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Infineon Technologies PTFA181001EV4XWSA1
- Part No.:
- PTFA181001EV4XWSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- 2-Flatpack, Fin Leads
- Datasheet:
-
PTFA181001EV4XWSA1.pdf
- Description:
- RF MOSFET LDMOS 28V H-36248-2
- Quantity:
- Payment:
- Shipping:
Inventory:4,476
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Product details
Overview
PTFA181001EV4XWSA1 from Infineon is a 100 W thermally-enhanced LDMOS RF power transistor designed for DCS-band (1805–1880 MHz) EDGE and WCDMA base station power amplifiers. It delivers 45 W average output power at 1879.8 MHz under 3GPP WCDMA signal conditions, with 16.5 dB linear gain, 36% drain efficiency, and 1.8% RMS EVM at 28 V supply and 750 mA quiescent current.
For engineers reviewing the PTFA181001EV4XWSA1 datasheet, PTFA181001EV4XWSA1 pinout, PTFA181001EV4XWSA1 application, or PTFA181001EV4XWSA1 equivalent, key selection criteria include broadband matching (1805–1880 MHz), 10:1 VSWR ruggedness at 100 W CW, integrated Class 2 HBM ESD protection, and thermal resistance of 0.43 °C/W (junction-to-case).
Technical Context
This device operates as a single-ended RF power amplifier stage in macrocell and microcell base station transceivers. Its internal broadband matching network enables operation across the full DCS band without external tuning, while the slotted flange package (H-36248-2) ensures low thermal resistance and mechanical stability under high-power RF stress.
The LDMOS process delivers robust gate oxide integrity and low hot-carrier injection drift, supporting stable performance over temperature (–40 to +150 °C storage, 200 °C max junction). DC biasing requires precise VGS control (2.0–3.0 V typical at ID = 750 mA) due to strong gate threshold sensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–1880 MHz - fully matched for DCS band operation without external tuning |
| Avg. Output Power (WCDMA) | 45 W - supports two-carrier WCDMA at 8 dB P/A ratio and 10 MHz spacing |
| Linear Gain | 16.5 dB - enables single-stage PA design with sufficient margin before driver saturation |
| Drain Efficiency | 36% - reduces thermal load and power supply demand in continuous-envelope modulation |
| EVM RMS | 1.8% - meets 3GPP TS 25.104 linearity requirements for WCDMA base stations |
| VSWR Tolerance | 10:1 @ 28 V, 100 W CW - protects against antenna mismatch-induced failure in deployed systems |
| RθJC | 0.43 °C/W - allows sustained 100 W operation with case temperature ≤ 70 °C |
Pinout & Package
PTFA181001EV4XWSA1 uses the H-36248-2 thermally-enhanced slotted flange package: ceramic/metal hybrid construction with solderable flange, 3-pin TO-270 variant, optimized for RF grounding and heat dissipation via mounting screw holes aligned to flange slots.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | RF power output node | Connected to output matching network; requires low-inductance path to ground plane for harmonic suppression |
| Source (S) | RF and DC return path | Internally bonded to flange; must be soldered directly to PCB ground plane for thermal and RF performance |
| Gate (G) | RF input control terminal | DC-biased via resistive divider; requires stable 2.5 V ±0.5 V at 750 mA IDQ for optimal linearity |
Key Features
| Feature | Design Value |
|---|---|
| Broadband internal matching | Eliminates need for external impedance transformers across 1805–1880 MHz, reducing BOM count and layout sensitivity |
| Thermally-enhanced slotted flange | Enables direct thermal coupling to heatsink with <0.5 °C/W total thermal resistance in production assemblies |
| Integrated Class 2 HBM ESD protection | Withstands ≥2 kV human-body-model discharge without gate oxide damage during handling and assembly |
| 10:1 VSWR ruggedness | Operates safely under worst-case antenna mismatch without derating or protection circuitry |
| Pb-free and RoHS compliant | Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles up to 260 °C peak |
Applications
| Macrocell Base Station PA | Microcell Distributed Antenna System |
|---|---|
|
Use Scenario: High-power final-stage amplifier in outdoor macrocell BTS operating in DCS-1800 band with dual-carrier WCDMA traffic. IC Role / Device Role / Timing Role: RF power transistor delivering 45 W avg. output with 16.5 dB gain and 36% efficiency at 1879.8 MHz. Use Value: Enables compact, air-cooled PA design meeting 3GPP spectral mask and EVM requirements without external predistortion hardware. |
Use Scenario: Remote radio head (RRH) amplifier in indoor/outdoor distributed antenna systems requiring high linearity and thermal stability. IC Role / Device Role / Timing Role: Final-stage LDMOS FET biased at 750 mA for consistent gain flatness across 1805–1880 MHz. Use Value: Delivers 1.8% RMS EVM and –61 dBc ACPR at 400 kHz offset, enabling clean multi-user signal coexistence. |
| EDGE Base Transceiver Station | Multi-Standard Cellular Infrastructure |
|
Use Scenario: Linear PA stage in legacy EDGE infrastructure upgrades where backward compatibility with GMSK modulation is required. IC Role / Device Role / Timing Role: Single-ended RF power amplifier delivering 45 W at 1879.8 MHz with 16.5 dB gain and 36% efficiency. Use Value: Achieves <–30 dBc IMD3 and <1.8% EVM, satisfying GSM/EDGE TR 101 275 linearity mandates. |
Use Scenario: Shared PA platform supporting simultaneous WCDMA, EDGE, and CDMA2000 operation in multi-mode base stations. IC Role / Device Role / Timing Role: Broadband LDMOS transistor with matched ZIN/ZOUT across 1805–1880 MHz for multi-standard signal fidelity. Use Value: Maintains >35% efficiency and <–40 dBc ACPR across IS-95, CDMA2000, and WCDMA waveforms without retuning. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PTFA181001FV4XWSA1 | Same die, earless flange (H-37248-2); RθJC = 0.45 °C/W vs. 0.43 °C/W; identical RF specs | Preferred for automated SMT assembly where flange slot clearance is constrained | Select when board-level thermal interface favors uniform flange contact over slotted mechanical retention |
| MRF6P21190HR5 | NXP LDMOS; 190 W P1dB, 1805–2170 MHz; higher P1dB but lower gain (15.5 dB) and efficiency (34%) at 1880 MHz | Suitable for wider-band multi-band PA designs requiring extended frequency coverage | Choose only if system requires >100 W peak power or operation beyond DCS band into PCS/UMTS bands |
Compared with PTFA181001FV4XWSA1, the slotted-flange EV4XWSA1 offers marginally better thermal resistance for air-cooled macrocell deployments; versus MRF6P21190HR5, it trades bandwidth and peak power for superior DCS-band linearity and efficiency in dedicated infrastructure applications.
Availability
PTFA181001EV4XWSA1 is available at Aetrix Electronics and suitable for macrocell base stations, distributed antenna systems, EDGE infrastructure upgrades, and multi-standard cellular transceivers requiring stable component supply and long-term lifecycle support.
Supply support for PTFA181001EV4XWSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF power devices for wireless infrastructure.
This part belongs to Infineon's PTFA series of thermally-optimized LDMOS transistors, engineered specifically for DCS/PCS-band base station power amplifiers demanding high efficiency, ruggedness, and linearity under real-world modulation.
FAQ
What is the maximum safe operating drain voltage for PTFA181001EV4XWSA1?
The absolute maximum drain-source voltage (VDSS) is 65 V, but the device is characterized and qualified for continuous operation at 28 V DC supply. Operating above 28 V requires rigorous derating of output power and thermal monitoring to avoid exceeding the 200 °C junction temperature limit or triggering thermal runaway.
Does PTFA181001EV4XWSA1 require external gate protection diodes?
No-this device integrates Class 2 HBM ESD protection (≥2 kV) on the gate terminal, eliminating the need for external gate protection diodes in standard handling and PCB assembly. However, transient voltage suppressors remain recommended in high-noise RF environments with long gate trace runs.
Can PTFA181001EV4XWSA1 be used in pulsed-RF applications such as radar?
No-it is not characterized or rated for pulsed-RF operation. The datasheet specifies performance only for continuous-wave and modulated signals (WCDMA, EDGE, CDMA2000). Pulse duty cycle, rise/fall time, and peak power parameters are undefined; use only in telecom infrastructure applications per its qualification scope.
What is the recommended gate bias network for stable WCDMA operation?
A precision resistive divider (e.g., 1.2 kΩ + 1.3 kΩ) with bypass capacitors (0.001 µF and 1 µF) is specified in the reference circuit. This provides stable 2.5 V gate bias at 750 mA IDQ, minimizing gain drift over temperature and ensuring <1.8% EVM under 3GPP-compliant signal conditions.
PTFA181001EV4XWSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 2-Flatpack, Fin Leads
- Packaging:
- Tray
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.88GHz
- Gain:
- 16.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 1µA
- Noise Figure:
- -
- Current - Test:
- 750 mA
- Power - Output:
- 100W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H-36248-2
PTFA181001EV4XWSA1 FAQ
1.How can I place an order for PTFA181001EV4XWSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for PTFA181001EV4XWSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PTFA181001EV4XWSA1 reliable?
The price and inventory of PTFA181001EV4XWSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PTFA181001EV4XWSA1 is usually 5 days.
3.What payment methods are accepted for PTFA181001EV4XWSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PTFA181001EV4XWSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PTFA181001EV4XWSA1?
PTFA181001EV4XWSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PTFA181001EV4XWSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PTFA181001EV4XWSA1?
For technical support, including PTFA181001EV4XWSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PTFA181001EV4XWSA1 requirements.
6.How does Aetrix verify that PTFA181001EV4XWSA1 is sourced from the original manufacturer or authorized distributors?
All PTFA181001EV4XWSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PTFA181001EV4XWSA1 meets industry standards.
7.What is the process for return or replacement of PTFA181001EV4XWSA1?
All PTFA181001EV4XWSA1 units undergo pre-shipment inspection (PSI). If there is an issue with PTFA181001EV4XWSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PTFA181001EV4XWSA1 part is unused and in its original packaging.
Return procedure for PTFA181001EV4XWSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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