availability
PTFA181001E V4 T500 is available at Aetrix Electronics and suitable for macrocell base station PA, microcell distributed antenna systems, EDGE infrastructure transmitters, and multi-carrier CDMA2000 baseband PA applications requiring stable component supply and long-term lifecycle support.
Supply support for PTFA181001E V4 T500 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power transistors for wireless infrastructure.
The PTFA series belongs to Infineon's thermally optimized LDMOS RF power transistor product line, engineered specifically for DCS/PCS-band macro- and microcell base station power amplifiers demanding high efficiency, ruggedness, and broadband linearity.
FAQ
What is the maximum continuous drain current rating for PTFA181001E V4 T500?
The device does not specify a maximum continuous drain current rating. Instead, its safe operating area is defined by maximum junction temperature (200°C), total device dissipation (407 W at TCASE = 25°C), and thermal resistance (0.43 °C/W). At 28 V and 100 W CW output, typical IDQ is 750 mA, with peak pulsed current limited by SOA curves in the datasheet.
Does PTFA181001E V4 T500 require external gate bias circuitry?
Yes-it requires an external DC bias network to set VGS ≈ 2.5 V at IDQ = 750 mA. The reference circuit uses a potentiometer (R4), emitter-follower transistor (Q1), and decoupling capacitors to stabilize gate voltage against temperature drift and supply ripple.
Can PTFA181001E V4 T500 operate at 26 V or 32 V supply rails?
No-absolute maximum VDSS is 65 V, but the device is characterized and qualified only at 28 V. Operation at 26 V reduces output power and efficiency; 32 V exceeds recommended operating conditions and risks accelerated degradation per Infineon's reliability guidelines.
Is the H-36248-2 package RoHS compliant and lead-free?
Yes-the PTFA181001E V4 T500 is explicitly stated as Pb-free and RoHS compliant in the datasheet, with lead-free plating on all external terminals and flange surfaces, meeting EU Directive 2011/65/EU requirements.
PTFA181001E V4 T500 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 2-Flatpack, Fin Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.805GHz ~ 1.88GHz
- Gain:
- 16.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 750 mA
- Power - Output:
- 45W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H-36248-2
PTFA181001E V4 T500 FAQ
1.How can I place an order for PTFA181001E V4 T500 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTFA181001E V4 T500 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTFA181001E V4 T500 reliable?
The price and inventory of PTFA181001E V4 T500 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTFA181001E V4 T500 is usually 5 days.
3.What payment methods are accepted for PTFA181001E V4 T500?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTFA181001E V4 T500 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTFA181001E V4 T500?
PTFA181001E V4 T500 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTFA181001E V4 T500 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTFA181001E V4 T500?
For technical support, including PTFA181001E V4 T500 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTFA181001E V4 T500 requirements.
6.How does Aetrix verify that PTFA181001E V4 T500 is sourced from the original manufacturer or authorized distributors?
All PTFA181001E V4 T500 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTFA181001E V4 T500 meets industry standards.
7.What is the process for return or replacement of PTFA181001E V4 T500?
All PTFA181001E V4 T500 units undergo pre-shipment inspection (PSI). If there is an issue with PTFA181001E V4 T500, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTFA181001E V4 T500 part is unused and in its original packaging.
Return procedure for PTFA181001E V4 T500:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PTFA181001E V4 T500 Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
-
CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP USA Inc.
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
